S5A, S5B, S5D, S5G, S5J, S5K, S5M
www.vishay.com Vishay General Semiconductor
Revision: 28-Apr-14 1Document Number: 88931
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 5.0 A
VRRM 50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM 100 A
IR10 μA
VF1.15 V
TJ max. 150 °C
Package DO-214AB (SMC)
Diode variations Single die
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL S5A S5B S5D S5G S5J S5K S5M UNIT
Device marking code 5A 5B 5D 5G 5J 5K 5M
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current at TL = 75 °C IF(AV) 5.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 100 A
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
S5A, S5B, S5D, S5G, S5J, S5K, S5M
www.vishay.com Vishay General Semiconductor
Revision: 28-Apr-14 2Document Number: 88931
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Thermal resistance from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad area
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL S5A S5B S5D S5G S5J S5K S5M UNIT
Maximum instantaneous
forward voltage 5.0 A VF1.15 V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C IR
10 μA
TA = 125 °C 250
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 2.5 μs
Typical junction capacitance 4.0 V, 1 MHz CJ40 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL S5A S5B S5D S5G S5J S5K S5M UNIT
Typical thermal resistance (1) RJL 10 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
S5J-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
S5J-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
S5JHE3_A/H (1) 0.211 H 850 7" diameter plastic tape and reel
S5JHE3_A/I (1) 0.211 I 3500 13" diameter plastic tape and reel
025 50 75 100 125 150
Lead Temperature (°C)
6
5
4
3
2
1
0
Average Forward Current (A)
1
100
10 100
10
1000
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
L
= 75 °C
8.3 ms Single Half Sine-Wave
S5A, S5B, S5D, S5G, S5J, S5K, S5M
www.vishay.com Vishay General Semiconductor
Revision: 28-Apr-14 3Document Number: 88931
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
0.2 0.4 0.6 0.81.0 1.2 1.4
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous Reverse Current (µA)
Percent of Rated Peak Reverse Voltage (%)
0 20406080 100
1000
100
10
1
0.1
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Reverse Voltage (V)
Junction Capacitance (pF)
100
10
0.1 1 10 100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
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Revision: 02-Oct-12 1Document Number: 91000
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