HEWLETT iy, PACKARD COMPONENTS LIGHT EMITTING DIODE 1NG765 MILITARY APPROVED JAN 1N5765 MIL-S-19500 / 467 | JAN TX IN5765 TECHNICAL DATA APRIL 1976 Features DESIGNED FOR HIGH-RELIABILITY APPLICATIONS e HERMETICALLY SEALED LONG LIFE HIGH BRIGHTNESS OVER A WIDE VIEWING ANGLE e 1C COMPATIBLE/LOW POWER CONSUMPTION Description one ( be O61 (02a) 26.2 (1.030) 5 Ee ae PS GOLD PLATED KOVAR 0.4) Hote Pin oar (oa8) - . The 1N5765 is a Galtium Arsenide Phosphide Light Emitting Diode, Solid State Lamp, designed for High Reliability applications. This hermetically sealed LED has been formally approved for use in military systems as a JAN/JAN TX component. HP commercial part number 5082-4420 is equivalent to the 1N5765. Absolute Maximum Ratings at T,=25C Breakdown Voltage ... 2.2... ee ee 4Vde Forward Current (see Note 1] 2.0... ...0.... 00.0002 50mAdc Power Dissipation ........ 00.00.0000 eee ee eee 150mWw Peak Forward Current .......0.0. 00000, 000. cau e eae 3 Amp Operating Temperature Range Storage Temperature Range (1ys Puise Width, 300pps) 65C to +100C 65C to +100C Electrical / Optical Characteristics at T,=25C (Per Table |, Group A Testing of MIL-S 19500/467) AAT 1176} : 482 (.19G}. TINTED PLASTIC Se OVER GLASS LENG 487 BO) e356 (225) | a GLASS/METAL ee Sone HERMETICCAN 0:40:C.016} 8.08 1.200) 6.59 220} CATHODE =" et ne RA i DIMENSIONS IN MELLAMETERS AND. INCHES}. Specification Symbol Min, Max. Units Test Conditions Luminous Intensity (Axial) la 05 3.0 med Ip = 20mAdc, 0: =0 Luminous Intensity (off Axis) ly2 0.3 med p= 20mAdc, 6 = 30 [see Note.2] Wavelength hy 630 700 nM Design Parameter Capcitance Cc 300 pe Ve =Q, f= 1MHz Forward Voltage Ve 2.0 Vde {p= 20mAdc Reverse Current le 1 wAde Va-= 3NVde [see Note-2] NOTES: 1. Derate 0.67 mAdc/C for Ta above 25C. 2. These specifications apply only to JAN/JAN TX levels. 37JAN 1N5765: Samples of each lot are subjected to Group A inspection for parameters listed in Table |, and to Group B and Group C tests listed below. All tests are to the conditions and limits specified by MIL-S-19500/467. A summary of the data gathered in Groups A, B, and C lot acceptance testing is supplied with each shipment. JAN TX 1N5765: Devices undergo 100% screening tests as listed below to the conditions and limits specified by MIL- 5-19500/467. The JAN TX lot is then subjected to Group A, Group B and Group C tests as for the JAN 1N5765 above. A summary of the data gathered in Groups A, B and C acceptance testing is supplied with each shipment. Method Method Group B Sample Acceptance Tests __MIL-STD-750 Group Sample-Acceptance. Tests MIL-STD-750 Physical Dimensians : 2066 Low Temp. Operation (55C) : Breakdown Voltage 4021 Solderability 2026 | Temperature Cycling 1081A Resistance to Solvents " Thermal Shock 1056A _ Femp. Storage (100C, 1K hours) 1031 : | Operating Life (50 mAdc, 1K hours} 4026 Temperature. Cycling / JOS1A a : & Peak Forward Pulse Current Fine Leak Test 1071H 1X Screening (100%) Gross Leak Test : - 1071C - . . ae : | Ternp. Storage (100C; 72 hours) Moisture Resistance 1021 : : : Teraperature Cycling TO51A Mechanical Shock 2016 : . : : Constant Acceleration 2006 Vibration 2066 | Fine Leak Test 4071H Constant Acceleration ; 2006 : : Gross Leak Test 1O71C Terminal Strength 2036E : ee Burn-in (60 mAdec, 168 hours) Salt Atmosphere 4041 : 5 Evaluation of Drift Temp. Storage (100C, 340:hours) G 1032 Bue le) Operating Life (50imAdc, 340-hours) 1027 *MIL-STD-202 Method 215 Typical Characteristic Curves 80 2.50 a srecng restegentn se 2006 eed 40 30 20 100 ee ee - FORWARD CURRENT - ma 50 RELATIVE LUMINOUS INTENSITY 0 0 Da 0 0.4 08 1.2 1.6 2.0 0 10 FORWARD CURRENT VOLTAGE CHARACTERISTICS |. FORWARD CURRENT ma RADIATION PATTERN F Figure 1. Forward Current vs. Figure 2, Luminous Intensity vs. Figure 3. Relative Luminous Intensity Voltage Characteristic. Forward Current (IF). vs. Angular Displacement. 38