MCP1653R-E/UN - Microchip Technology

 2004 Microchip Technology Inc. DS21876A-page 1

MMCP1650/51/52/53

Features

• Output Power Capability Over 5 Watts

• Output Voltage Capability From 3.3V to Over

100V

• 750 kHz Gated Oscillator Switching Frequency

• Adaptable Duty Cycle for Battery or Wide-Input,

Voltage-Range Applications

• Input Voltage Range: 2.0V to 5.5V

• Capable of SEPIC and Flyback Topologies

• Shutdown Control with IQ < 0.1 µA (Typical)

• Low Operating Quiescent Current: IQ = 120 µA

• Voltage Feedback Tolerance (0.6%, Typical)

• Popular MSOP-8 Package

• Peak Current Limit Feature

• Two Undervoltage Lockout (UVLO) Options:

- 2.0V or 2.55V

• Operating Temperature Range: -40°C to +125°C

Applications

• High-Power Boost Applications

• High-Voltage Bias Supplies

• White LED Drivers and Flashlights

• Local 3.3V to 5.0V Supplies

• Local 3.3V to 12V Supplies

• Local 5.0V to 12V Supplies

• LCD Bias Supply

Description

The MCP1650/51/52/53 is a 750 kHz gated oscillator

boost controller packaged in an 8 or 10-pin MSOP

package. Developed for high-power, portable applica-

tions, the gated oscillator controller can deliver 5 watts

of power to the load while consuming only 120 µA of

quiescent current at no load. The MCP1650/51/52/53

can operate over a wide input voltage range (2.0V to

5.5V) to accommodate multiple primary-cell and single-

cell Li-Ion battery-powered applications, in addition to

2.8V, 3.3V and 5.0V regulated input voltages.

An internal 750 kHz gated oscillator makes the

MCP1650/51/52/53 ideal for space-limited designs.

The high switching frequency minimizes the size of the

external inductor and capacitor, saving board space

and cost. The internal oscillator operates at two differ-

ent duty cycles depending on the level of the input volt-

age. By changing duty cycle in this fashion, the peak

input current is reduced at high input voltages, reducing

output ripple voltage and electrical stress on power

train components. When the input voltage is low, the

duty cycle changes to a larger value in order to provide

full-power capability at a wide input voltage range

typical of battery-powered, portable applications.

The MCP1650/51/52/53 was designed to drive external

switches directly using internal low-resistance

MOSFETs.

Additional features integrated on the MCP1650/51/52/

53 family include peak input current limit, adjustable

output voltage/current, low battery detection and

power-good indication.

Package Types

10-Pin MSOP

EXT

GND

VIN

SHDN

MCP1650

8-Pin MSOP

GND

LBO

LBI

SHDN

MCP1653

EXT VIN

110

EXT

GND

VIN

SHDN

MCP1652

8-Pin MSOP

EXT

GND

VIN

LBO

LBI

SHDN

MCP1651

8-Pin MSOP

750 kHz Boost Controller

MCP1650/51/52/53

DS21876A-page 2  2004 Microchip Technology Inc.

MCP1650 Block Diagram

ISNS

1.22V

Internal Osc. with

2 fixed Duty Cycles VHIGH

VLOW

VDUTY

VREF

VIN

VHIGH

VLOW

VDUTY

DC = 80% VIN < 3.8V

DC = 56% VIN > 3.8V

VIN

Voltage Feedback

Current Limit

VIN

EXT

Osc.

SHDN

VREF

1.22V

Pulse

Soft-

Start

ON/

OSC. OUT

GND

ON/OFF

Control

MCP1650

Latch

Ref

0.122V

OFF

 2004 Microchip Technology Inc. DS21876A-page 3

MCP1650/51/52/53

MCP1651/2/3 Block Diagram

Vin

EXT

MCP1650/51/52/53

SHDN

GND

Low Battery

Comparator

1.22 Vref

LBI

LBO

Power Good

Comparators

85% of Vref

VIN

115% of Vref

VIN

MCP1651 - Low Battery Detection

MCP1652 - Power Good Indication

MCP1650 - No Features

MCP1651 - Low Battery Detection

MCP1652 - Power Good Indication

MCP1653 - Low Battery Detection and PG

MCP1650

Vref. (1.22V)

MCP1653 - LBI and PG Features

MCP1650/51/52/53

DS21876A-page 4  2004 Microchip Technology Inc.

Timing Diagram

Typical Application Circuits

Latch Truth Table

SRQ

00Qn

011

100

111

Osc

EXT

MCP1650/1/2/3 Timing Diagram

SHDN

VIN 8

MCP1650

GND

Input

Voltage

3.3V ±10%

CIN 10 µF

off on

EXT

Boost

Inductor

3.3 µH

10 µF

Ceramic

90.9 kΩ

VOUT = 12V

IOUT = 0 to 100 mA

10 kΩ

MOSFET/Schottky

Combination Device

RSENSE

0.05Ω

3.3V to 12V 100 mA Boost Converter

NC NC

COUT

 2004 Microchip Technology Inc. DS21876A-page 5

MCP1650/51/52/53

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VIN TO GND........................................................... 6.0V

CS,FB,LBI,LBO,SHDN,PG,EXT............ GND – 0.3V to

VIN + 0.3V

Current at EXT pin ................................................ ±1A

Storage temperature .......................... -65°C to +150°C

Operating Junction Temperature........ -40°C to +125°C

ESD protection on all pins ........................... ≥ 4kV HBM

† Notice: Stresses above those listed under “Maximum Rat-

ings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN =High,

TJ= -40°C to +125°C. Typical values apply for VIN = 3.3V, TA+25°C.

