MCP1703 250 mA, 16V, Low Quiescent Current LDO Regulator Features: Description: * * * * * The MCP1703 is a family of CMOS low dropout (LDO) voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 A of quiescent current (typical). The input operating range is specified from 2.7V to 16.0V, making it an ideal choice for two to six primary cell battery-powered applications, 9V alkaline and one or two cell Li-Ion-powered applications. * * * * * * 2.0 A Typical Quiescent Current Input Operating Voltage Range: 2.7V to16.0V 250 mA Output Current for Output Voltages 2.5V 200 mA Output Current for Output Voltages < 2.5V Low Dropout Voltage, 625 mV typical @ 250 mA for VR = 2.8V 0.4% Typical Output Voltage Tolerance Standard Output Voltage Options: - 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V Output Voltage Range: 1.2V to 5.5V in 0.1V Increments (50 mV increments available upon request) Stable with 1.0 F to 22 F Ceramic Output Capacitance Short-Circuit Protection Overtemperature Protection Applications: * * * * * * * * * * * * * Battery-Powered Devices Battery-Powered Alarm Circuits Smoke Detectors CO2 Detectors Pagers and Cellular Phones Smart Battery Packs Low Quiescent Current Voltage Reference PDAs Digital Cameras Microcontroller Power Solar-Powered Instruments Consumer Products Battery-Powered Data Loggers The MCP1703 is capable of delivering 250 mA with only 625 mV (typical) of input to output voltage differential (VOUT = 2.8V). The output voltage tolerance of the MCP1703 is typically 0.4% at +25C and 3% maximum over the operating junction temperature range of -40C to +125C. Line regulation is 0.1% typical at +25C. Output voltages available for the MCP1703 range from 1.2V to 5.5V. The LDO output is stable when using only 1 F of output capacitance. Ceramic, tantalum, or aluminum electrolytic capacitors can all be used for input and output. Overcurrent limit and overtemperature shutdown provide a robust solution for any application. Package options include the SOT-223-3, SOT-23A, 2x3 DFN-8, and SOT-89-3. Package Types 2x3 DFN-8 * VOUT 1 NC 2 EP 9 NC 3 8 VIN VIN 7 NC 3 6 NC 5 NC GND 4 1 3-Pin SOT-89 (c) 2011 Microchip Technology Inc. 2 GND VOUT Related Literature: * AN765, "Using Microchip's Micropower LDOs", DS00765, Microchip Technology Inc., 2002 * AN766, "Pin-Compatible CMOS Upgrades to Bipolar LDOs", DS00766, Microchip Technology Inc., 2002 * AN792, "A Method to Determine How Much Power a SOT23 Can Dissipate in an Application", DS00792, Microchip Technology Inc., 2001 3-Pin SOT-23A SOT-223-3 VIN 1 2 3 GND VIN VOUT 1 VIN 2 3 GND VOUT * Includes Exposed Thermal Pad (EP); see Table 3-1. DS22049F-page 1 MCP1703 Functional Block Diagrams MCP1703 VOUT VIN Error Amplifier +VIN Voltage Reference + Overcurrent Overtemperature GND Typical Application Circuits MCP1703 VOUT 3.3V VOUT VIN 9V Battery DS22049F-page 2 + CIN 1 F Ceramic VIN VIN COUT 1 F Ceramic IOUT 50 mA GND (c) 2011 Microchip Technology Inc. MCP1703 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VDD..................................................................................+18V All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V) Peak Output Current ...................................................500 mA Storage temperature .....................................-65C to +150C Maximum Junction Temperature ................................. +150C ESD protection on all pins (HBM;MM)............... 