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February 2013

FSFR2100 • Rev.1.1.0

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

FSFR2100 — Fairchild Power Switch (FPS™)

for Half-Bridge Resonant Converters

Features

 Variable Frequency Control with 50% Duty Cycle

for Half-bridge Resonant Converter Topology

 High Efficiency through Zero Voltage Switching (ZVS)

 Internal SuperFET™s with Fast-Recovery Type

Body Diode (trr=120 ns)

 Fixed Dead Time (350 ns) Optimized for MOSFETs

 Up to 300kHz Operating Frequency

 Pulse Skipping for Frequency Limit (Programmable)

at Light-Load Condition

 Remote On/Off Control Using Control Pin

 Protection Functions: Over-Voltage Protection

(OVP), Over-Load Protection (OLP), Over-Current

Protection (OCP), Abnormal Over-Current Protection

(AOCP), Internal Thermal Shutdown (TSD)

Applications

 PDP and LCD TVs

 Desktop PCs and Servers

 Adapters

 Telecom Power Supplies

 Audio Power Supplies

Description

The FSFR2100 is a highly integrated power switch

designed for high-efficiency half-bridge resonant

converters. Offering everything necessary to build a

reliable and robust resonant converter, the FSFR2100

simplifies designs and improves productivity, while

improving performance. The FSFR2100 combines power

MOSFETs with fast-recovery type body diodes, a high-

side gate-drive circuit, an accurate current controlled

oscillator, frequency limit circuit, soft-start, and built-in

protection functions. The high-side gate-drive circuit has

a common-mode noise cancellation capability, which

guarantees stable operation with excellent noise

immunity. The fast-recovery body diode of the MOSFETs

improves reliability against abnormal operation

conditions, while minimizing the effect of the reverse

recovery. Using the zero-voltage-switching (ZVS)

technique dramatically reduces the switching losses and

efficiency is significantly improved. The ZVS also

reduces the switching noise noticeably, which allows a

small-sized Electromagnetic Interference (EMI) filter.

The FSFR2100 can be applied to various resonant

converter topologies, such as: series resonant, parallel

resonant, and LLC resonant converters.

Related Resources

 AN-4151 — Half-Bridge LLC Resonant Converter

Design Using FSFR2100 Fairchild Power Switch

(FPS™)

 Evaluation Board: FEBFSF R2100_D015v1

Ordering Information

Part

Number Package

Operating

Junction

Temperature

RDS(ON_MAX)

Maximum Output Power

without Heatsink

(VIN=350~400 V)(1,2)

Maximum Output

Power with Heatsink

(VIN=350~400 V)(1,2)

FSFR2100 9-SIP -40 to +130°C 0.38  200 W 450 W

Notes:

1. The junction temperature can limit the maximum output power.

2. Maximum practical continuous power in an open-frame design at 50C ambient.

FSFR2100 • Rev.1.1.0 2

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Application Circuit Diagram

Figure 1. Typical Application Circuit (LLC Resonant Half-Bridge Converter)

Block Diagram

1.5



Figure 2. Internal Block Diagram

FSFR2100 • Rev.1.1.0 3

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Pin Configuration

Figure 3. Package Diagram

Pin Definitions

Pin # Name Description

1 VDL This is the drain of the high-side MOSFET, typically connected to the input DC link voltage.

2 CON

This pin is for enable/disable and protection. When the voltage of this pin is above 0.6 V, the

IC operation is enabled. When the voltage of this pin drops below 0.4 V, gate drive signals

for both MOSFETs are disabled. When the voltage of this pin increases above 5 V,

protection is triggered.

3 RT This pin programs the switching frequency. Typically, an opto-coupler is connected to control

the switching frequency for the output voltage regulation.

4 CS

This pin senses the current flowing through the low-side MOSFET. Typically, negative

voltage is applied on this pin.