Parameters Sym Min Typ Max Units Conditions

Input Characteristics

Supply Voltage VIN 2.7 — 5.5 V

Undervoltage Lockout

(S Option)

UVLO 2.4 2.55 2.7 V VIN rising edge

Under Voltage Lockout

(R Option)

UVLO 1.85 2.0 2.15 V VIN rising edge

Undervoltage Hysteresis UVLOHYST —117— mV

Shutdown Supply Current ISHD — 0.001 1 µA SHDN = GND

Quiescent Supply Current IQ— 120 220 µA EXT = Open

Soft Start Time TSS — 500 — µs

Feedback Characteristics

Feedback Voltage VFB 1.18 1.22 1.26 V All conditions

Feedback Comparator

Hysteresis

VHYS —1223mV

Feedback Input Bias Current IFBlk -50 — 50 nA VFB < 1.3V

Current Sense Input

Current Sense Threshold ISNS-TH 75 114 155 mV

Delay from Current Sense to

Output

Tdly_ISNS —80— ns

Ext Drive

EXT Driver ON Resistance

(High Side)

RHIGH —818 Ω

EXT Driver ON Resistance

(Low Side)

RLOW —412 Ω

Oscillator Characteristics

Switching Frequency FOSC 650 750 850 kHz

Low Duty Cycle Switch-Over

Voltage

VLowDuty —3.8— VV

IN rising edge

Duty Cycle Switch Voltage

Hysteresis

DCHyst —92— mV

Low Duty Cycle DCLOW 50 56 62 %

High Duty Cycle DCHIGH 72 80 88 %

MCP1650/51/52/53

DS21876A-page 6  2004 Microchip Technology Inc.

TEMPERATURE SPECIFICATIONS

Shutdown Input

Logic High Input VIN-HIGH 50 — — % of VIN

Logic Low Input VIN-Low — — 15 % of VIN

Input Leakage Current ISHDN — 5 100 nA SHDN=VIN

Low Battery Detect (MCP1651/MCP1653 Only)

Low Battery Threshold LBITH 1.18 1.22 1.26 V LBI Input falling (All Conditions)

Low Battery Threshold

Hysteresis

LBITHHYS 95 123 145 mV

Low Battery Input Leakage

Current

ILBI —10— nAV

LBI = 2.5V

Low Battery Output Voltage VLBO — 53 200 mV ILB SINK = 3.2 mA, VLBI = 0V

Low Battery Output Leakage

Current

ILBO —0.01 1 µAV

LBI = 5.5V, VLBO = 5.5V

Time Delay from LBI to LBO TD_LBO —70— µsL

BI Transitions from

LBITH +0.1VtoL

BITH -0.1V

Power Good Output (MCP1652/MCP1653 Only)

Power Good Threshold Low VPGTH-L -20 -15 -10 % Referenced to Feedback Voltage

Power Good Threshold High VPGTH-H +10 +15 +20 % Referenced to Feedback Voltage

Power Good Threshold

Hysteresis

VPGTH-HYS — 5 — % Referenced to Feedback Voltage

(Both Low and High Thresholds)

Power Good Output Voltage VPGOUT — 53 200 mV IPG SINK = 3.2 mA, VFB = 0V

Time Delay from VFB out of

regulation to Power Good

Output transition

TD_PG —85— µsV

FB Transitions from

VFBTH +0.1VtoV

FBTH -0.1V

Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN = High,

TA = -40°C to +125°C. Typical values apply for VIN = 3.3V, TA = +25°C.

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Storage Temperature Range TA-40 — +125 °C

Operating Junction Temperature

Range

TJ-40 — +125 °C Continuous

Thermal Package Resistances

Thermal Resistance, MSOP-8 θJA — 208 — °C/W Single-Layer SEMI G42-88

Board, Natural Convection

Thermal Resistance, MSOP-10 θJA — 113 — °C/W 4-Layer JC51-7 Standard Board,

Natural Convection

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN =High,

TJ= -40°C to +125°C. Typical values apply for VIN = 3.3V, TA+25°C.

Parameters Sym Min Typ Max Units Conditions

 2004 Microchip Technology Inc. DS21876A-page 7

MCP1650/51/52/53

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, VIN = 3.3V, VOUT =12V, C

IN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),

IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.

FIGURE 2-1: Input Quiescent Current vs.

Input Voltage.

FIGURE 2-2: Input Quiescent Current vs.

Ambient Temperature.

FIGURE 2-3: Oscillator Frequency vs.

Input Voltage.

FIGURE 2-4: Oscillator Frequency vs.

Ambient Temperature.

FIGURE 2-5: Duty Cycle Switch-Over

Voltage vs. Ambient Temperature.

FIGURE 2-6: Duty Cycle Switch-Over

Hysteresis Voltage vs. Ambient Temperature.

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

100

125

150

175

200

2 2.5 3 3.5 4 4.5 5 5.5 6

Input Voltage (V)

Input Quiescent Current (µA)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

ILOAD = 0 mA

100

125

150

175

200

-40 -25 -10 5 20 35 50 65 80 95 110 125

Ambient Temperature (°C)

Input Quiescent Current (µA)

VIN = 2.0V

ILOAD = 0 mA

VIN = 5.5V

VIN = 4.1V

VIN = 2.7V

700

720

740

760

780

800

2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6

Input Voltage (V)

Oscillator Frequency (kHz)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

720

740

760

780

800

820

840

-40 -25 -10 5 20 35 50 65 80 95 110 125 140

Ambient Temperature (°C)

Oscillator Frequency (kHz)

VIN = 2.0V

VIN = 5.5V

VIN = 4.1V

VIN = 2.7V

3.75

3.76

3.77

3.78

3.79

3.80

3.81

3.82

3.83

3.84

3.85

-40 -25 -10 5 20 35 50 65 80 95 110 125

Ambient Temperature (°C)

Duty Cycle Switch Over

Voltage (V)

VIN = Rising

90.0

90.5

91.0

91.5

92.0

92.5

93.0

93.5

94.0

-40 -25 -10 5 20 35 50 65 80 95 110 125

Ambient Temperature (°C)

Duty Cycle Switch Voltage

Hysteresis (mV)

MCP1650/51/52/53

DS21876A-page 8  2004 Microchip Technology Inc.

Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),

IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.

FIGURE 2-7: EXT Sink and Source

Current vs. Input Voltage.

FIGURE 2-8: EXT Sink and Source

Current vs. Ambient Temperature.

FIGURE 2-9: EXT Rise and Fall Times vs.

External Capacitance.

FIGURE 2-10: Feedback Voltage vs. Input

Voltage.

FIGURE 2-11: Feedback Voltage

Hysteresis vs. Input Voltage.

FIGURE 2-12: Dynamic Load Response.

0.0

0.2

0.4

0.6

0.8

1.0

2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0

Input Voltage (V)

EXT Sink/Source Current (A)

ISINK

ISOURCE

TA = +25°C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

-40 -25 -10 5 20 35 50 65 80 95 110 125

Ambient Temperature (°C)

EXT Sink/Source Current (A)

ISINK

ISOURCE

VIN = 3.3V

100 150 200 250 300 350 400 450 500

External Capacitance (pF)

EXT Rise / Fall Time (nS)

5VFALL

2.7VRISE

5VRISE

2.7VFALL

1.205

1.210

1.215

1.220

1.225

1.230

22.533.544.555.56

Input Voltage (V)

VFB Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6

Input Voltage (V)

VFB Hysteresis (mV)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

 2004 Microchip Technology Inc. DS21876A-page 9

MCP1650/51/52/53

Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),

IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.

