Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1526 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The pPA1526 is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES 4V driving is possible Large Current and Low On-state Resistance ID(pulse) = +8 A Rosion) $= 0.30 Q TYP. (Ves = 10 V) Roston) = 0.35 @ TYP. (Vas = 4 V) @ 2.54 mm Pitch (0.1 inch) ORDERING INFORMATION Part Number uPA1526H Package 10-Pin SIP Quality Grade Standard Please refer to Quality grade on NEC Semiconductor Devices (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Drain to Source Voltage Vpss 100 V Gate to Source Voltage Vessiac) +20 Vv Drain Current (DC) IDiD) +2.0 A/unit Drain Current (pulse) ID(pulseX* +8.0 A/unit Total Power Dissipation (4 circuits) <Tc = 25 C> P11 28 w Total Power Dissipation (4 circuits) <Ta = 25 C> Pr2 3.5 WwW Channel Temperature Teh 150 C Storage Temperature Tstg 55 to +150 C * PW S 10 ms, Duty Cycle = 10 % oO A rt + PACKAGE DIMENSIONS {in millimeters) 26.8 MAX. 4.0 Zz = 2 14 14 0,620.1 ee 0.50.1 12345678910 ELECTRODE CONNECTION 2,4,6,8 GATE 3,5,7,9 DRAIN 1,10 SOURCE PIN CONNECTION 3 5 7 g 4 6 8 10 Drain (D) 2,4,6,8 ; Gate (G) | 3,5,7,9 ; Drain (D) 1,10 ; Source (S) Gate (G} Source (S) Document No. IC-3332 Date Published December 1993 M Printed in Japan NEC Corporation 1993NEC uPA1526 ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain Leakage Current Ipss 10 HA Vos = 100 V, Ves = 0 Gate to Source Leakage Current Icss +100 nA Ves = +20 V, Vos = 0 Gate to Source Cutoff Voltage Vasiofh 1.0 2.5 Vv Vos = 10 V, ID=1mA Forward Transfer Admittance [ yts | 1.0 s Vos = 10 V, ID=1A Drain to Source On-state Resistance Rpston)1 0.3 0.4 Q Ves=10V,IDb=1A Drain to Source On-state Resistance Ros(on2 0.35 0.6 Q Ves =4V,1D=0.8A Input Capacitance Ciss 500 pF Vos = 10 V Output Capacitance Coss 120 pF Ves = 0 . f= 1.0 MHz Reverse Transfer Capacitance Crss 30 pF Turn-On Delay Time tdion) 10 ns loz 1A . . Ves = 10 V Rise Time tr 20 ns Vec = 50 V Turn-Off Delay Time tdioff 80 ns Ru = 50 Q, Rin = 10 2 See Fig. 1 Fall Time tf 20 ns Fig. 1 Switching Test Circuit Rin PG. Rin= 10.2NEC TYPICAL CHARACTERISTICS (Ta = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 4 Circuits 3 Circuits 2 Circuits 1 Circuit Pr ~ Total Power Dissipation W 0 25 50 75 100 125 150 Ta - Ambient Temperature C DERATING CURVE OF SAFE OPERATING AREA x i @ 100 = oO oO oa 80 @o @ iiss 5 60 Oo a = 40 8 8 20 ke To 0 50 100 150 Tc - Case Temperature C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 8 10V Pulsed -F oO WD NS w Ip - Drain Current -A Q 1 2 3 4 5 6 7 8 Vos Drain to Source Voltage V uPA1526 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE s i 5 4 Circuits on S 3 Circuits ation 2 B Circuits a 1 Circuit @ 3 oS a a Fk ! a 0 25 50 75 100 125 150 Tc - Case Temperature C FORWARD BIAS SAFE OPERATING AREA 10 | a : 70 Os Ipc) S. < 1 2) e | 22s 2 5 oO & gs o 0.1 2 0.01 Te = 25C 1 10 100 Vos Drain to Source Voltage V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT o Vos = 10 V Pulsed a S oa lyts |~ Forward Transfer Admittance - $ a 0.3 0.5 1 3. COS 10 lo Drain Current A Oo LaNEC uPA1526 SOURCE TO DRAIN DIODE CAPACITANCE vs. DRAIN TO FORWARD VOLTAGE SOURCE VOLTAGE 10 1 000 << uw 5 5 g = c 5 f& 100 Oo 3 z 8 s 4 S e uw a @ 05 Oo 10 2 8 5 3 ~ Ves = 0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1 000 Vsp Source to Drain Voltage - V Vos Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE G vs. GATE TO SOURCE VOLTAGE S vs. DRAIN CURRENT g 18 g | Pulsed Ss Pulsed s use a a wy uy oO oO oc ira & 1.0 g b B c Cc o O 0.5 o Qa s lo =0.8A 5 3 0.5 \A a 3 2 WN 2 Ss 1A < @ a a = = 0 zB 0 5 10 15 20 B 0.1 0305 1 3.95 10 in o Ves ~ Gate to Source Voltage V Ip ~ Drain Current-A GATE TO SOURCE CUTOFF VOLTAGE TRANSFER CHARACTERISTICS vs. CHANNEL TEMPERATURE > 10 Vos = 10 V t Vos = 10 V Pulsed 3 lo=1mA & 36 <x 1 2 a 6 5 3 So 04 g 8 8 QO ' 2 2 0.01 2 oO L 0.001 B 0 1 2 3 4 5 6 > 9 20 40 60 80 100 120 140 160 Ves Gate to Source Voltage - V Ten Channel Temperature CNEC uPA1526 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0 20 40 60 80 100 120 140 160 Ten Channe! Temperature C G I 8 Ves = 10V sg Ilb=i1mA 2 1.2 Ww oc @ R 2 08 o 8 o 0.4 & Le c a L Zz. loaNEC uPA1526 Reference Application note name No. Quality control of NEC semiconductors devices. TEI-1202 Quality contro! guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. 1El-1207 Safe operating area of Power MOS FET TEA-1034 Application circuit using Power MOS FET TEB-1035 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industria! robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systerns, Anticrime systems, etc. M4 92.6