4 kV; 400V DC CHARACTERISTICS Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1, ILOAD = 100 A, COUT = 1 F (X7R), CIN = 1 F (X7R), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 7) of -40C to +125C. Parameters Symbol Min Typ Max Units Conditions Input Operating Voltage VIN Input Quiescent Current Iq 2.7 -- 16.0 V Note 1 -- 2.0 5 A IL = 0 mA IOUT_mA 250 -- -- mA For VR 2.5V 50 100 -- mA For VR < 2.5V, VIN 2.7V 100 130 -- mA For VR < 2.5V, VIN 2.95V 150 200 -- mA For VR < 2.5V, VIN 3.2V 200 250 -- mA For VR < 2.5V, VIN 3.45V -- 400 -- mA VIN = VIN(MIN) (Note 1), VOUT = GND, Current (average current) measured 10 ms after short is applied. Input / Output Characteristics Maximum Output Current Output Short Circuit Current IOUT_SC Output Voltage Regulation VOUT VR-3.0% VR0.4% VR+3.0% V VR-2.0% VR0.4% VR+2.0% V VR-1.0% VR0.4% Note 2 VR+1.0% V TCVOUT -- 50 -- ppm/C Line Regulation VOUT/ (VOUTXVIN) -0.3 0.1 +0.3 %/V (VOUT(MAX) + VDROPOUT(MAX)) VIN 16V, Note 1 Load Regulation VOUT/VOUT -2.5 1.0 +2.5 % IL = 1.0 mA to 250 mA for VR >= 2.5V IL = 1.0 mA to 200 mA for VR < 2.5V VIN = 3.65V, Note 4 VOUT Temperature Coefficient Note 1: 2: 3: 4: 5: 6: 7: 1% Custom Note 3 The minimum VIN must meet two conditions: VIN 2.7V and VIN (VOUT(MAX) + VDROPOUT(MAX)). VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 A. TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained junction temperatures above 150C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. (c) 2011 Microchip Technology Inc. DS22049F-page 3 MCP1703 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1, ILOAD = 100 A, COUT = 1 F (X7R), CIN = 1 F (X7R), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 7) of -40C to +125C. Parameters Dropout Voltage Note 1, Note 5 Symbol Min Typ Max Units VDROPOUT -- 330 650 mV -- 525 725 mV IL = 250 mA, 3.3V VR < 5.0V -- 625 975 mV -- 750 1100 mV IL = 250 mA, 2.8V VR < 3.3V IL = 250 mA, 2.5V VR < 2.8V -- -- -- mV VR < 2.5V, See Maximum Output Current Parameter TDELAY -- 1000 -- s VIN = 0V to 6V, VOUT = 90% VR, RL = 50 resistive eN -- 8 PSRR -- 44 -- TSD -- 150 -- Output Delay Time Output Noise Power Supply Ripple Rejection Ratio Thermal Shutdown Protection Note 1: 2: 3: 4: 5: 6: 7: Conditions IL = 250 mA, VR = 5.0V V/(Hz)1/2 IL = 50 mA, f = 1 kHz, COUT = 1 F dB f = 100 Hz, COUT = 1 F, IL = 100 A, VINAC = 100 mV pk-pk, CIN = 0 F, VR = 1.2V C The minimum VIN must meet two conditions: VIN 2.7V and VIN (VOUT(MAX) + VDROPOUT(MAX)). VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 A. TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained junction temperatures above 150C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. TEMPERATURE SPECIFICATIONS(1) Parameters Sym Min Typ Max Units Conditions Temperature Ranges Operating Junction Temperature Range TJ -40 -- +125 C Steady State Maximum Junction Temperature TJ -- -- +150 C Transient Storage Temperature Range TA -65 -- +150 C Thermal Resistance, 3LD SOT-223 JA JC -- -- 62 15 -- -- C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board Thermal Resistance, 3LD SOT-23A JA JC -- -- 336 110 -- -- C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board Thermal Resistance, 3LD SOT-89 JA JC -- -- 153,3 100 -- -- C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board Thermal Resistance, 8LD 2x3 DFN JA JC -- -- 93 26 -- -- C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board Thermal Package Resistance (Note 2) Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained junction temperatures above 150C can impact the device reliability. 2: Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging information. DS22049F-page 4 (c) 2011 Microchip Technology Inc. MCP1703 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant. 120 VOUT = 1.2V IOUT = 0 A 5.00 4.00 GND Current (A) Quiescent Current (A) 6.00 +130C -45C 3.00 +90C +25C 2.00 1.00 0C 0.00 2 VOUT = 1.2V VIN = 2.7V 100 80 60 40 20 0 4 6 8 10 12 14 16 0 18 40 80 FIGURE 2-1: Voltage. Quiescent Current vs. Input FIGURE 2-4: Current. 