FIGURE 2-13: Dynamic Line Response.

FIGURE 2-14: Power-Up Timing (Input

Voltage).

FIGURE 2-15: Power-Up Timing

(Shutdown).

FIGURE 2-16: Efficiency vs. Input Voltage.

FIGURE 2-17: Efficiency vs. Load Current.

FIGURE 2-18: Output Voltage vs. Input

Voltage (Line Regulation).

2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0

Input Votlage (V)

Efficiency (%)

TA = 25°C

IOUT = 100 mA

10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0

Load Current (mA)

Efficiency (%)

TA = 25°C

VIN = 3.3V

12.10

12.11

12.12

12.13

12.14

12.15

12.16

2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0

Input Voltage (V)

Output Voltage (V)

TA = 25°C

IOUT = 100 mA

MCP1650/51/52/53

DS21876A-page 10  2004 Microchip Technology Inc.

Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),

IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.

FIGURE 2-19: Output Voltage vs. Output

Current (Load Regulation).

FIGURE 2-20: Output Voltage Ripple vs.

Input Voltage.

FIGURE 2-21: LBI Threshold Voltage vs.

Input Voltage.

FIGURE 2-22: LBI Hysteresis Voltage vs.

Input Voltage.

FIGURE 2-23: LBO Output Voltage vs.

LBO Sink Current.

FIGURE 2-24: LBO Output Timing.

12.10

12.11

12.12

12.13

12.14

12.15

12.16

12.17

10 20 30 40 50 60 70 80 90 100

Output Current (mA)

Output Voltage (V)

VIN = 3.3V

TA = +25°C

VIN = 4.3V

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.24

0.26

2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0

Input Voltage (V)

VOUT Ripple PK-PK (V)

IOUT = 100mA

TA = +25°C

1.205

1.210

1.215

1.220

1.225

1.230

22.533.544.555.56

Input Voltage (V)

LBI Threshold Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

120

121

122

123

124

125

126

127

128

129

22.533.544.555.56

Input Votlage (V)

LBI Hysteresis Voltage (mV)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

100

150

200

250

0246810

LBO Sink Current (mA)

LBO Output Voltage (mV)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

 2004 Microchip Technology Inc. DS21876A-page 11

MCP1650/51/52/53

Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),

IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.

FIGURE 2-25: PG Threshold and

Hysteresis Percentage vs. Input Voltage.

FIGURE 2-26: PG Output Voltage vs. Sink

Current.

FIGURE 2-27: PG Timing.

FIGURE 2-28: Current Sense Threshold

vs. Input Voltage.

FIGURE 2-29: VEXT High Output Voltage

vs. Input Voltage.

FIGURE 2-30: VEXT Low Output Voltage

vs. Input Voltage.

-20

-15

-10

-5

2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6

Input Voltage (V)

PG Threshold and Hysteresis

(% of VOUT)

PGTH(HIGH) TA = 25°C

PGTH(LOW)

PGTH(Hysteresis)

100

150

200

250

0246810

PG Output Sink Current (mA)

PG Ouput Voltage (mV)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

104

106

108

110

112

114

116

22.533.544.555.56

Input Voltage (V)

Current Sense Threshold (mV)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

0.0

4.0

8.0

12.0

16.0

20.0

2 2.5 3 3.5 4 4.5 5 5.5 6

Input Voltage (V)

VEXT RON HIGH (Ohms)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

22.533.544.555.56

Input Voltage (V)

VEXT RON Low (Ohms)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

MCP1650/51/52/53

DS21876A-page 12  2004 Microchip Technology Inc.

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

3.1 External Gate Drive (EXT)

EXT is the output pin that drives the external N-channel

MOSFET on and off during boost operation. EXT is

equal to GND for SHDN or UVLO conditions.

3.2 Circuit Ground (GND)

Connect the GND pin to circuit ground. See layout

guidelines for suggested grounding physical layout.

3.3 Current Sense (CS)

Input peak current is sensed on CS through the exter-

nal current sense resistor. When the sensed current is

converted to a voltage, the current sense threshold is

122 mV below VIN typical. If that threshold is exceeded,

the pulse is terminated asynchronously.

3.4 Feedback Input (FB)

Connect output voltage of boost converter through

external resistor divider to the FB pin for voltage

regulation. The nominal voltage that is compared to this

input for pulse termination is 1.22V.

3.5 Shutdown Input (SHDN)

The SHDN input is used to turn the boost converter on

and off. For normal operation, tie this pin high or to VIN.

To turn off the device, tie this pin to low or ground.

3.6 Low Battery Input (LBI)

LBI is the input pin for the low battery comparator.

When the voltage on this pin falls below the nominal

1.22V threshold setting, the LBO (Low Battery Output)

open-drain is active-low.

3.7 Low Battery Output (LBO)

LBO is an active-low, open-drain output capable of

sinking 10 mA when the LBI pin is below the threshold

voltage. LBO is high-impedance during SHDN or UVLO

conditions.

3.8 Power Good (PG)

PG is an active-high, open-drain output capable of

sinking 10 mA when the FB input pin is 15% below its

typical value or more than 15% above its typical value,

indicating that the output voltage is out of regulation.

PG is high impedance during SHDN or UVLO

condition.

3.9 Input Voltage (VIN)

VIN is an input supply pin. Tie 2.7V to 5.5V input power

source.

Pin No.

MCP1650

Pin No.

MCP1651

Pin No.

MCP1652

Pin No.

MCP1653 Symbol Function

1111EXTExternal Gate Drive

2222GNDGround

3333CSCurrent Sense

4444FBFeedback Input

5556SHDN

Shutdown

— 6 — 7 LBI Low Battery Input

—7—8LBO

Low Battery Output

— — 7 9 PG Power Good Output

88810V

IN Input Voltage

 2004 Microchip Technology Inc. DS21876A-page 13

MCP1650/51/52/53

4.0 DETAILED DESCRIPTION

4.1 Device Overview

The MCP1650/51/52/53 is a gated oscillator boost

controller. By adding an external N-channel MOSFET,

schottky diode and boost inductor, high-output power

applications can be achieved. The 750 kHz hysteretic

gated oscillator architecture enables the use of small,

low-cost external components. By using a hysteretic

approach, no compensation components are

necessary for the stability of the regulator output.

