TrenchT2TM Power MOSFET IXTA260N055T2 IXTP260N055T2 VDSS ID25 = 55V = 260A 3.3m RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 55 V VDGR TJ = 25C to 175C, RGS = 1M 55 V VGSM Transient 20 V ID25 TC = 25C 260 A ILRMS Lead Current Limit, RMS 120 A IDM TC = 25C, Pulse Width Limited by TJM 780 A IA TC = 25C 100 A EAS TC = 25C 600 mJ PD TC = 25C 480 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 260 C C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 G S (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features International Standard Packages 175C Operating Temperature High Current Handling Capability Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25C uUnless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 55 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.0 V 200 nA 5 TJ = 150C VGS = 10V, ID = 50A, Notes 1, 2 (c) 2009 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density A 150 A 3.3 m Applications Automotive Engine Drive Synchronous Buck Converter DC and DC Converters High Current Switching Applications Power Train Management Distributed Power Architecture DS100028A(01/09) IXTA260N055T2 IXTP260N055T2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 94 S 10.8 nF 1460 pF 215 pF 20 ns 27 ns 36 ns 24 ns 140 nC 52 nC 32 nC Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 2 (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.31 C/W RthJC RthCH TO-263 (IXTA) Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 130A, VGS = 0V QRM -di/dt = 100A/s VR = 27V 260 A 1000 A 1.3 V 60 3.4 ns A 102 nC TO-220 (IXTP) Outline Notes: 1. Pulse Test, t 300s; Duty Cycle, d 2%. 2. On Through-Hole Packages, RDS(on) Kelvin Test Contact Location must be 5mm or Less from the Package Body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXTA260N055T2 IXTP260N055T2 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 260 350 VGS = 15V 10V 9V 8V 240 220 200 8V 250 180 160 140 ID - Amperes ID - Amperes VGS = 15V 10V 9V 300 7V 120 100 80 40 150 6V 50 5V 20 7V 100 6V 60 200 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.9 0.4 0.8 1.2 Fig. 3. Output Characteristics @ 150C 3.2 3.6 1.8 180 ID - Amperes 2.8 VGS = 10V 2.0 RDS(on) - Normalized 200 2.4 2.2 VGS = 15V 10V 9V 8V 220 2.0 Fig. 4. RDS(on) Normalized to ID = 130A Value vs. Junction Temperature 260 240 1.6 VDS - Volts VDS - Volts 7V 160 140 120 100 6V 80 60 40 I D = 130A 1.4 1.2 1.0 0.8 5V 20 I D = 260A 1.6 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 130A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.2 140 2.1 External Lead Current Limit TJ = 175C 2.0 120 1.8 100 1.7 ID - Amperes RDS(on) - Normalized 1.9 VGS = 10V 1.6 15V - - - - 1.5 1.4 1.3 1.2 60 40 TJ = 25C 1.1 80 1.0 20 0.9 0.8 0 0 50 100 150 200 ID - Amperes (c) 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXTA260N055T2 IXTP260N055T2 Fig. 8. Transconductance Fig. 7. Input Admittance 200 140 180 TJ = - 40C 120 25C 160 100 g f s - Siemens ID - Amperes 140 120 100 TJ = 150C 25C - 40C 80 60 150C 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 160 180 200 220 Fig. 10. Gate Charge VDS = 28V 9 320 I D = 130A 8 280 I G = 10mA 7 240 VGS - Volts IS - Amperes 120 10 360 200 160 TJ = 150C 120 6 5 4 3 80 TJ = 25C 2 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 RDS(on) Limit f = 1 MHz 25s Ciss 10,000 I D - Amperes Capacitance - PicoFarads 100 ID - Amperes VGS - Volts Coss 1,000 100s 100 External Lead Current Limit 1ms 10 TJ = 175C Crss 10ms 100ms TC = 25C Single Pulse 100 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_260N055T2(V6)12-15-08-B IXTA260N055T2 IXTP260N055T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 32 40 38 RG = 2 36 30 I D = 200A 26 24 I D VDS = 28V 30 28 22 VGS = 10V TJ = 125C VDS = 28V 32 t r - Nanoseconds t r - Nanoseconds 34 RG = 2 31 VGS = 10V = 100A 20 29 28 27 26 18 16 TJ = 25C 25 14 12 24 25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 TJ - Degrees Centigrade 160 TJ = 125C, VGS = 10V 90 55 80 50 80 50 60 40 40 30 20 0 2 4 6 8 tf 10 12 14 45 td(off) - - - - 55 40 45 I D = 200A, 100A 35 30 35 25 30 20 20 25 10 15 25 16 35 45 td(off) - - - - RG = 2, VGS = 10V 65 75 85 95 105 115 20 125 275 60 45 24 40 TJ = 25C 35 240 250 tf td(off) - - - - 225 TJ = 125C, VGS = 10V 220 200 VDS = 28V 200 180 175 160 I D = 100A, 200A 150 140 125 120 100 100 75 80 16 30 50 60 12 25 25 40 8 20 200 0 40 60 80 100 120 140 160 ID - Amperes (c) 2009 IXYS CORPORATION, All Rights Reserved 180 20 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds 28 t d(off) - Nanoseconds 50 TJ = 125C t f - Nanoseconds 55 VDS = 28V 20 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 65 tf 36 40 TJ - Degrees Centigrade 44 40 50 VDS = 28V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f - Nanoseconds 200 60 RG - Ohms 32 180 t d(off) - Nanoseconds 60 t d(on) - Nanoseconds 70 I D = 200A, 100A 100 160 RG = 2, VGS = 10V VDS = 28V 120 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 140 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXTA260N055T2 IXTP260N055T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th)JC - C / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_260N055T2(V6)12-15-08-B