IXTA260N055T2 - Zilog - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS T

J = 25°C to 175°C 55 V

VDGR T

J = 25°C to 175°C, RGS = 1MΩ 55 V

VGSM Transient ± 20 V

ID25 T

C = 25°C 260 A

ILRMS Lead Current Limit, RMS 120 A

IDM T

C = 25°C, Pulse Width Limited by TJM 780 A

IA T

C = 25°C 100 A

EAS T

C = 25°C 600 mJ

PD T

C = 25°C 480 W

TJ -55 ... +175 ° C

TJM 175 ° C

Tstg -55 ... +175 ° C

TL 1.6mm (0.062in.) from Case for 10s 300 ° C

Tsold Plastic Body for 10 Seconds 260 ° C

Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C uUnless Otherwise Specified) Min. Typ. Max.

BVDSS V

GS = 0V, ID = 250μA 55 V

VGS(th) V

DS = VGS, ID = 250μA 2.0 4.0 V

IGSS V

GS = ± 20V, VDS = 0V ±200 nA

IDSS V

DS = VDSS 5 μA

VGS = 0V TJ = 150°C 150 μA

RDS(on) V

GS = 10V, ID = 50A, Notes 1, 2 3.3 mΩ

TrenchT2TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA260N055T2

IXTP260N055T2

VDSS = 55V

ID25 = 260A

RDS(on) ≤≤

≤≤

≤ 3.3m ΩΩ

ΩΩ

Ω

DS100028A(01/09)

G = Gate D = Drain

S = Source TAB = Drain

TO-263 (IXTA)

G S

(TAB)

TO-220 (IXTP)

G D S (TAB)

Features



International Standard Packages



175°C Operating Temperature



High Current Handling Capability



Avalanche Rated



Low RDS(on)

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



Automotive Engine Drive



Synchronous Buck Converter



DC and DC Converters



High Current Switching Applications



Power Train Management



Distributed Power Architecture

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA260N055T2

IXTP260N055T2

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 60A, Note 1 55 94 S

Ciss 10.8 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 1460 pF

Crss 215 pF

td(on) 20 ns

tr 27 ns

td(off) 36 ns

tf 24 ns

Qg(on) 140 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 52 nC

Qgd 32 nC

RthJC 0.31 ° C/W

RthCH TO-220 0.50 ° C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

IS VGS = 0V 260 A

ISM Repetitive, Pulse Width Limited by TJM 1000 A

VSD IF = 100A, VGS = 0V, Note 1 1.3 V

trr 60 ns

IRM 3.4 A

QRM 102 nC

Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

2. On Through-Hole Packages, RDS(on) Kelvin Test Contact

Location must be 5mm or Less from the Package Body.

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 100A

RG = 2Ω (External)

IF = 130A, VGS = 0V

-di/dt = 100A/μs

VR = 27V

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-263 (IXTA) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXTP) Outline

IXTA260N055T2

IXTP260N055T2

Fi g . 6. D r ain C u r ren t vs. Case Temperatur e

0

20

40

60

80

100

120

140

-50 -25 0 25 50 75 100 125 150 175 200

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

Fi g . 1. Ou tp u t C h ar acter i sti cs

@ 25º C

0

20

40

60

80

100

120

140

160

180

200

220

240

260

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

5V

6V

7V

Fi g . 3. Ou tpu t C har acte r i stics

@ 150ºC

0

20

40

60

80

100

120

140

160

180

200

220

240

260

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

7

V

5

V

6

V

Fig. 4. R

DS(on)

Normalized to I

D

= 130A Val u e

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 260A

I

D

= 130A

Fig. 5. R

DS(on)

Normalized to I

D

= 130A Valu e

vs. Drain Current

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

2.1

2.2

0 50 100 150 200 250 300 350

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

- - - -

T

J

= 175ºC

T

J

= 25ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA260N055T2

IXTP260N055T2

IXYS REF: T_260N055T2(V6)12-15-08-B

Fig. 7. Input Adm ittance

0

20

40

60

80

100

120

140

160

180

200

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

0 20 40 60 80 100 120 140 160 180 200 220

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

150ºC

25ºC

Fig. 9. Forward Voltage Drop of

In tri n sic D i od e

0

40

80

120

160

200

240

280

320

360

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 28V

I

D

= 130A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Oper ating Area

1

10

100

1,000

110100

V

DS

- Volts

I

D

- Amperes

T

J

= 175ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

10ms

100ms

R

DS(

on

)

Limit

DC

External Lead Current Limit

IXTA260N055T2

IXTP260N055T2

Fig. 14. Resistive Tu rn-on

Rise Tim e vs. Drain Current

24

25

26

27

28

29

30

31

32

40 60 80 100 120 140 160 180 200

ID - Amperes

t

r

- Nanoseconds

R

G

= 2Ω

V

GS

= 10V

V

DS

= 28V

T

J

= 25ºC

T

J

= 125ºC

Fi g. 1 5. R e si st i ve Tu r n-o n

Switchi ng Times vs. Gate R esi stance

0

20

40

60

80

100

120

140

160

2 4 6 8 10121416

RG - Ohms

t

r

- Nanoseconds

10

20

30

40

50

60

70

80

90

t

d(on)

- Nanoseconds

t r

td(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 28V

I

D

= 200A, 100A

Fi g. 16. Resi sti ve Tu r n -o ff

Swi tch i n g Times vs. Ju n cti o n Temper a tu re

15

20

25

30

35

40

45

50

55

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

f

- Nanoseconds

20

25

30

35

40

45

50

55

60

t

d(off)

- Nanoseconds

t

f

td(off)

- - - -

R

G

= 2Ω, V

GS

= 10V

V

DS

= 28V

I

D

= 200A, 100A

Fi g . 17. Resi sti ve Tu r n -o ff

Switchi n g Times vs. D r ain C ur r en t

8

12

16

20

24

28

32

36

40

44

40 60 80 100 120 140 160 180 200

ID - Amperes

t

f

- Nanoseconds

20

25

30

35

40

45

50

55

60

65

t

d(off)

- Nanoseconds

t

f

td(off)

- - - -

R

G

= 2Ω, V

GS

= 10V

V

DS

= 28V

T

J

= 25ºC

T

J

= 125ºC

Fi g. 13. Resi sti ve Tu r n -o n

Ri se Time vs. Ju n cti on Temperatu r e

12

14

16

18

20

22

24

26

28

30

32

34

36

38

40

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

r

- Nanoseconds

R

G

= 2Ω

V

GS

= 10V

V

DS

= 28V

I

D

= 200A

I

D

= 100A

Fi g . 18. R esi sti ve Tur n -o ff

Switchi n g Times vs. Gate Resistan ce

0

25

50

75

100

125

150

175

200

225

250

275

246810121416

RG - Ohms

t

f

- Nanoseconds

20

40

60

80

100

120

140

160

180

200

220

240

t

d(off)

- Nanoseconds

t

f

td(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 28V

I

D

= 100A, 200A

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA260N055T2

IXTP260N055T2

Fi g . 19. Maxi mum Transi en t Th ermal I mp ed an ce

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXYS REF: T_260N055T2(V6)12-15-08-B