Output voltage regulation is accomplished by

comparing the output voltage (sensed through an

external resistor divider) to a reference internal to the

MCP1650/51/52/53. When the sensed output voltage

is below the reference, the EXT pin pulses the external

N-channel MOSFET on and off at the 750 kHz gated

oscillator frequency. Energy is stored in the boost

inductor when the external N-channel MOSFET is on

and is delivered to the load through the external

Schottky diode when the MOSFET is turned off.

Several pulses may be required to deliver enough

energy to pump the output voltage above the upper

hysteretic limit. Once above the hysteretic limit, the

internal oscillator is no longer gated to the EXT pin and

no energy is transferred from input to output.

The peak current in the MOSFET is sensed to limit its

maximum value. As with all boost topology converters,

even though the MOSFET is turned off, there is still a

DC path through the boost inductor and diode to the

load. Additional protection circuity, such as fuses, are

recommended for short circuit protection.

4.2 Input Voltage

The range of input voltage for the MCP1650/51/52/53

family of devices is specified from 2.7V to 5.5V. For the

S-option devices, the undervoltage lockout (UVLO)

feature will turn the boost controller off once the input

voltage falls below 2.55V, typical. For the R-option

devices, the UVLO is set to 2.0V. The R-option devices

are recommended for use when “bootstrapping” the

output voltage back to the input. The input of the

MCP1650/51/52/53 device is supplied by the output

voltage during boost operation. This can be used to

derive output voltages from input voltages that start up

at approximately 2V (2-cell alkaline batteries).

4.3 Fixed Duty Cycle

The MCP1650/51/52/53 family utilizes a unique two-

step maximum duty cycle architecture to minimize input

peak current and improve output ripple voltage for wide

input voltage operating ranges. When the input voltage

is below 3.8V, the duty cycle is typically 80%. For input

voltages above 3.8V, the duty cycle is typically 56%. By

decreasing the duty cycle at higher input voltages, the

input peak current is reduced. For low input voltages, a

longer duty cycle stores more energy during the on-

time of the boost MOSFET. For applications that span

the 3.8V input range, the inductor value should be

selected to meet not only the minimum input voltage at

80% duty cycle, but 3.8V at 56% duty cycle as well.

Refer to Section 5.0 “Application Circuits/Issues”

for more information about selecting inductor values.

4.4 Shutdown Input Operation

The SHDN pin is used to turn the MCP1650/51/52/53

on and off. When the SHDN pin is tied low, the

MCP1650/51/52/53 is off. When tied high, the

MCP1650/51/52/53 will be enabled and begin boost

operation as long as the input voltage is not below the

UVLO threshold.

4.5 Soft-Start Operation

When power is first applied to the MCP1650/51/52/53,

the internal reference initialization is controlled to slow

down the start-up of the boost output voltage.This is

done to reduce high inrush current required from the

source. High inrush currents can cause the source

voltage to drop suddenly and trip the UVLO threshold,

shutting down the converter prior to it reaching steady-

state operation.

4.6 Gated Oscillator Architecture

A 750 kHz internal oscillator is used as the base

frequency of the MCP1650/51/52/53. The oscillator

duty cycle is typically 80% when the input voltage is

below a nominal value of 3.8V, and 56% when the

input voltage is above a nominal value of 3.8V. Two

duty cycles are provided to reduce the peak inductor

current in applications where the input voltage varies

over a wide range. High-peak inductor current results

in undesirable high-output ripple voltages. For

applications that have input voltage that cross this

3.8V boundary, both duty cycle conditions need to be

examined to determine which one has the least

amount of energy storage. Refer to Section 5.0

“Application Circuits/Issues” for more information

about design considerations.

MCP1650/51/52/53

DS21876A-page 14  2004 Microchip Technology Inc.

4.7 FB Pin

The output voltage is fed back through a resistor divider

to the FB pin. It is then compared to an internal 1.22V

reference. When the divided-down output is below the

internal reference, the internal oscillator is gated on

and the EXT pin pulses the external N-channel

MOSFET on and off to transfer energy from the source

to the load at 750 kHz. This will cause the output volt-

age to rise until it is above the 1.22V threshold, thereby

gating the internal oscillator off. Hysteresis is provided

within the comparator and is typically 12 mV. The rate

at which the oscillator is gated on and off is determined

by the input voltage, load current, hysteresis voltage

and inductance. The output ripple voltage will vary

depending on the input voltage, load current,

hysteresis voltage and inductance.

4.8 PWM Latch

The gated oscillator is self-latched to prevent double

and sporadic pulsing. The reset into the latch is asyn-

chronous and can terminate the pulse during the on-

time of the duty cycle. The reset can be accomplished

by the feedback voltage comparator or the current limit

comparator.

4.9 Peak Inductor Current

The external switch peak current is sensed on the CS

pin across an optional external current sense resistor.

If the CS pin falls more than 122 mV (typical) below

VIN, the current limit comparator is set and the pulse is

terminated. This prevents the current from getting too

high and damaging the N-channel MOSFET. In the

event of a short circuit, the switch current will be low

due to the current limit. However, there is a DC path

from the input through the inductor and external diode.

This is true for all boost-derived topologies and addi-

tional protection circuitry is necessary to prevent

catastrophic damage.

4.10 EXT Output Driver

The EXT output pin is designed to directly drive

external N-channel MOSFETs and is capable of

sourcing 400 mA (typical) and sinking 800 mA (typical)

for fast on and off transitions. The top side of the EXT

driver is connected directly to VIN, while the low side of

the driver is tied to GND, providing rail-to-rail drive

capability. Design flexibility is added by connecting an

external resistor in series with the N-channel MOSFET

to control the speed of the turn on and off. By slowing

the transition speed down, there will be less high-

frequency noise. Speeding the transition up produces

higher efficiency.

4.11 Low Battery Detect

The Low-Battery Detect (MCP1651 and MCP1653

only) feature can be used to determine when the LBI

input voltage has fallen below a predetermined

threshold. The low-battery detect comparator

continuously monitors the voltage on the LBI pin. When

the voltage on the LBI pin is above the 1.22V + 123 mV

hysteresis, the LBO pin will be high-impedance (open-

drain). When in the high-impedance state, the leakage

current into the LBO pin is typically less than 0.1 µA. As

the voltage on the LBI pin decreases and is lower than

the 1.22V typical threshold, the LBO pin will transition

to a low state and is capable of sinking up to 10 mA.

