2SC2412K / 2SC4081 / 2SC4617 /
Transistors 2SC5658 / 2SC1740S
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S
!Features
1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA1037AK /
2SA1576A / 2SA1774H /
2SA2029 / 2SA933AS.
!
!!
!Structure
Epitaxial planar type
NPN silicon transistor
!
!!
!External dimensions (Units : mm)
ROHM : VMT3
2SC5658
ROHM : SPT
EIAJ : SC-72
2SC1740S
(1) Emitter
(2) Collector
(3) Base
3
±
0.2(15Min.)
4
±
0.2 2
±
0.2
0.45
0.5
0.45
5
(1) (2) (3)
−
0.05
+0.15
+0.15
−
0.05
2.5+0.4
−
0.1
3Min.
* Denotes hFE
2SC2412K 2SC4617
ROHM :
EMT3
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol: B*
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC4081
Abbreviated symbol: B*
Abbreviated symbol: B*
(1) Base
(2) Emitter
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Abbreviated symbol: B*
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
0.8
0.15
0~0.1
0.3Min.
1.1
(2)(1)
2.8
1.6
0.4
(3)
1.9
0.95 0.95
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
(3)
0.9
0.7 0.2
0.65
(2)
2.0
1.3
(1)
0.65
(1) Emitter
(2) Base
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.6
1.0
0.3
0.8
(2)
0.50.5
(3)
0.2
(1)
0~0.1
(3)
0.32
0.8
1.2
0.13 0.5
0.22
0.40.4
1.2
0.80.2
0.15Max.
0.2
(2)
(1)
!
!!
!Absolute maximum (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
60 V
V
V
A
W
°C
°C
50
7
0.15I
C
0.2
0.15
0.3
2SC2412K, 2SC4081
2SC1740S
2SC4617, 2SC5658
150
−55~+150
Symbol Limits Unit
2SC2412K / 2SC4081 / 2SC4617 /
Transistors 2SC5658 / 2SC1740S
!
!!
!Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
−
−
120
−
−
−
−
−
−
−
−
−
−
180
2
−
−
−
0.1
0.1
560
0.4
−
3.5
VI
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CE
=12V, I
E
=0A, f=1MHz
V
V
µA
µA
−
V
MHz
pF
Typ. Max. Unit Conditions
Transition frequency
!
!!
!Packaging specifications and hFE
Package
Code
Taping Bulk
Basic ordering
unit (pieces)
T146 T106
3000 3000
−
−
QRS
hFE
QRS
2SC2412K
2SC4081
−−
TL
3000
−
−
T2L
8000
−
−
−
QRS2SC4617
TP
5000
−
−
−
−−− −
QRS2SC5658
−
−−−
QRS2SC1740S
Type
hFE values are classified as follows :
Item Q R S
h
FE
120~270 180~390 270~560
!
!!
!Electrical characterristic curves
Fig.1 Grounded emitter propagation
characteristics
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
Ta
=
100°C
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
25°C
−55°C
Fig.2 Grounded emitter output
characteristics ( Ι )
0
20
40
60
80
100
0.4 0.8 1.2 1.6 2.00
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25°C
I
B
=0A
0.40mA
0.50mA
0.45mA
0
0
2
8
10
4 8 12 16
4
6
20
I
B
=0A
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
3µA
6µA
9µA
12µA
15µA
18µA
21µA
24µA
27µA
30µA
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
2SC2412K / 2SC4081 / 2SC4617 /
Transistors 2SC5658 / 2SC1740S
0.2
20
10 0.5 1 2 5 10 20 50 100 200
50
100
200
500
VCE=5V
3V
1V
Ta=25°C
Fig.4 DC current gain vs.
collector current ( Ι )
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC
(mA)
0.2 0.5 1 2 5 10 20 50 100 200
20
10
50
100
200
500
25°C
−55°C
Ta=100°CVCE=
5V
Fig.5 DC current gain vs.
collector current ( ΙΙ )
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : IC (mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
IC/IB=50
20
10
Ta=25°C
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
0.2
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : IC (mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
IC/IB=10
Ta=100°C
25°C
−55°C
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : IC (mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100
IC/IB=50
Ta=100°C
25°C
−55°C
Fig.9 Gain bandwidth product vs.
emitter current
50
−0.5 −1−2−5−10 −20 −50 −100
100
200
500
Ta=25°C
VCE=6V
EMITTER CURRENT : IE
(mA)
TRANSITION FREQUENCY : fT
(MHz)
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
0.2 0.5 1 2 5 10 20 50
1
2
5
10
20
Cob
Ta=25°C
f
=
1MHz
I
E
=0A
I
C
=0A
Cib
Fig.11 Base-collector time constant
vs. emitter current
−0.2 −0.5 −1−2−5−10
BASE COLLECTOR TIME CONSTANT : Cc·r
bb' (ps)
EMITTER CURRENT : I
E
(mA)
10
20
50
100
200 Ta=25°C
f=32MH
Z
V
CB
=6V
