SAMSUNG SEMICONDUCTOR INC LYE D BP esesaye O007b40 & i eee NPN TRIPLE DIFFUSED KSD5017 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT -* 7-33-11 APPLICATIONS TO-3P(F) "High CollectorBase Voltage Vceo=1500V . ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol | Rating Unit Collector-Base Voltage Veso 1500 Vv Collector-Emitter Voltage Veeco 800 v Emitter-Base Voltage Veso 6 Vv Collector Current Ig 6 A Collector Current (Peak) le 16 A Collector Dissipation (T3=25C) Pe 60 WwW Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 ~ c i} 1. Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (T, =25C) Characteristic Symbo! Test Condition Min Typ Max Unit Collector Cutoff Current leno Vca=B800V, le=O . 10 pA Emitter Cutoff Current leBo Vep=5V, fo=0 1 mA DC Current Gain Bre Vce=5V, b= 1A 8 Collector Emitter Saturation Voltage Vce(sat) {| b=5A, Ip=1A v Base-Emitter Saturation Voltage Vee(sat) k=5A, lp=1A 1.6 Vv Current Gain Bandwidth Product fr Vce=10V, k=1A 3 . MHz Fall Time t c=5A, Ip1=1A 0.4 ns Ip2=2A, RL=400 ce SAMSUNG SEMICONDUCTOR 255SAMSUNG SEMICONDUCTOR INC KSD5017 . oN : STATIC CHARACTERISTIC \e{A), COLLECTOR CURRENT o {g=0" 1 2 3 4 6 6 7 8 9 Veel), COLLECTOR-EMITTER VOLTAGE * DC CURRENT GAIN z < o & wi ec ze > oO g a O4 0.2 05 1 2 5 IcfA), COLLECTOR CURRENT TURN ON TIME 10 5 yg 2 E- Ww gz S54 ee a og ge Foos 0.2 o.7 s U1 --0.2 05 = -1 -2 -5 I{A). BASE CURRENT LYE D Beceui42 OOU7Lal 2 we Ves(eatX), COLLECTOR-EMITTER "NPN THIPLE DIFFUSED PLANAR SILICON TRANSISTOR T-33-11 BASE-EMITTER ON VOLTAGE Ic(A), COLLECTOR CURRENT 0.2 04 0.8 O.8 | 1,0 1.2 Vee(), BASE-EMITTER VOLTAGE COLLECTOR-EMITTEAR SATURATION VOLTAGE SATURATION VOLTAGE 2 28 Ss ' nN a S 3 a 2 & 0.01 at 0.2 0.5 1 2 8 10 ({A), COLLECTOR CURRENT SAFE OPERATING AREA. 3 9 a Ic{A}, COLLECTOR CURRENT rey ~ 2 _ 0.05 0.02 0.0 1 2 10 20 50 100 200 500 1000 Vee(V), COLLECTOR-EMITTER VOLTAGE cee SAMSUNG SEMICONDUCTOR 256LYE D Bp eseuaua o007b82 1 i _ er eee ee NPN TRIPLE DIFFUSED KSD5017, PLANAR SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR INC - _ T-33-11 REVERSE BIAS SAFE opedaTiNG AREA . POWER DERATING a0 g 70 a o ao 9 i g < Ss g 5 50 z ? g g 1 e 40 J os 3 8 & 30 g 02 z 3 ot * 20 a 0.05 10 0.02 L=600.4 0.01 0 10 20 50 100 200 500 1000 2000 5000 10000 25 50 75 100 125 150 $75 200 Vext), COLLECTOR-EMITTER VOLTAGE ' Te{*C), CASE TEMPERATURE cig samsunc SEMICONDUCTOR ; 257SAMSUNG SEMICONDUCTOR: INC | 4NE D escuse O007b43 1 i BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR. T-33-11 . HIGH VOLTAGE SWITCHING | ' USE IN HORIZONTAL DEFLECTION TO-220 OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit Collector-Base Voltage Veso 400 Vv Cotfector-Emitter Voltage Veco 200 Vv Emitter-Base Voltage - Veo 6 Vv Collector Current tc 7 A Collector Peck Current fom 10 -A Base Current le ' 4 A Collector Dissipation Po 60 WwW Junction Temperature Tj . 150 C Storage Temperature _ Tstg -65~150 C 1. Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (T, =25C) ce SAMSUNG SEMICONDUCTOR Characteristic Symbol . Test Condition Min | Max | Unit Collector Cutoff Current (Vae=0) lees Vce=400V, Vec=0 5 mA Vce=250V, Vee=0 100 vA Vce=250V, Vee=0, To=150C 1 mA Emitter Cutoff Current (Ic=0) leso Vere=6V, Ic=O0 1 mA Collector Emitter Saturation Voltage . : ; BU406 Vce(sat) Ic=5A, lp=0.5A 1 Vv : BU406H lc=5A, lg=0.8A TH ve : BU408 ic=6A, lp=1.2A 1 Vv Base Emitter Saturation Voltage . > BU406 - [| Vee(sat) k=5A, lg=0.5A 1.2 Vv : BU406H Ic=5A, tp=0.8A 1.2 Vv : BU408 tc=6A, Ip=1.2A 1.5 Vv Current Gain-Bandwidth Product fr Vce= 10V, [c=0.5A 10 MHz Tum-Off Time : BU406 tott e=5A, lp=0.5A 0.76 uS : BU406H Ib=5A, Ip=0.8A 0.4 uS : BU408 | k=6A, b=1.2A 0.4} ps 258=> SAMSUNG SEMICONDUCTOR INC LYE D Bf escyiue OO0?b44 3 BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR. T-33-11 STATIC CHARAGTERISTIC DC CURRENT GAIN & = z z? 3 3 g Zz FE # 6 Wy > a o 8 8 f a 1 2 3 4 Ss 6 7 8 9 10 2 & 10 20 50 100 200 001000 20005000 10000 Vee{), COLLECTOR-EMITTER VOLTAGE to{(mA), COLLECTOR CURRENT ' Meee . BASE-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE COLLECTOR-EMITTER SATURATION VOLTAGE 1000 g 500 5 3 $ 200 3 us = 100 g = FE R 5 50 5 : = 20 & 3 10 yg Go = 5 6 3 > 2 1 2 & 10 20 50 100 200 0010002000500010000 ' 2 5 10 20 50 100 ic(mA}, COLLECTOR CURRENT . VealV), COLLECTOR-BASE VOLTAGE POWER DERATING , SAFE OPERATING AREA z 5 ad S a & g 50 5 3 c 6 6 & 40 5 - Yoe2 3 a 30 8 Pad = +t = $ a 20 al 0s 10 a2 0O.t 0 25 50 75 100 126 #150 175 200 1 2 6 10 20 50 100 200 500 1000 Te(*C), CASE TEMPERATURE Vee(}, COLLECTOR-EMITTER VOLTAGE cde SAMSUNG SEMICONDUCTOR . 259