123 mV of hysteresis is provided to prevent chattering

of the LBO pin as a result of battery input impedance

and boost input current.

4.12 Power Good Output

The Power Good Output feature (MCP1652 and

MCP1653 only) monitors the divided-down voltage

feedback into the FB pin. When the output voltage falls

more than 15% (typical) below the regulated set point,

the power good (PG) output pin will transition from a

high-impedance state (open-drain) to a low state

capable of sinking 10 mA. If the output voltage rises

more than 15% (typical) above the regulated set point,

the PG output pin will transition from high to low.

4.13 Device Protection

4.13.1 OVERCURRENT LIMIT

The Current Sense (CS) input pin is used to sense the

peak input current of the boost converter. This can be

used to limit how high the peak inductor current can

reach. The current sense feature is optional and can be

bypassed by connecting the VIN input pin to the CS

input pin. Because of the path from input through the

boost inductor and boost diode to output, the boost

topology cannot support a short circuit without

additional circuitry. This is typical of all boost regulators.

 2004 Microchip Technology Inc. DS21876A-page 15

MCP1650/51/52/53

5.0 APPLICATION CIRCUITS/

ISSUES

5.1 Typical Applications

The MCP1650/51/52/53 boost controller can be used in

several different configurations and in many different

applications. For applications that require minimum

space, low cost and high efficiency, the MCP1650/51/

52/53 product family is a good choice. It can be used in

boost, buck-boost, Single-Ended Primary Inductive

Converters (SEPIC), as well as in flyback converter

topologies.

5.1.1 NON-BOOTSTRAP BOOST

APPLICATIONS

Non-bootstrap applications are typically used when the

output voltage is boosted to a voltage that is higher

than the rated voltage of the MCP1650/51/52/53. For

non-bootstrap applications, the input voltage is

connected to the boost inductor through the optional

current sense resistor and the VIN pin of the MCP1650/

51/52/53. For this type of application, the S-option

devices (UVLO at 2.55V, typical) should be used. The

gated oscillator duty cycle will be dependant on the

value of the voltage on VIN. If VIN > 3.8V, the duty cycle

will be 56%. If VIN < 3.8V, the duty cycle will be 80%.

In non-bootstrap applications, output voltages of over

100V can be generated. Even though the MCP1650/

51/52/53 device is not connected to the high boost

output voltage, the drain of the external MOSFET and

reverse voltage of the external Schottky diode are

connected. The output voltage capacitor must also be

rated for the output voltage.

FIGURE 5-1: Typical Non-Bootstrap Application Circuit (MCP1650/51/52/53).

SHDN

VIN 8

MCP1650

GND

Input

Voltage

3.3V ±10%

CIN 10 µF

off on

EXT

Boost

Inductor

3.3 µH

COUT

10 µF

Ceramic

90.9 kΩ

VOUT = 12V

IOUT = 0 to 100 mA

10 kΩ

MOSFET/Schottky

Combination Device

RSENSE

0.05 Ω

3.3V to 12V 100 mA Boost Converter

NC NC

MCP1650/51/52/53

DS21876A-page 16  2004 Microchip Technology Inc.

5.1.2 BOOTSTRAP BOOST

APPLICATIONS

For bootstrap configurations, the higher-regulated

boost output voltage is used to power the MCP1650/

51/52/53. This provides a constant higher voltage used

to drive the external MOSFET. The R-option devices

(UVLO < 2.0V) can be used for applications that need

to start up with the input voltage below 2.7V. For this

type of application, the MCP1650/51/52/53 will start off

of the lower 2.0V input and begin to boost the output up

to its regulated value. As the output rises, so does the

input voltage of the MCP1650/51/52/53. This provides

a solution for 2-cell alkaline inputs for output voltages

that are less than 6V.

FIGURE 5-2: Bootstrap Application Circuit MCP1650/51/52/53.

5.1.3 SEPIC CONVERTER

APPLICATIONS

In many applications, the input voltage can vary above

and below the regulated output voltage. A standard

boost converter cannot be used when the output volt-

age is below the input voltage. In this case, the

MCP1650/51/52/53 can be used as a SEPIC controller.

A SEPIC requires 2 inductors or a single coupled

inductor, in addition to an AC coupling capacitor. As

with the previous boost-converter applications, the

SEPIC converter can be used in either a bootstrap or

non-bootstrap configuration. The SEPIC converter can

be a very popular topology for driving high-power

LEDs. For many LEDs, the forward voltage drop is

approximately 3.6V, which is between the maximum

and minimum voltage range of a single-cell Li-Ion

battery, as well as 3 alkaline or nickel metal batteries.

FIGURE 5-3: SEPIC Converter Application Circuit MCP1650/51/52/53.

SHDN

VIN 8

MCP1652

GND

Input

Voltage

2.8V to 4.2V

Cin

47 µF

off on

EXT

3.3 µH

3.09 kΩ

Vout = 5V

Iout = 1A

1kΩ

Li-Ion Input to 5.0V 1A Regulated Output (Bootstrap) with MCP1652 Power Good Output

NC PG

0.1 µF

10 Ω

Power Good Output

Cout

47 µF

Ceramic

0.1Ω

Shutdown

N-Channel

MOSFET

Schottky Diode

SHDN

VIN 8

MCP1651

GND

Input

Voltage

2.8V to 4.2V

CIN

47 µF

off on

EXT

3.3 µH

2.49 kΩ

IOUT = 1A

1kΩ

Li-Ion Input to 3.6V 3W LED Driver (SEPIC Converter)

NC PG

0.1 µF

10 Ω

Power Good Output

4.7 µF

3.3 µH

0.2 Ω

COUT

47 µF

Ceramic

0.1Ω

LED

Dimming Capability

Schottky Diode

N-Channel

MOSFET

 2004 Microchip Technology Inc. DS21876A-page 17

MCP1650/51/52/53

5.2 Design Considerations

When developing switching power converter circuits,

there are numerous things to consider and the

MCP1650/51/52/53 family is no exception. The gated

oscillator architecture does provide a simple control

approach so that stabilizing the regulator output is an

easier task than that of a fixed-frequency regulator.

The MCP1650/51/52/53 controller utilizes an external

switch and diode allowing for a very wide range of

conversion (high voltage gain and/or high current gain).