5 SG This pin is the control ground.

6 PG This pin is the power ground. This pin is connected to the source of the low-side MOSFET.

7 LVCC This pin is the supply voltage of the control IC.

8 NC No connection.

9 HVCC This is the supply voltage of the high-side gate-drive circuit IC.

10 VCTR This is the drain of the low-side MOSFET. Typically, a transformer is connected to this pin.

FSFR2100 • Rev.1.1.0 4

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In

addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. TA=25C unless otherwise specified.

Symbol Parameter Min. Max. Unit

VDS Maximum Drain-to-Source Voltage (VDL-VCTR and VCTR-PG) 600 V

LVCC Low-Side Supply Voltage -0.3 25.0 V

HVCC to VCTR High-Side VCC Pin to Low-side Drain Voltage -0.3 25.0 V

HVCC High-Side Floating Supply Voltage -0.3 625.0 V

VCON Control Pin Input Voltage -0.3 LVCC V

VCS Current Sense (CS) Pin Input Voltage -5.0 1.0 V

VRT R

T Pin Input Voltage -0.3 5.0 V

dVCTR/dt Allowable Low-Side MOSFET Drain Voltage Slew Rate 50 V/ns

PD Total Power Dissipation(3) 12 W

TJ Maximum Junction Temperature(4) +150

C

Recommended Operating Junction Temperature(4) -40 +130

TSTG Storage Temperature Range -55 +150 C

MOSFET Section

VDGR Drain Gate Voltage (RGS=1 M) 600 V

VGS Gate Source (GND) Voltage ±30 V

IDM Drain Current Pulsed(5) 33 A

ID Continuous Drain Current TC=25C 11

TC=100C 7

Package Section

Torque Recommended Screw Torque 5~7 kgf·cm

Notes:

3. Per MOSFET when both MOSFETs are conducting.

4. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.

5. Pulse width is limited by maximum junction temperature.

Thermal Impedance

TA=25C unless otherwise specified.

Symbol Parameter Value Unit

θJC Junction-to-Case Center Thermal Impedance (Both MOSFETs Conducting) 10.44 ºC/W

θJA Junction-to-Ambient Thermal Impedance 80 ºC/W

FSFR2100 • Rev.1.1.0 5

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Electrical Characteristics

TA=25C unless otherwise specified.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

MOSFET Section

BVDSS Drain-to-Source Breakdown Voltage

ID=200 μA, TA=25C 600

ID=200 μA, TA=125C 650

RDS(ON) On-State Resistance VGS=10 V, ID=5.5 A 0.32 0.38 

trr Body Diode Reverse Recovery Time(6) V

GS=0 V, IDiode=11.0 A 120 ns

CISS Input Capacitance(6) VDS=25V, VGS=0 V,

f=1.0 MHz

1148 pF

COSS Output Capacitance(6) 671 pF

Supply Section

ILK Offset Supply Leakage Current H-VCC=VCTR=600 V/500 V 50 μA

IQHVCC Quiescent HVCC Supply Current (HVCCUV+) - 0.1 V 50 120 μA

IQLVCC Quiescent LVCC Supply Current (LVCCUV+) - 0.1 V 100 200 μA

IOHVCC Operating HVCC Supply Current

(RMS Value)

fOSC=100 KHz, VCON > 0.6 V 6 9 mA

No Switching, VCON < 0.4 V 100 200 μA

IOLVCC Operating LVCC Supply Current

(RMS Value)

fOSC=100KHz, VCON > 0.6 V 7 11 mA

No Switching, VCON < 0.4 V 2 4 mA

UVLO Section

LVCCUV+ LVCC Supply Under-Voltage Positive-Going Threshold (LVCC Start) 13.0 14.5 16.0 V

LVCCUV- LVCC Supply Under-Voltage Negative-Going Threshold (LVCC Stop) 10.2 11.3 12.4 V