5.00 4.00 +130C 3.00 +90C 2.00 +25C -45C 1.00 0C 0.00 200 VOUT = 5.0V VIN = 6.0V 100 80 60 VOUT = 2.5V VIN = 3.5V 40 20 0 2 4 6 8 10 12 14 16 18 0 50 100 Input Voltage (V) FIGURE 2-2: Voltage. Quiescent Current (A) 0C 4.00 -45C +130C 3.00 +25C +90C 2.00 FIGURE 2-5: Current. 200 250 Ground Current vs. Load 3.00 VOUT = 5.0V IOUT = 0 A 5.00 150 Load Current (mA) Quiescent Current vs. Input 6.00 Quiescent Current (A) 160 Ground Current vs. Load 120 VOUT = 2.5V IOUT = 0 A GND Current (A) Quiescent Current (A) 6.00 120 Load Current (mA) Input Voltage (V) 1.00 VOUT = 2.5V VIN = 3.5V 2.50 VOUT = 1.2V VIN = 2.7V IOUT = 0 mA 2.00 1.50 1.00 VOUT = 5.0V VIN = 6.0V 0.50 0.00 6 8 10 12 14 16 18 Input Voltage (V) FIGURE 2-3: Voltage. Quiescent Current vs. Input (c) 2011 Microchip Technology Inc. -45 -20 5 30 55 80 105 130 Junction Temperature (C) FIGURE 2-6: Quiescent Current vs. Junction Temperature. DS22049F-page 5 MCP1703 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. 1.24 VOUT = 1.2V ILOAD = 0.1 mA 1.230 -45C Output Voltage (V) Output Voltage (V) 1.240 0C 1.220 1.210 +130C 1.200 +90C +25C 1.190 1.180 1.23 0C -45C +25C 1.22 +90C 1.21 +130C 1.20 VIN = 3.0V VOUT = 1.2V 1.19 1.18 2 4 6 8 10 12 14 16 18 0 20 40 60 FIGURE 2-7: Voltage. Output Voltage vs. Input FIGURE 2-10: Current. VIN = 3.5V VOUT = 2.5V 2.53 2.54 +90C +130C 2.52 Output Voltage vs. Load 2.54 VOUT = 2.5V ILOAD = 0.1 mA 2.56 Output Voltage (V) Output Voltage (V) 2.58 2.50 2.48 0C -45C +25C 2.46 2.44 2.52 +25C +90C 2.51 2.50 2.49 2.48 0C -45C 2.47 +130C 2.46 2 4 6 8 10 12 14 16 18 0 50 Input Voltage (V) FIGURE 2-8: Voltage. 5.16 Output Voltage vs. Input 5.04 150 200 5.00 -45C 0C 4.96 +25C 4.92 250 Output Voltage vs. Load 5.06 +90C +130C FIGURE 2-11: Current. Output Voltage (V) 5.08 100 Load Current (mA) VOUT = 5.0V ILOAD = 0.1 mA 5.12 Output Voltage (V) 80 100 120 140 160 180 200 Load Current (mA) Input Voltage (V) 4.88 5.04 VIN = 6V VOUT = 5.0V +90C +130C 5.02 5.00 4.98 0C 4.96 -45C +25C 4.94 4.92 6 8 10 12 14 16 18 0 Input Voltage (V) FIGURE 2-9: Voltage. DS22049F-page 6 Output Voltage vs. Input 50 100 150 200 250 Load Current (mA) FIGURE 2-12: Current. Output Voltage vs. Load (c) 2011 Microchip Technology Inc. MCP1703 Dropout Voltage (V) Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 VOUT = 2.5V +130C +90C +25C +0C -45C 0 25 50 75 100 125 150 175 200 225 250 Load Current (mA) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 Dropout Voltage vs. Load VOUT = 5.0V +130C +90C +25C +0C -45C 0 25 50 FIGURE 2-16: Short Circuit Current (mA) Dropout Voltage (V) FIGURE 2-13: Current. Dynamic Line Response. 900 800 VOUT = 2.5V ROUT < 0.1? 700 600 500 400 300 200 100 0 75 100 125 150 175 200 225 250 2 4 6 8 Load Current (mA) FIGURE 2-14: Current. Dropout Voltage vs. Load 10 12 14 16 18 Input Voltage (V) FIGURE 2-17: Input Voltage. Short Circuit Current vs. Load Regulation (%) 1.00 VOUT = 1.2V IOUT = 1 mA to 200 mA VIN = 6V 0.90 VIN = 12V 0.80 0.70 0.60 0.50 VIN = 16V 0.40 0.30 VIN = 14V VIN = 3.8V VIN = 3.2V 0.20 -45 -20 5 30 55 80 105 130 Temperature (C) FIGURE 2-15: Dynamic Line Response. (c) 2011 Microchip Technology Inc. FIGURE 2-18: Temperature. Load Regulation vs. DS22049F-page 7 MCP1703 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. 1.00 VIN = 16V 0.80 0.20 VOUT = 2.5V IOUT = 1 mA to 250 mA 0.60 Line Regulation (%/V) Load Regulation (%) 1.20 VIN = 6V 0.40 0.20 0.00 VIN = 3.5V VIN = 12V -0.20 VIN = 14V -0.40 -45 -20 5 30 55 80 105 VOUT = 2.5V VIN = 3.5V to 16V 0.16 200 mA 0.08 100 mA 0.04 0 mA 0.00 -45 130 -20 5 Load Regulation (%) 0.80 FIGURE 2-22: Temperature. VOUT = 5.0V IOUT = 1 to 250 mA VIN = 16V VIN = 6V 0.60 VIN = 12V 0.40 0.20 0.00 VIN = 8V -0.20 VIN = 14V -0.40 -45 -20 5 30 55 80 105 0.14 130 VOUT = 5.0V VIN = 6.0V to 16.0V 200mA 0.14 250 mA 0.12 0.10 0 mA 100 mA 0.08 -45 -20 5 30 55 80 105 130 Temperature (C) Load Regulation vs. FIGURE 2-23: Temperature. Line Regulation vs. 0 VIN = 3.0 to 16.0V VOUT = 1.2V -10 0.12 0.10 105 0.06 130 -20 200 mA 1 mA 0.08 0.06 0 mA 0.04 100 mA PSRR (dB) Line Regulation (%/V) 0.16 80 Line Regulation vs. 0.16 Temperature (C) FIGURE 2-20: Temperature. 