There are practical, as well as power-conversion,

topology limitations. The MCP1650/51/52/53 gated

oscillator hysteretic mode converter has similar

limitations, as do fixed-frequency boost converters.

5.2.1 DESIGN EXAMPLE

Setting the output voltage:

By adjusting the external resistor divider, the output

voltage of the boost converter can be set to the desired

value. Due to the RC delay caused by the resistor

divider and the device input capacitance, resistor

values greater than 100 kΩ are not recommended. The

feedback voltage is typically 1.22V.

For this example:

5.2.1.1 Calculations

For gated oscillator hysteretic designs, the switching

frequency is not constant and will gate several pulses

to raise the output voltage. Once the upper hysteresis

threshold is reached, the gated pulses stop and the

output will coast down at a rate determined by the out-

put capacitor and the load. Using the gated oscillator

switching frequency and duty cycle, it is possible to

determine what the maximum boost ratio is for

continuous inductor current operation.

This relationship assumes that the output load current

is significant and the boost converter is operating in

Continuous Inductor Current mode. If the load is very

light or a small boost inductance is used, higher boost

ratio’s can be achieved.

Calculate at minimum VIN:

The ideal maximum output voltage is 14V. The actual

measured result will be less due to the forward voltage

drop in the boost diode, as well as other circuit losses.

For applications where the input voltage is above and

below 3.8V, another point must be checked to deter-

mine the maximum boost ratio. At 3.8V, the duty cycle

changes from 80% to 56% to minimize the peak current

in the inductor.

For this case, VOUTMAX = 8.63V less than the required

12V output specified. The size of the inductor has to

decrease in order to operate the boost regulator in

Discontinuous Inductor Current mode.

Input Voltage = 2.8V to 4.2V

Output Voltage = 12V

Output Current = 100 mA

Oscillator Frequency = 750 kHz

Duty cycle = 80% for VIN < 3.8V

Duty cycle = 56% for VIN > 3.8V

RBOT =10kΩ

VOUT = 12V

VFB = 1.22V

RTOP = 88.4 kΩ

90.9 KΩ was selected as the closest standard value.

RTOP RBOT

VOUT

VFB

-------------





1–





×=

Where:

RTOP = Top Resistor Value

RBOT = Bottom Resistor Value

POUT VOUT IOUT

×=

Where:

POUT = 12V X 100 mA

POUT = 1.2 Watts

PIN POUT Efficiency()⁄=

Where:

PIN = 1.2W/80%

PIN = 1.5 Watts

(80% is a good efficiency estimate)

VOUT

1D–

-------------





VIN

×=

VOUTMAX

10.8–

----------------





2.8×=

VOUTMAX

10.56–

-------------------





3.8×=

MCP1650/51/52/53

DS21876A-page 18  2004 Microchip Technology Inc.

To determine the maximum inductance for

Discontinuous Operating mode, multiply the energy

going into the inductor every switching cycle by the

number of cycles per second (switching frequency).

This number must be greater than the maximum input

power.

The equation for the energy flowing into the inductor is

given below. The input power to the system is equal to

energy times time.

The inductor peak current is calculated using the

equation below:

Using a typical inductance of 3.3 µH, the peak current

in the inductor is calculated below:

At 3.8V and below, the converter can boost to 14V

while operating in the Continuous mode.

For this example, a 3.3 µH inductor is too large, a

2.2 µH inductor is selected.

As the inductance is lowered, the peak current drawn

from the input at all loads is increased. The best choice

of inductance for high boost ratios is the maximum

inductance value necessary while maintaining

discontinuous operation.

For lower boost-ratio applications (3.3V to 5.0V), a

3.3 µH inductor or larger is recommended. In these

cases, the inductor operates in Continuous Current

mode.

5.2.2 MOSFET SELECTION

There are a couple of key consideration’s when

selecting the proper MOSFET for the boost design. A

low RDSON logic-level N-channel MOSFET is

recommended.

5.2.2.1 MOSFET Selection Process.

1. Voltage Rating - The MOSFET drain-to-source

voltage must be rated for a minimum of VOUT +

VFD of the external boost diode. For example, in

the 12V output converter, a MOSFET drain-to-

source voltage rating of 12V + 0.5V is

necessary. Typically, a 20V part can be used for

12V outputs.

2. Logic-Level RDSON - The MOSFET carries

significant current during the boost cycle on

time. During this time, the peak current in the

MOSFET can get quite high. In this example, a

SOT-23 MOSFET was used with the following

ratings:

Selecting MOSFETs with lower RDSON is not always

better or more efficient. Lower RDSON typically results

in higher total gate charge and input capacitance, slow-

ing the transition time of the MOSFET and resulting in

increased switching losses.

5.2.3 DIODE SELECTION

The external boost diode also switches on and off at the

switching frequency and requires very fast turn-on and

turn-off times. For most applications, Schottky diodes

are recommended. The voltage rating of the Schottky

diode must be rated for maximum boost output voltage.

For example, 12V output boost converter, the diode

should be rated for 12V plus margin. A 20V or 30V

Schottky diode is recommended for a 12V output appli-

cation. Schottky diodes also have low forward-drop

characteristics, another desired feature for switching

power supply applications.

FSW = 750 kHz

TON =(1/F

SW * Duty Cycle)

IPK (2.8V) = 905 mA

Energy (2.8V) = 1.35 µ-Joules

Power (2.8V) = 1.01 Watts

IPK (3.8V) = 860 mA

Energy at 3.8V = 1.22 µ-Joules

Power = 0.914 Watts

FSW = 750 kHz

TON =(1/F

SW * Duty Cycle)

IPK (2.8V) = 1.36A

Energy (2.8V) = 2.02 µ-Joules

Power (2.8V) = 1.52 Watts

IPK(3.8V) = 1.29A

Energy at 3.8V = 1.83 µ-Joules

Power = 1.4 Watts

Energy 1

---LI

××=

IPK

VIN

-------- TON

×=

IRLM2502 N-channel MOSFET

VBDS = 20V (Drain Source Breakdown

Voltage)

RDSON = 50 milli-ohms (VGS = 2.5V)

RDSON = 35 milli-ohms (VGS = 5.0V)

QG= Total Gate Charge = 8 nC

VGS = 0.6V to 1.2V (Gate Source Threshold

Voltage)

 2004 Microchip Technology Inc. DS21876A-page 19

MCP1650/51/52/53

5.2.4 INPUT/OUTPUT CAPACITOR

SELECTION

There are no special requirements on the input or

output capacitor. For most applications, ceramic

capacitors or low effective series resistance (ESR) tan-

talum capacitors will provide lower output ripple voltage

than aluminum electrolytic. Care must be taken not to

exceed the manufacturer’s rated voltage or ripple cur-

rent specifications. Low-value capacitors are desired

because of cost and size, but typically result in higher

output ripple voltage.