LVCCUVH LVCC Supply Under-Voltage Hysteresis 3.2 V

HVCCUV+ HVCC Supply Under-Voltage Positive-Going Threshold (HVCC Start) 8.2 9.2 10.2 V

HVCCUV- HVCC Supply Under-Voltage Negative-Going Threshold (HVCC Stop) 7.8 8.7 9.6 V

HVCCUVH HVCC Supply Under-Voltage Hysteresis 0.5 V

Oscillator & Feedback Section

VCONDIS Control Pin Disable Threshold Voltage 0.36 0.40 0.44 V

VCONEN Control Pin Enable Threshold Voltage 0.54 0.60 0.66 V

VRT V-I Converter Threshold Voltage

RT=5.2 K

1.5 2.0 2.5 V

fOSC Output Oscillation Frequency 94 100 106 KHz

DC Output Duty Cycle 48 50 52 %

fSS Internal Soft-Start Initial Frequency fSS=fOSC+40 kHz, RT=5.2 K 140 KHz

tSS Internal Soft-Start Time 2 3 4 ms

Continued on the following page…

FSFR2100 • Rev.1.1.0 6

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Electrical Characteristics (Continued)

TA=25C unless otherwise specified.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Protection Section

IOLP OLP Delay Current VCON=4 V 3.6 4.8 6.0 μA

VOLP OLP Protection Voltage VCON > 3.5 V 4.5 5.0 5.5 V

VOVP LVCC Over-Voltage Protection L-VCC > 21 V 21 23 25 V

VAOCP AOCP Threshold Voltage V/t=-0.1 V/µs -1.0 -0.9 -0.8 V

tBAO AOCP Blanking Time(6) VCS < VAOCP; V/t=-0.1 V/µs 50 ns

VOCP OCP Threshold Voltage V/t=-1 V/µs -0.64 -0.58 -0.52 V

tBO OCP Blanking Time(6) VCS < VOCP; V/t=-1 V/µs 1.0 1.5 2.0 μs

tDA Delay Time (Low Side) Detecting from

VAOCP to Switch Off(6) V/t=-1 V/µs 250 400 ns

TSD Thermal Shutdown Temperature(6) 110 130 150

C

ISU Protection Latch Sustain LVCC Supply

Current LVCC=7.5 V 100 150 μA

VPRSET Protection Latch Reset LVCC Supply

Voltage 5 V

Dead-Time Control Section

DT Dead Time(7) 350 ns

Notes:

6. This parameter, although guaranteed, is not tested in production.

7. These parameters, although guaranteed, are tested only in EDS (wafer test) process.

FSFR2100 • Rev.1.1.0 7

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Typical Performance Characteristics

These characteristic graphs are normalized at TA=25°C.

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

Temp (

0.9

0.95

1.05

1.1

-50-250 255075100

Normalized at 25

Figure 4. Low-Side MOSFET Duty Cycle

vs. Temperature

Figure 5. Switching Frequency vs. Temperature

0.9

0.95

1.05

1.1

-50-250 255075100

Temp (

Normalized at 25

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

Figure 6. High-Side VCC (H

CC) Start

vs. Temperature

Figure 7. High-Side VCC (H

CC) Stop

vs. Temperature

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

Figure 8. Low-Side VCC (L

CC) Start

vs. Temperature

Figure 9. Low-Side

CC (L

CC) Stop

vs. Temperature

FSFR2100 • Rev.1.1.0 8

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Typical Performance Characteristics (Continued)

These characteristic graphs are normalized at TA=25°C.

