BD135
TO-126 NPN Transistors
Page 1 09/05/08 V1.1
Features:
••NPN Plastic Power Transistors.
••Medium Power Linear and Switching Applications.
TO-126 Plastic Package
Dimensions Minimum Maximum
A 7.4 7.8
B 10.5 10.8
C 2.4 2.7
D 0.7 0.9
E2.25 (Typical)
F 0.49 0.75
G4.5 (Typical)
L15.7 (Typical)
M1.27 (Typical)
N3.75 (Typical)
P 3.0 3.2
S2.5 (Typical)
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Collector
3. Base
BD135
TO-126 NPN Transistors
Page 2 09/05/08 V1.1
Absolute Maximum Ratings
- Symbol - BD135 Unit
Collector-Base Voltage (Open Emitter) VCBO
Maximum
45 V
Collector Emitter Voltage (Open Base) VCEO
Collector Current IC1.5 A
Total Power Dissipation upto TC= 25°C Ptot 12.5 W
Junction Temperature Tj150 °C
Collector-Emitter Saturation Voltage
IC= 0.5A, IB= 0.05A VCE (Sat) 0.5 V
DC Current Gain
IC= 0.15A; VCE = 2V hFE Minimum
Maximum
40
250 -
Ratings (at Ta = 25°C unless otherwise specified)
- Symbol - BD135 Unit
Collector-Base Voltage (Open Emitter) VCBO
Maximum
45
VCollector Emitter Voltage (Open Base) VCEO
Emitter-Base Voltage (Open Collector) VEBO 5.0
Collector Current IC1.5
A
Base Current IB0.5
Total Power Dissipation up to TA= 25°C
Derate above 25°C Ptot
1.25
10 W
mW/°C
Total Power Dissipation up to TC= 25°C
Derate above 25°C
12.5
100
Junction Temperature Tj150
°C
Storage Temperature Tstg --65 to +150
Thermal Resistance
From Junction to Case Rth (j-c) - 10
°C/W
From Junction to Ambient Rth (j-a) - 100
BD135
TO-126 NPN Transistors
Page 3 09/05/08 V1.1
** hFE Classification:
IC (av)
Maximum
(A)
VCEO
Maximum
(V)
hFE
Minimum
at IC= 0.15mA
Ptot
at 25°C
(mW)
Plastic
Package Type Part Number
1 45 40 12.5 TO-126 NPN BD135
Characteristics (Tamb = 25°C unless otherwise specified)
- Symbol -BD135 Unit
Collector Cut off Current
IE= 0; VCB = 30V
IE = 0; VCB = 30V; TC= 125°C
ICBO
Maximum
0.1
10
µA
Emitter Cut off Current
IC= 0; VEB = 5V IEBO 10
Breakdown Voltages
IC = 0.03A; IB= 0
IC = 1mA; IE = 0
IE = 1mA; IC = 0
VCEO (Sus)*
VCBO
VEBO
Minimum
45
45
5.0
V
Saturation Voltage
IC= 0.5A; IB= 0.05A VCE (sat)*
Maximum
0.5
Base-Emitter On Voltage
IC= 0.5A; VCE = 2V VBE (on)*1.0
DC Current Gain
IC= 0.15A; VCE = 2V*
IC= 0.15A; VCE = 2V**
IC= 0.15A; VCE = 2V*
hFE*
Minimum
Minimum
Maximum
Minimum
25
40
250
25
-
-6 Minimum 40
Maximum 100
-10 Minimum 63
Maximum 160
-16 Minimum 100
Maximum 250
-25 Minimum 160
Maximum 400
* Pulse Test: Pulse Width = ≤300µs, Duty Cycle ≤2%.
Specifications
For enquiries from all other markets
BD135
TO-126 NPN Transistors
Page <4> 09/05/08 V1.1
Notes:
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export
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