SILICON PLANAR TYPE 1 SS3 0 ] GENERAL PUROPOSE RECTIFIER APPLICATIONS. Unit in mm Low Forward Voltage : Vp=l.3V(Max.) Low Reverse Current : Tr=0.1lnA(Typ.) Small Total Capacitance : Cr=3.0pF(Typ.) Small Package : $C-59 3 ad os} 2S a + oo as | +h MAXIMUM RATINGS (Ta=25C) +) z CHARACTERISTIC SYMBOL RATING UNIT aa t s Maximum(Peak) Reverse Voltage VRM 35 Vv 2 Reverse Voltage VR 30 V 2q 1 we Maximum(Peak) Forward Current IFM 300 mA Ph 2. ANODE q 3. CATHODE Average Forward Current To 100 nA JEDEC Surge Current (1 sec) IFSM 1 A EIAJ 8C-59 Power Dissipation P 150 mi TOSHIBA 1-3G1B Junction Temperature Ti 125 C Weight : 0.013g Storage Temperature Range Tstg -55~125 C ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.] MAX.] UNIT Forward Voltage VP Ip=LOOmA - 1.0 1.3 v Reverse Current IR Vp=30V - 0.1 10 nA Total Capacitance CT Vp=0, f=1MHz ~ 3 6 pF Marking cg 116]1$$307 Ip Vp In YR o =~ & 5 fos a m ms & 7 a 1 ta & cc me a 3 Ei 3 < as = a) Es a Ps eI 5 10 15 20 25 30 35 0.6 0.7 0.8 0.9 1.0 Lt REVERSE VOLTAGE Vp CV) FORWARD VOLTAGE Vp (Vv) Cr VR f = 1MIlz Ta = 25C TOTAL CAPACITANCE Cr (pF) 5 10 15 20 25 30 35 REVERSE VOLTAGE Vp (V) 1162