0.9

0.95

1.05

1.1

-50-250 255075100

Temp (

Normalized at 25

0.9

0.95

1.05

1.1

-50-250 255075100

Temp (

Normalized at 25

Figure 10. OLP Delay Current

vs. Temperature

Figure 11. OLP Protection Voltage

vs. Temperature

0.9

0.95

1.05

1.1

-50-250 255075100

Temp (

Normalized at 25

0.9

0.95

1.05

1.1

-50-250 255075100

Temp (

Normalized at 25

Figure 12. L

CC OVP Voltage vs. Temperature Figure 13. RT

oltage vs. Temperature

0.9

0.95

1.05

1.1

-50-250 255075100

Temp (

Normalized at 25

0.9

0.95

1.05

1.1

-50-250 255075100

Temp (

Normalized at 25

Figure 14. CON Pin Enable Voltage

vs. Temperature

Figure 15. OCP Voltage vs. Temperature

FSFR2100 • Rev.1.1.0 9

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Functional Description

1. Basic Operation

FSFR2100 is designed to drive high-side and low-side

MOSFETs complementarily with 50% duty cycle. A fixed

dead time of 350 ns is introduced between consecutive

transitions, as shown in Figure 16.

Figure 16. MOSFETs Gate Drive Signal

2. Internal Oscillator

FSFR2100 employs a current-controlled oscillator, as

shown in Figure 17. Internally, the voltage of RT pin is

regulated at 2 V and the charging/discharging current for

the oscillator capacitor, CT, is obtained by copying the

current flowing out of RT pin (ICTC) using a current mirror.

Therefore, the switching frequency increases as ICTC

increases.

Figure 17. Current Controlled Oscillator

3. Frequency Setting

Figure 18 shows a typical voltage gain curve of a

resonant converter, where the gain is inversely

proportional to the switching frequency in the ZVS region.

The output voltage can be regulated by modulating the

switching frequency. Figure 19 shows the typical circuit

configuration for RT pin, where the opto-coupler transistor

is connected to the RT pin to modulate the switching

frequency.

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Gain

140 150

60 70 80 90 100 110 120 130

freq (kHz)

f min f normal f max f ISS

Soft-start

Figure 18. Resonant Converter Typical Gain Curve

Figure 19. Frequency Control Circuit

The minimum switching frequency is determined as:

min

5.2 100( )

kHz



 (1)

Assuming the saturation voltage of opto-coupler

transistor is 0.2 V, the maximum switching frequency is

determined as:

max

min max

5.2 4.68

()100()

kHz



  (2)

To prevent excessive inrush current and overshoot of

output voltage during startup, increase the voltage gain

of the resonant converter progressively. Since the

voltage gain of the resonant converter is inversely

proportional to the switching frequency, the soft-start is

implemented by sweeping down the switching frequency

from an initial high frequency (fISS) until the output

voltage is established. The soft-start circuit is made by

connecting R-C series network on the RT pin, as shown

in Figure 19. FSFR2100 also has an internal soft-start for

Control

VDL

LVCC

CON

SG PG

Rmi

Rmax

Css

Rss

FSFR2100 • Rev.1.1.0 10

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

3 ms to reduce the current overshoot during the initial

cycles, which adds 40 kHz to the initial frequency of the

external soft-start circuit, as shown in Figure 20. The

initial frequency of the soft-start is given as:

min

5.2 5.2

()10040()

ISS

kHz



 (3)

It is typical to set the initial frequency of soft-start two ~

three times the resonant frequency (fO) of the resonant

network.

The soft-start time is three to four times of the RC time

constant. The RC time constant is as follows:

SS SS SS

TRC (4)

time

Control loop

take over

40kHz

ISS

Figure 20. Frequency Sweeping of Soft-start

4. Control Pin

The FSFR2100 has a control pin for protection, cycle

skipping, and remote on/off. Figure 21 shows the internal

block diagram for control pin.

Figure 21. Internal Block of Control Pin

Protection: When the control pin voltage exceeds 5V,

protection is triggered. Detailed applications are

described in the protection section.

Pulse Skipping: FSFR2100 stops switching when the

control pin voltage drops below 0.4 V and resumes

switching when the control pin voltage rises above 0.6 V.