55 0.18 Line Regulation (%/V) Load Regulation vs. 1.00 30 Temperature (C) Temperature (C) FIGURE 2-19: Temperature. 250 mA 0.12 -30 -40 -50 VR=1.2V VIN=2.7V VINAC = 100 mV p-p CIN=0 F IOUT=100 A -60 -70 0.02 -80 0.00 -45 -20 5 30 55 80 105 130 -90 0.01 0.1 Temperature (C) FIGURE 2-21: Temperature. DS22049F-page 8 Line Regulation vs. FIGURE 2-24: 1 10 Frequency (kHz) 100 1000 PSRR vs. Frequency. (c) 2011 Microchip Technology Inc. MCP1703 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. 0 -10 PSRR (dB) -20 -30 -40 VR=5.0V VIN=6.0V VINAC = 100 mV p-p CIN=0 F IOUT=100 A -50 -60 -70 -80 -90 0.01 0.1 FIGURE 2-25: 1 10 Frequency (KHz) 1000 PSRR vs. Frequency. 100 VR=5.0V, VIN=6.0V Noise (V/ Hz) 100 FIGURE 2-28: Dynamic Load Response. FIGURE 2-29: Dynamic Load Response. IOUT=50 mA 10 1 VR=2.8V, VIN=3.8V 0.1 VR=1.2V, VIN=2.7V 0.01 0.001 0.01 FIGURE 2-26: 0.1 1 10 Frequency (kHz) 100 1000 Output Noise vs. Frequency. Output Voltage (V) 4.0 R LOAD=10 k 3.0 2.0 VR = 2.5V 1.0 0.0 4.0 FIGURE 2-27: Power Up Timing. (c) 2011 Microchip Technology Inc. FIGURE 2-30: Voltage. 3.0 2.0 1.0 Input Voltage (V) 0.0 Output Voltage vs. Input DS22049F-page 9 MCP1703 Output Voltage (V) 4.0 VR = 3.3V 3.0 2.0 1.0 ILOAD = 1 mA ILOAD = 44 A 0.0 4.0 3.0 FIGURE 2-31: Voltage. DS22049F-page 10 2.0 1.0 Input Voltage (V) 0.0 Output Voltage vs. Input (c) 2011 Microchip Technology Inc. MCP1703 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: MCP1703 PIN FUNCTION TABLE Pin No. 2x3 DFN-8 Pin No. SOT-223-3 Pin No. SOT-23A Pin No. SOT-89-3 Name 4 2,Tab 1 1 GND Ground Terminal 1 3 2 3 VOUT Regulated Voltage Output 8 1 3 2,Tab VIN Unregulated Supply Voltage Function 2, 3, 5, 6, 7 -- -- -- NC No Connection 9 -- -- -- EP Exposed Thermal Pad (EP); must be connected to VSS 3.1 Ground Terminal (GND) Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. Only the LDO bias current (2.0 A typical) flows out of this pin; there is no high current. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the negative side of the load. 3.2 Regulated Output Voltage (VOUT) Connect VOUT to the positive side of the load and the positive terminal of the output capacitor. The positive side of the output capacitor should be physically located as close to the LDO VOUT pin as is practical. The current flowing out of this pin is equal to the DC load current. 3.3 Unregulated Input Voltage (VIN) Connect VIN to the input unregulated source voltage. Like all low dropout linear regulators, low source impedance is necessary for the stable operation of the LDO. The amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 1 F of capacitance will ensure stable operation of the LDO circuit. For applications that have load currents below 100 mA, the input capacitance requirement can be lowered. The type of capacitor used can be ceramic, tantalum, or aluminum electrolytic. The low ESR characteristics of the ceramic will yield better noise and PSRR performance at high-frequency. 