S5A, S5B, S5D, S5G, S5J, S5K, S5M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Low forward voltage drop * Low leakage current * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AB (SMC) * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 100 A IR 10 A VF 1.15 V TJ max. 150 C Package DO-214AB (SMC) Diode variations Single die MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ("_X" denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL S5A S5B S5D S5G S5J S5K S5M UNIT 5A 5B 5D 5G 5J 5K 5M Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 75 C IF(AV) 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A TJ, TSTG -55 to +150 C Device marking code Operating junction and storage temperature range Revision: 28-Apr-14 Document Number: 88931 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S5A, S5B, S5D, S5G, S5J, S5K, S5M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 5.0 A SYMBOL S5B S5D VF TA = 25 C Maximum DC reverse current at rated DC blocking voltage S5A S5J S5K S5M 1.15 UNIT V 10 IR TA = 125 C S5G A 250 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.5 s Typical junction capacitance 4.0 V, 1 MHz CJ 40 pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SYMBOL PARAMETER Typical thermal resistance (1) S5A S5B S5D S5G RJL S5J S5K S5M 10 UNIT C/W Note (1) Thermal resistance from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.211 57T 850 7" diameter plastic tape and reel 0.211 9AT 3500 13" diameter plastic tape and reel 0.211 H 850 7" diameter plastic tape and reel 0.211 I 3500 13" diameter plastic tape and reel S5J-E3/57T S5J-E3/9AT S5JHE3_A/H S5JHE3_A/I (1) (1) Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1000 Peak Forward Surge Current (A) Average Forward Current (A) 6 5 4 3 2 1 TL = 75 C 8.3 ms Single Half Sine-Wave 100 10 0 0 25 50 75 100 125 150 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 28-Apr-14 Document Number: 88931 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S5A, S5B, S5D, S5G, S5J, S5K, S5M www.vishay.com Vishay General Semiconductor 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p TJ = 150 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 125 C 1 TJ = 25 C 0.1 Pulse Width = 300 s 1 % Duty Cycle 0.01 0.2 0.4 0.6 0.8 1.0 1.2 10 1.4 0.1 1 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Instantaneous Reverse Current (A) TJ = 150 C 100 TJ = 125 C 1 TJ = 25 C 0.1 0.01 0 20 40 60 80 100 Fig. 5 - Typical Junction Capacitance 1000 10 10 Reverse Voltage (V) 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 28-Apr-14 Document Number: 88931 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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