To use pulse-skipping, the control pin should be

connected to the opto-coupler collector pin. The

frequency that causes pulse skipping is given as:

(5)

Figure 22. Control Pin Configuration for Pulse

Skipping

Remote On / Off: When an auxiliary power supply is

used for standby, the main power stage using FSFR2100

can be shut down by pulling down the control pin voltage,

as shown in Figure 23. R1 and C1 are used to ensure

soft-start when switching resumes.

Figure 23. Remote On / Off Circuit



kHz100x

Rk16.4

Rk2.5

maxmin

SKIP



FSFR2100 • Rev.1.1.0 11

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

5. Current Sensing

Current Sensing Using Resistor: FSFR2100 senses

drain current as a negative voltage, as shown in Figure

24 and Figure 25. Half-wave sensing allows low power

dissipation in the sensing resistor, while full-wave

sensing has less switching noise in the sensing signal.

Figure 24. Half-Wave Sensing

Figure 25. Full-Wave Sensing

Current Sensing Using Resonant Capacitor Voltage:

For high-power applications, current sensing using a

resistor may not be available due to the severe power

dissipation in the resistor. In that case, indirect current

sensing using the resonant capacitor voltage can be a

good alternative because the amplitude of the resonant

capacitor voltage (Vcrp-p) is proportional to the resonant

current in the primary side (Ipp-p) as:





 (6)

To minimize power dissipation, a capacitive voltage

divider is generally used for capacitor voltage sensing, as

shown in Figure 26.

delay d d

TRC

sense B

Cr sense B

VCC





sense CON

VV

Figure 26. Current Sensing Using Resonant

Capacitor Voltage

6. Protection Circuits

The FSFR2100 has several self-protective functions,

such as Overload Protection (OLP), Over-Current

Protection (OCP), Abnormal Over-Current Protection

(AOCP), Over-Voltage Protection (OVP), and Thermal

Shutdown (TSD). OLP, OCP, and OVP are auto-restart

mode protections; while AOCP and TSD are latch-mode

protections, as shown in Figure 27.

6.1 Auto-restart Mode Protection: Once a fault

condition is detected, switching is terminated and the

MOSFETs remain off. When LVCC falls to the LVCC stop

voltage of 11.3 V, the protection is reset. The FPS

resumes normal operation when LVCC reaches the start

voltage of 14.5 V.

Control

SG PG

Np Ns

Rsense

Ids

VCS

Control

SG PG

Rsense

Ids

VCS

Ids

VCS

Np Ns

FSFR2100 • Rev.1.1.0 12

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

6.2 Latch-Mode Protection: Once this protection is

triggered, switching is terminated and the MOSFETs

remain off. The latch is reset only when LVCC is

discharged below 5 V.

Figure 27. Protection Blocks

6.3 Over-Current Protection (OCP): When the

sensing pin voltage drops below -0.58 V, OCP is

triggered and the MOSFETs remain off. This protection

has a shutdown time delay of 1.5 µs to prevent

premature shutdown during startup.

6.4 Abnormal Over-Current Protection (AOCP): If

the secondary rectifier diodes are shorted, large current

with extremely high di/dt can flow through the MOSFET

before OCP or OLP is triggered. AOCP is triggered

without shutdown delay when the sensing pin voltage

drops below -0.9V. This protection is latch mode and

reset when LVCC is pulled down below 5 V.

6.5 Overload Protection (OLP): Overload is

defined as the load current exceeding its normal level

due to an unexpected abnormal event. In this situation,

the protection circuit should trigger to protect the power

supply. However, even when the power supply is in the

normal condition, the overload situation can occur during

the load transition. To avoid premature triggering of

protection, the overload protection circuit should be

designed to trigger only after a specified time to

determine whether it is a transient situation or a true

overload situation. Figure 26 shows a typical overload

protection circuit. By sensing the resonant capacitor

voltage on the control pin, the overload protection can be

implemented. Using RC time constant, shutdown delay

can be also introduced. The voltage obtained on the

control pin is given as:

2( ) pp

CON Cr

Bsense

CC 



(7)

where VCrp-p is the amplitude of the resonant capacitor

voltage.