3.4 Exposed Thermal Pad (EP) There is an internal electrical connection between the Exposed Thermal Pad (EP) and the VSS pin; they must be connected to the same potential on the Printed Circuit Board (PCB). (c) 2011 Microchip Technology Inc. DS22049F-page 11 MCP1703 4.0 DETAILED DESCRIPTION 4.1 Output Regulation 4.3 A portion of the LDO output voltage is fed back to the internal error amplifier and compared with the precision internal band gap reference. The error amplifier output will adjust the amount of current that flows through the P-Channel pass transistor, thus regulating the output voltage to the desired value. Any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to Figure 4-1). 4.2 Overtemperature The internal power dissipation within the LDO is a function of input-to-output voltage differential and load current. If the power dissipation within the LDO is excessive, the internal junction temperature will rise above the typical shutdown threshold of 150C. At that point, the LDO will shut down and begin to cool to the typical turn-on junction temperature of 130C. If the power dissipation is low enough, the device will continue to cool and operate normally. If the power dissipation remains high, the thermal shutdown protection circuitry will again turn off the LDO, protecting it from catastrophic failure. Overcurrent The MCP1703 internal circuitry monitors the amount of current flowing through the P-Channel pass transistor. In the event of a short-circuit or excessive output current, the MCP1703 will turn off the P-Channel device for a short period, after which the LDO will attempt to restart. If the excessive current remains, the cycle will repeat itself. MCP1703 VOUT VIN Error Amplifier +VIN Voltage Reference + Overcurrent Overtemperature GND FIGURE 4-1: DS22049F-page 12 Block Diagram. (c) 2011 Microchip Technology Inc. MCP1703 5.0 FUNCTIONAL DESCRIPTION The MCP1703 CMOS low dropout linear regulator is intended for applications that need the lowest current consumption while maintaining output voltage regulation. The operating continuous load range of the MCP1703 is from 0 mA to 250 mA (VR 2.5V). The input operating voltage range is from 2.7V to 16.0V, making it capable of operating from two or more alkaline cells or single and multiple Li-Ion cell batteries. 5.1 Input The input of the MCP1703 is connected to the source of the P-Channel PMOS pass transistor. As with all LDO circuits, a relatively low source impedance (10) is needed to prevent the input impedance from causing the LDO to become unstable. The size and type of the capacitor needed depends heavily on the input source type (battery, power supply) and the output current range of the application. For most applications (up to 100 mA), a 1 F ceramic capacitor will be sufficient to ensure circuit stability. Larger values can be used to improve circuit AC performance. 5.2 Output The maximum rated continuous output current for the MCP1703 is 250 mA (VR 2.5V). For applications where VR < 2.5V, the maximum output current is 200 mA. A minimum output capacitance of 1.0 F is required for small signal stability in applications that have up to 250 mA output current capability. The capacitor type can be ceramic, tantalum, or aluminum electrolytic. The Equivalent Series Resistance (ESR) range on the output capacitor can range from 0 to 2.0. The output capacitor range for ceramic capacitors is 1 F to 22 F. Higher output capacitance values may be used for tantalum and electrolytic capacitors. Higher output capacitor values pull the pole of the LDO transfer function inward that results in higher phase shifts which in turn cause a lower crossover frequency. The circuit designer should verify the stability by applying line step and load step testing to their system when using capacitance values greater than 22 F. 5.3 Output Rise Time When powering up the internal reference output, the typical output rise time of 1000 s is controlled to prevent overshoot of the output voltage. (c) 2011 Microchip Technology Inc. DS22049F-page 13 MCP1703 