The input capacitor size is dependant on the source

impedance of the application. The hysteretic

architecture of the MCP1650/51/52/53 boost converter

can draw relatively high input current peaks at certain

line and load conditions. Small input capacitors can

produce a large ripple voltage at the input of the

converter, resulting in unsatisfactory performance.

The output capacitor plays a very important role in the

performance of the hysteretic gated oscillator

converter. In some cases, using ceramic capacitors

can result in higher output ripple voltage. This is a

result of the low ESR that ceramic capacitors exhibit.

As shown in the application schematics, 100 milli-ohms

of ESR in series with the ceramic capacitor will actually

reduce the output ripple voltage and peak input cur-

rents for some applications. The selection of the capac-

itor and ESR will largely determine the output ripple

voltage.

5.2.5 LOW BATTERY DETECTION

For low battery detection, the MCP1651 or MCP1653

device should be used. The low-battery detect feature

compares the low battery input (LBI) pin to the internal

1.22V reference. If the LBI input is below the LBI

threshold voltage, the low battery output (LBO) pin will

sink current (up to 10 mA) through the internal open-

drain MOSFET. If the LBI input voltage is above the LBI

threshold, the LBO output pin will be open or high

impedance.

5.2.6 POWER GOOD OUTPUT

For power good detection, the MCP1652 or MCP1653

device is ideal. The power good feature compares the

voltage on FB pin to the internal reference (±15%). If

the FB pin is more than 15% above or below the power

good threshold, the PG output will sink current through

the internal open-drain MOSFET. If the output of the

regulator is within ±15% of the output voltage, the PG

pin will be open or high-impedance.

5.2.7 EXTERNAL COMPONENT

MANUFACTURES

Inductors:

Sumida®

Corporation

http://www.sumida.com/

Coilcraft®http://www.coilcraft.com

BH Electronics®http://www.bhelectronics.com

Pulse

Engineering®

http://www.pulseeng.com/

Coiltronics®http://www.cooperet.com/

Capacitors

MuRata®http://www.murata.com/

Kemet®http://www.kemet.com/

Taiyo-Yuden http://www.taiyo-yuden.com/

AVX®http://www.avx.com/

MOSFETs and Diodes:

International

Rectifier

http://www.irf.com/

Vishay®/Siliconix http://www.vishay.com/com-

pany/brands/siliconix/

Semiconductor®

http://www.onsemi.com/

Fairchild

Semiconductor®

http://www.fairchildsemi.com/

MCP1650/51/52/53

DS21876A-page 20  2004 Microchip Technology Inc.

6.0 TYPICAL LAYOUT

FIGURE 6-1: MCP1650/51/52/53 Application Schematic.

When designing the physical layout for the MCP1650/

51/52/53, the highest priority should be placing the

boost power train components in order to minimize the

size of the high current paths. It is also important to pro-

vide ground-path separation between the large-signal

power train ground and the small signal feedback path

and feature grounds. In some cases, additional filtering

on the VIN pin is helpful to minimize MCP1650/51/52/53

input noise.

In this layout example, the critical power train paths are

from input to output, +VIN_1 to F1 to C2 to L1 to Q1 to

GND. Current will flow in this path when the switch (Q1)

is turned on. When Q1 is turned off, the path for current

flow will quickly change to +VIN_1 to F1 to L1 to D1 to

C1 to R4 to GND. When starting the layout for this appli-

cation, both of these power train paths should be as

short as possible. The C2, Q1 and R4 GND connections

should all be connected to a single “Power Ground”

plane to minimize any wiring inductance.

Bold traces are used to represent high-current

connections and should be made as wide as is

practical.

R1 and C3 is an optional filter that reduces the

switching noise on the VIN pin of the MCP1650/51/52/

53. This should be considered for high-power

applications (> 1W) and bootstrap applications where

VIN of the MCP1650/51/52/53 is supplied by the output

voltage of the boost regulator.

The feedback resistor divider that sets the output

voltage should be considered sensitive and be routed

away from the power-switching components discussed

previously.

As shown in the diagram, R6, R8 and the GND pin of

the MCP1650/51/52/53 should be returned to an

analog ground plane.

The analog ground plane and power ground plane

should be connected at a single point close to the input

capacitor (C2).

Single-Cell Li-Ion

Input (2.8V to 4.8V)

+5V Output @ 1A

Low Input

Coilcraft®

DO1813HC

PGND

AGND

0.1µ

47µ

TP1

TP2

OUT

TP4

GND R5

73.2K

49.9K

AGND

3.3 µH B330ADIC

3.09K

562

MCP1651_MSOP

LED

MCP1651R

(+2.8V to +4.8V Input to +5V Output @ 1A)

2A Power Train Path

IRLML2502

/SHDN

LBI

GND

EXT

/LBO

49.9K

Keep Awa

From Switchin

Section

TP5

/SHDN1

0.1

TP3

GND

47µ

FUSE

100

 2004 Microchip Technology Inc. DS21876A-page 21

MCP1650/51/52/53

Figure 6-2 represents the top wiring for the MCP1650/

51/52/53 application shown.

As shown in Figure 6-2, the high-current wiring is short

and wide. In this example, a 1 oz. copper layer is used

for both the top and bottom layers. The ground plane

connected to C2 and R4 are connected through the

vias (holes) connecting the top and bottom layer. The

feedback signal (from TP2) is wired from the output of

the regulator around the high current switching section

to the feedback voltage divider and to the FB pin of the

MCP1650/51/52/53.

FIGURE 6-2: Top Layer Wiring.

Figure 6-3 represents the bottom wiring for the

MCP1650/51/52/53 application shown.

Silk-screen reference designator labels are transparent

from the top of the board. The analog ground plane and

power ground plane are connected near the ground

connection of the input capacitor (C2). This prevents

high-power, ground-circulating currents from flowing

through the analog ground plane.

FIGURE 6-3: Bottom Layer Wiring.

MCP1650/51/52/53

DS21876A-page 22  2004 Microchip Technology Inc.