6.6 Over-Voltage Protection (OVP): When the

LVCC reaches 23 V, OVP is triggered. This protection is

used when auxiliary winding of the transformer to supply

VCC to FPS™ is utilized.

6.7 Thermal Shutdown (TSD): The MOSFETs and

the control IC in one package makes it easy for the

control IC to detect the abnormal over-temperature of the

MOSFETs. If the temperature exceeds approximately

130C, the thermal shutdown triggers.

7. PCB Layout Guidelines

Duty unbalance problems may occur due to the radiated

noise from main transformer, the inequality of the

secondary side leakage inductances of main transformer,

and so on. Among them, it is one of the dominant

reasons that the control components in the vicinity of RT

pin are enclosed by the primary current flow pattern on

PCB layout. The direction of the magnetic field on the

components caused by the primary current flow is

changed when the high and low side MOSFET turns on

by turns. The magnetic fields with opposite direction from

each other induce a current through, into, or out of the RT

pin, which makes the turn-on duration of each MOSFET

different. It is highly recommended to separate the

control components in the vicinity of RT pin from the

primary current flow pattern on PCB layout. Figure 28

shows an example for the duty balanced case.

Figure 28. Example for Duty Balancing

FSFR2100 • Rev.1.1.0 13

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Typical Application Circuit (Half-Bridge LLC Resonant Converter)

Application FPS™ Device Input Voltage Range Rated Output Power Output Voltage

(Rated Current)

LCD TV FSFR2100 390 VDC

(340~400 VDC) 200 W 24 V-8.3 A

Features

 High efficiency ( >94% at 400 VDC input)

 Reduced EMI noise through zero-voltage-switching (ZVS)

 Enhanced system reliability with various protection functions

Figure 29. Typical Application Circuit

FSFR2100 • Rev.1.1.0 14

FSFR2100 — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Typical Application Circuit (Continued)

Usually, LLC resonant converters require large leakage inductance value. To obtain a large leakage inductance,

sectional winding method is used.

 Core: EC35 (Ae=106 mm2)

 Bobbin: EC35 (Horizontal)

 Transformer Model Number: SNX-2468-1

Figure 30. Transformer Construction

Pin (S → F) Wire Turns Note

Np 6 → 2 0.08φ×88 (Litz Wire) 36

Ns1 12 → 9 0.08φ×234 (Litz Wire) 4 Bifilar Winding

Ns2 10 → 13 0.08φ×234 (Litz Wire) 4 Bifilar Winding

Pins Specifications Remark

Primary-Side Inductance (Lp) 26 550 H ± 10% 100 kHz, 1 V

Primary-Side Effective Leakage (Lr) 26 110 H ± 10% Short one of the Secondary Windings

For more detailed inf ormation regar ding the tr ansfor mer, visit http://www.santronics-usa.com/documents.html or contact

sales@santronics-usa.com or +1-408-734- 1878 (Sunnyvale, California US A).

23.10

22.90

26.20

25.80

0.70

5.35

5.15

10.70

10.30

3.20

8.00

7.00 5.08

0.70

0.50

15.24

1.30

MAX

0.80

MAX

2.54

1.27

(5X)

2.54

3.81

0.50 3.40

3.00

1.20

3.40

3.00

0.50

(4X)

18.50

17.50

3.48

2.88

0.60

0.40

0.55

6.00

1.50

12.00

14.50

13.50

1.40

1.00

NOTES: UNLESS OTHERWISE SPECIFIED

A. THIS PACKAGE DOES NOT COMPLY TO

ANY CURRENT PACKAGING STANDARD.

B. ALL DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

D. DRAWING FILE NAME: MOD09ACREV3

1 9 2,4,6,8 1,3,5,7,9

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