6.0 APPLICATION CIRCUITS & ISSUES 6.1 The MCP1703 is most commonly used as a voltage regulator. Its low quiescent current and low dropout voltage make it ideal for many battery-powered applications. MCP1703 VIN VOUT IOUT 50 mA COUT 1 F Ceramic FIGURE 6-1: 6.1.1 VIN 2.7V to 4.8V GND T J ( MAX ) = P TOTAL x R JA + T AMAX Where: Typical Application VOUT 1.8V EQUATION 6-2: CIN 1 F Ceramic Typical Application Circuit. TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation RJA = Thermal resistance from junction-to-ambient TAMAX = Maximum ambient temperature The maximum power dissipation capability for a package can be calculated given the junction-toambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION 6-3: APPLICATION INPUT CONDITIONS ( T J ( MAX ) - T A ( MAX ) ) P D ( MAX ) = --------------------------------------------------R JA Package Type = SOT-23A Input Voltage Range = 2.7V to 4.8V VIN maximum = 4.8V VOUT typical = 1.8V IOUT = 50 mA maximum 6.2 Power Calculations 6.2.1 Where: PD(MAX) = Maximum device power dissipation TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature RJA = Thermal resistance from junction-to-ambient POWER DISSIPATION The internal power dissipation of the MCP1703 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (2.0 A x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-4: T J ( RISE ) = P D ( MAX ) x R JA Where: TJ(RISE) = Rise in device junction temperature over the ambient temperature PTOTAL = Maximum device power dissipation RJA = Thermal resistance from junction to ambient EQUATION 6-1: P LDO = ( VIN ( MAX ) ) - V OUT ( MIN ) ) x I OUT ( MAX ) ) Where: PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage EQUATION 6-5: T J = T J ( RISE ) + T A Where: The maximum continuous operating junction temperature specified for the MCP1703 is +125C. To estimate the internal junction temperature of the MCP1703, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (RJA). The thermal resistance from junction to ambient for the SOT-23A pin package is estimated at 336C/W. DS22049F-page 14 TJ = Junction temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA = Ambient temperature (c) 2011 Microchip Technology Inc. MCP1703 6.3 Voltage Regulator Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation, as a result of ground current, is small enough to be neglected. 6.3.1 POWER DISSIPATION EXAMPLE Package Package Type: SOT-23A Input Voltage: VIN = 2.7V to 4.8V LDO Output Voltages and Currents Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below. TJ = TJRISE + TA(MAX) TJ = 91.3C Maximum Package Power Dissipation at +40C Ambient Temperature Assuming Minimal Copper Usage. SOT-23A (336.0C/Watt = RJA) PD(MAX) = (+125C - 40C) / 336C/W VOUT = 1.8V IOUT = 50 mA Maximum Ambient Temperature PD(MAX) = 253 milli-Watts SOT-89 (153.3C/Watt = RJA) PD(MAX) = (+125C - 40C) / 153.3C/W TA(MAX) = +40C Internal Power Dissipation PD(MAX) = 0.554 Watts SOT-223 (62.9C/Watt = RJA) Internal Power dissipation is the product of the LDO output current times the voltage across the LDO (VIN to VOUT). PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX) PLDO = (4.8V - (0.97 x 1.8V)) x 50 mA PLDO = 152.7 milli-Watts Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (RJA) is derived from an EIA/JEDEC standard for measuring thermal resistance for small surface mount packages. The EIA/JEDEC specification is JESD51-7, "High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages". The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. Refer to AN792, "A Method to Determine How Much Power a SOT23 Can Dissipate in an Application", (DS00792), for more information regarding this subject. TJ(RISE) = PTOTAL x RqJA PD(MAX) = (+125C - 40C) / 62.9C/W