7.0 PACKAGING INFORMATION

7.1 Package Marking Information

Legend: XX...X Customer specific information*

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanumeric traceability code

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line thus limiting the number of available characters

for customer specific information.

*Standard marking consists of Microchip part number, year code, week code, and traceability code.

8-Lead MSOP (MCP1650, MCP1651, MCP1652)Example:

XXXXX

YWWNNN

1650SE

0448256

10-Lead MSOP (MCP1653)Example:

XXXXX

YYWWNNN

1653SE

0448256

 2004 Microchip Technology Inc. DS21876A-page 23

MCP1650/51/52/53

8-Lead Plastic Micro Small Outline Package (UA) (MSOP)

(F)

n 1

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not

.037 REFFFootprint (Reference)

exceed .010" (0.254mm) per side.

Notes:

Drawing No. C04-111

*Controlling Parameter

Mold Draft Angle Top

Mold Draft Angle Bottom

Foot Angle

Lead Width

Lead Thickness

.003

.009

.006

.012

Dimension Limits

Overall Height

Molded Package Thickness

Molded Package Width

Overall Length

Foot Length

Standoff

Overall Width

Number of Pins

Pitch

.016 .024

.118 BSC

.000

.030

.193 TYP.

.033

MIN

Units

.026 BSC

NOM

INCHES

0.95 REF

.009

.016

0.08

0.22

0°

0.23

0.40

8°

MILLIMETERS*

0.65 BSC

0.85

3.00 BSC

0.60

4.90 BSC

.043

.031

.037

.006

0.40

0.00

0.75

MIN

MAX NOM

1.10

0.80

0.15

0.95

MAX

15°5° -

JEDEC Equivalent: MO-187

0° - 8°

5°

5° -

15°

MCP1650/51/52/53

DS21876A-page 24  2004 Microchip Technology Inc.

10-Lead Plastic Micro Small Outline Package (UN) (MSOP)

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not

.037 REFFFootprint

exceed .010" (0.254mm) per side.

Notes:

Drawing No. C04-021

*Controlling Parameter

Mold Draft Angle Top

Mold Draft Angle Bottom

Foot Angle

Lead Width

Lead Thickness

.003

.006

.009

Dimension Limits

Overall Height

Molded Package Thickness

Molded Package Width

Overall Length

Foot Length

Standoff

Overall Width

Number of Pins

Pitch

.016 .024

.118 BSC

.000

.030

.193 BSC

.033

MIN

Units

.020 TYP

NOM

INCHES

0.95 REF

0.23

.009

.012

0.08

0.15

0.23

0.30

MILLIMETERS*

0.50 TYP.

0.85

3.00 BSC

0.60

4.90 BSC

.043

.031

.037

.006

0.40

0.00

0.75

MINMAX NOM

1.10

0.80

0.15

0.95

MAX

5° 15°

0° - 8°

5° -

15°

JEDEC Equivalent: MO-187

8°0°

(F)

 2004 Microchip Technology Inc. DS21876A-page 25

MCP1650/51/52/53

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Sales and Support

Device MCP1650: 750 kHz Boost Controller

MCP1651: 750 kHz Boost Controller

MCP1652: 750 kHz Boost Controller

MCP1653: 750 kHz Boost Controller

UVLO Options R = 2.0V

S = 2.55V

Temperature Range E = -40°C to +125°C

Package MS = Plastic Micro Small Outline (MSOP), 8-lead

UN = Plastic Micro Small Outline (MSOP), 10-lead

PART NO. XXX

PackageTemperature

Range

Device

UVLO

Options

Examples:

a) MCP1650R-E/MS: 2.0V Option

b) MCP1650RT-E/MS: 2.0V Option,

Tape and Reel

c) MCP1650S-E/MS: 2.55V Option

d) MCP1650ST-E/MS: 2.55V Option,

Tape and Reel

a) MCP1651R-E/MS: 2.0V Option

b) MCP1651RT-E/MS: 2.0V Option,

Tape and Reel

c) MCP1651S-E/MS: 2.55V Option

d) MCP1651ST-E/MS: 2.55V Option,

Tape and Reel

a) MCP1652R-E/MS: 2.0V Option

b) MCP1652RT-E/MS: 2.0V Option,

Tape and Reel

c) MCP1652S-E/MS: 2.55V Option

d) MCP1652ST-E/MS: 2.55V Option,

Tape and Reel

a) MCP1653R-E/UN: 2.0V Option

b) MCP1653RT-E/UN: 2.0V Option,

Tape and Reel

c) MCP1653S-E/UN: 2.55V Option

d) MCP1653ST-E/UN: 2.55V Option,

Tape and Reel

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and

recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

Customer Notification System

MCP1650/51/52/53

DS21876A-page 26  2004 Microchip Technology Inc.

NOTES:

 2004 Microchip Technology Inc. DS21876A-page 27

Information contained in this publication regarding device

applications and the like is intended through suggestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microchip Technology Incorporated with respect

to the accuracy or use of such information, or infringement of

patents or other intellectual property rights arising from such

use or otherwise. Use of Microchip’s products as critical

components in life support systems is not authorized except

with express written approval by Microchip. No licenses are

conveyed, implicitly or otherwise, under any intellectual

property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, MPLAB, PIC, PICmicro, PICSTART,

PRO MATE, PowerSmart and rfPIC are registered

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

AmpLab, FilterLab, microID, MXDEV, MXLAB, PICMASTER,

SEEVAL, SmartShunt and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Application Maestro, dsPICDEM, dsPICDEM.net,

dsPICworks, ECAN, ECONOMONITOR, FanSense,

FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,

ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK,

MPSIM, PICkit, PICDEM, PICDEM.net, PICtail, PowerCal,

PowerInfo, PowerMate, PowerTool, rfLAB, Select Mode,

SmartSensor, SmartTel and Total Endurance are trademarks

of Microchip Technology Incorporated in the U.S.A. and other

countries.

Serialized Quick Turn Programming (SQTP) is a service mark

of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:2002 quality system certification for

its worldwide headquarters, design and wafer fabrication facilities in

Chandler and Tempe, Arizona and Mountain View, California in October

2003. The Company’s quality system processes and procedures are for

its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial

EEPROMs, microperipherals, nonvolatile memory and analog

products. In addition, Microchip’s quality system for the design and

manufacture of development systems is ISO 9001:2000 certified.

DS21876A-page 28  2004 Microchip Technology Inc.

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02/17/04

WORLDWIDE SALES AND SERVICE