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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com1
March 2013
FDP20N50F / FDPF20N50FT
N-Channel UniFETTM FRFET® MOSFET
500 V, 20 A, 260 m
Features
•R
DS(on) = 210 m (Typ.) @ VGS = 10 V, ID = 10 A
• Low Gate Charge (Typ. 50 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Aested
• Improve dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
D
G
S
TO-220F
S
D
G
S
D
G
TO-220
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Thermal Characteristics
Symbol Parameter FDP20N50F FDPF20N50FT Unit
VDSS Drain to Source Voltage 500 V
VGSS Gate to Source Voltage ±30 V
IDD r a i n C u r r e n t - Continuous (TC = 25oC) 20 20* A
- Continuous (TC = 100oC) 12.9 12.9*
IDM D r a i n C u r r e n t - P u l s e d (Note 1) 80 80* A
EAS Single Pulsed Avalanche Energy (Note 2) 1110 mJ
IAR Avalanche Current (Note 1) 20 A
EAR Repetitive Avalanche Energy (Note 1) 25 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
PDPower Dissipation (TC = 25oC) 250 38.5 W
- Derate above 25oC2.00.3W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FDP20N50F FDPF20N50FT Unit
RJC Thermal Resistance, Junction to Case, Max. 0.5 3.3
oC/WRCS Thermal Resistance, Case to Sink, Typ. 0.5 -
RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5
*Drain current limited by maximum junction temperature
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDP20N50F FDP20N50F TO-220 - - 50
FDPF20N50FT FDPF20N50FT TO-220F - - 50
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TJ = 25oC 500 - - V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 250A, Referenced to 25oC-0.7-V/
oC
IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 A
VDS = 400V, TC = 125oC - - 100
IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 10A - 0.22 0.26
gFS Forward Transconductance VDS = 20V, ID = 10A - 25 - S
Ciss Input Capacitance VDS = 25V, VGS = 0V
f = 1MHz
- 2550 3390 pF
Coss Output Capacitance - 350 465 pF
Crss Reverse Transfer Capacitance - 27 40 pF
Qg(tot) Total Gate Charge at 10V
VDS = 400V, ID = 20A
VGS = 10V
(Note 4)
-5065nC
Qgs Gate to Source Gate Charge - 14 - nC
Qgd Gate to Drain “Miller” Charge - 20 - nC
td(on) Turn-On Delay Time
VDD = 250V, ID = 20A
RG = 25
(Note 4)
- 45 100 ns
trTurn-On Rise Time - 120 250 ns
td(off) Turn-Off Delay Time - 100 210 ns
tfTurn-Off Fall Time - 60 130 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 20 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 80 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 20A - - 1.5 V
trr Reverse Recovery Time VGS = 0V, ISD = 20A
dIF/dt = 100A/s
- 154 - ns
Qrr Reverse Recovery Charge - 0.5 - C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5mH, IAS = 20A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 20A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10
1
10
20
0.3
*Notes:
1. 250s Pulse Test
2. TC = 25oC
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
ID,Drain Current[A]
VDS,Drain-Source Voltage[V]
80
45678
1
10
100
150oC
*Notes:
1. VDS = 20V
2. 250s Pulse Test
25oC
ID,Drain Current[A]
VGS,Gate-Source Voltage[V]
0.0 0.5 1.0 1.5 2.0 2.5
1
10
100
*Notes:
1. VGS = 0V
2. 250s Pulse Test
150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
400
0255075
0.1
0.2
0.3
0.4
0.5
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
RDS(ON) [],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10
0
1500
3000
4500
6000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
50
0 102030405060
0
2
4
6
8
10
*Note: ID = 20A
VDS = 100V
VDS = 250V
VDS = 400V
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Area
vs. Temperature - FDP20N50F
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
- FDPF20N50FT vs. Case Temperature
Figure 11. Transient Thermal Response Curve - FDP20N50F
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. VGS = 0V
2. ID = 1mA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [
oC]
110100
0.01
0.1
1
10
100
200
800
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
100 ms
1 ms
10 s
DC
10 ms
100 s
Operation in This Area
is Limited by R DS(on)
25 50 75 100 125 150
0
5
10
15
20
25
ID, Drain Current [A]
TC, Case Temperature [
oC]
110100
0.01
0.1
1
10
100
200
40s
100s
1ms
10ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
800
DC
10-5 10-4 10-3 10-2 10-1 100101
0.01
0.1
1
0.002
t
1
P
DM
t
2
Thermal Response [ZJC]
Rectangular Pulse Duration [sec]
*Notes:
1. ZJC(t) = 0.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
single pulse
0.5
0.02
0.2
0.05
0.1
0.01
t
1
P
DM
t
2
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF20N50FT
10-4 10-3 10-2 10-1 100101102103
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02 *Notes:
1. ZJC(t) = 3.3oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.5
Single pulse
Thermal Response [ZJC]
Rectangular Pulse Duration [sec]
5
t
1
P
DM
t
2
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
7
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
8
Mechanical Dimensions
TO-220B03
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
9
Mechanical Dimensions
Dimensions in Millimeters
TO-220M03
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
10
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
2Cool™
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
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and Better™
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MicroPak2™
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OPTOLOGIC®
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PowerTrench®
PowerXS™
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QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identification Product Status Definition
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I64
tm
®
www.onsemi.com
1
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