PD(MAX) = 1.35 Watts 6.4 Voltage Reference The MCP1703 can be used not only as a regulator, but also as a low quiescent current voltage reference. In many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. When the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the MCP1703 LDO. The low-cost, low quiescent current and small ceramic output capacitor are all advantages when using the MCP1703 as a voltage reference. Ratio Metric Reference 2 A Bias CIN 1 F PIC(R) Microcontroller MCP1703 VIN VOUT GND COUT 1 F VREF ADO AD1 Bridge Sensor TJRISE = 152.7 milli-Watts x 336.0C/Watt TJRISE = 51.3C (c) 2011 Microchip Technology Inc. FIGURE 6-2: Using the MCP1703 as a Voltage Reference. DS22049F-page 15 MCP1703 6.5 Pulsed Load Applications For some applications, there are pulsed load current events that may exceed the specified 250 mA maximum specification of the MCP1703. The internal current limit of the MCP1703 will prevent high peak load demands from causing non-recoverable damage. The 250 mA rating is a maximum average continuous rating. As long as the average current does not exceed 250 mA, pulsed higher load currents can be applied to the MCP1703. The typical current limit for the MCP1703 is 500 mA (TA +25C). DS22049F-page 16 (c) 2011 Microchip Technology Inc. MCP1703 7.0 PACKAGING INFORMATION 7.1 Package Marking Information Standard Options for SOT-23A and SOT-89 3-Pin SOT-23A Example: Extended Temp Symbol 3-Lead SOT-89 XXXYYWW NNN Voltage * HWNN Example: HM1014 Standard Options for SOT-223 256 Extended Temp Symbol Voltage * Symbol Voltage * 12 15 18 25 28 1.2 1.5 1.8 2.5 2.8 30 33 40 50 -- 3.0 3.3 4.0 5.0 -- 3-Lead SOT-223 Tab is GND Example: Tab is GND Custom XXXXXXX XXXYYWW NNN 2 Symbol HM 1.2 HT 3.0 HP 1.5 HU 3.3 HQ 1.8 HV 4.0 HR 2.5 HW 5.0 HS 2.8 -- -- * Custom output voltages available upon request. Contact your local Microchip sales office for more information. XXNN 1 Voltage * MCP1703 15E1014 256 33 3.3 -- -- * Custom output voltages available upon request. Contact your local Microchip sales office for more information. 3 Standard Options for 8-Lead DFN (2 x 3) Extended Temp 8-Lead DFN (2 x 3) Symbol XXX YWW NN Voltage * Symbol Example: Voltage * AAU 1.2 AAY 3.3 AAV 1.8 AFR 4.0 AAW 2.5 AAZ 5.0 AAT 3.0 -- -- * Custom output voltages available upon request. Contact your local Microchip sales office for more information. Legend: XX...X Y YY WW NNN e3 * Note: AAU 014 25 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. (c) 2011 Microchip Technology Inc. DS22049F-page 17 MCP1703 /HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU &% >627$@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ D e1 e 2 1 E E1 N b A c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page 18 (c) 2011 Microchip Technology Inc. MCP1703 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging (c) 2011 Microchip Technology Inc. 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DS22049F-page 21 MCP1703 /HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU '% >627@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ D b2 E1 E 3 2 1 e e1 A2 A b c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page 22 (c) 2011 Microchip Technology Inc. MCP1703 /HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU '% >627@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ (c) 2011 Microchip Technology Inc. DS22049F-page 23 MCP1703 /HDG3ODVWLF'XDO)ODW1R/HDG3DFNDJH 0& [[PP%RG\>')1@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ e D b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page 24 (c) 2011 Microchip Technology Inc. MCP1703 /HDG3ODVWLF'XDO)ODW1R/HDG3DFNDJH 0& [[PP%RG\>')1@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ (c) 2011 Microchip Technology Inc. DS22049F-page 25 MCP1703 NOTES: DS22049F-page 26 (c) 2011 Microchip Technology Inc. MCP1703 APPENDIX A: REVISION HISTORY Revision F (February 2011) Revision A (June 2007) * Original Release of this Document. The following is the list of modifications: 1. 2. 3. 4. Added a new line to Output Voltage Regulation in the DC Characteristics table. Added Figure 2-30 and Figure 2-31. Added a new line to the Tolerance field in the Product Identification System section. Added a new custom part to the Standard Options for SOT-223 table in the Package Marking Information section. Revision E (November 2010) The following is the list of modifications: 1. Updated the Thermal Resistance Typical value for the SOT-89 package in the Junction Temperature Estimate section. Revision D (September 2009) The following is the list of modifications: 1. 2. 3. 4. 5. 6. Added the 8-Lead 2x3 DFN package. Updated the Temperature Specification table. Updated Table 3-1. Added Section 3.4 "Exposed Thermal Pad (EP)". Updated the Package Outline Drawings and the information for the 8-Lead 2x3 DFN package. Added the information for the 8-Lead 2x3 DFN package in the Product Identification System section. Revision C (June 2009) The following is the list of modifications: 1. 2. 3. 4. Absolute Maximum Ratings: Updated this section. DC Characteristics table: Updated. Temperature Specifications table: Updated. Package Information: Update Package Outline Drawings. Revision B (February 2008) The following is the list of modifications: 1. 2. 3. 4. Updated Temperature Specifications table. Updated Table 3-1. Updated Section 5.2 "Output". Added SOT-223 Landing Pattern Outline drawing. (c) 2011 Microchip Technology Inc. DS22049F-page 27 MCP1703 NOTES: DS22049F-page 28 (c) 2011 Microchip Technology Inc. MCP1703 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X- XX X X X/ XX Tape Output Feature Tolerance Temp. Package and Reel Voltage Code Examples: a) b) c) Device: MCP1703: 250 mA, 16V Low Quiescent Current LDO Tape and Reel: T = Tape and Reel d) e) f) Output Voltage *: 12 = 1.2V "Standard" 15 = 1.5V "Standard" 18 = 1.8V "Standard" 25 = 2.5V "Standard" 28 = 2.8V "Standard" 30 = 3.0V "Standard" 33 = 3.3V "Standard" 40 = 4.0V "Standard" 50 = 5.0V "Standard" *Contact factory for other output voltage options. Extra Feature Code: 0 = Fixed Tolerance: 1 = 1.0% (Custom) 2 = 2.0% (Standard) Temperature: E = -40C to +125C Package Type: CB DB MB MC = = = = g) h) i) j) MCP1703T-1202E/XX: 1.2V Low Quiescent LDO, Tape and Reel MCP1703T-1502E/XX: 1.5V Low Quiescent LDO, Tape and Reel MCP1703T-1802E/XX: 1.8V Low Quiescent LDO, Tape and Reel MCP1703T-2502E/XX: 2.5V Low Quiescent LDO, Tape and Reel MCP1703T-2802E/XX: 2.8V Low Quiescent LDO, Tape and Reel MCP1703T-3002E/XX: 3.0V Low Quiescent LDO, Tape and Reel MCP1703T-3302E/XX: 3.3V Low Quiescent LDO, Tape and Reel MCP1703T-3602E/XX: 3.6V Low Quiescent LDO, Tape and Reel MCP1703T-4002E/XX: 4.0V Low Quiescent LDO, Tape and Reel MCP1703T-5002E/XX: 5.0V Low Quiescent LDO, Tape and Reel XX = = = = CB for 3LD SOT-23A package DB for 3LD SOT-223 package MB for 3LD SOT-89 package MC for 8LD DFN package. Plastic Small Outline Transistor (SOT-23A) 3-lead, Plastic Small Outline Transistor (SOT-223) 3-lead, Plastic Small Outline Transistor (SOT-89) 3-lead. Plastic Dual Flat, No Lead Package (DFN) 2x3, 8-lead. (c) 2011 Microchip Technology Inc. DS22049F-page 29 MCP1703 NOTES: DS22049F-page 30 (c) 2011 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2011, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-60932-941-9 Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. (c) 2011 Microchip Technology Inc. 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