2SC2412K
NPN Silicon
Epitaxial Transistors
Features
• Power Dissipation: 0.2W (TA=25к)
• Collector Current: 0.15A
•
Collector-base Voltage: 60V
Maximum Ratings
Symbol
Rating Rating Unit
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 7.0 V
IC Collector Current 0.15 A
PC Collector power dissipation 0.2 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter Min Typ Max
Units
OFF CHARACTERISTICS
VCEO Collector-Emitter Voltage
(IC=1.0mAdc, IB=0) 50 --- --- Vdc
VCBO Collector-Base Voltage
(IC=50uAdc, IE=0) 60 --- --- Vdc
VEBO Emitter-Base Voltage
(IE=50uAdc, IC=0) 7.0 --- --- Vdc
ICBO Collector Cutoff Current
(VCB=60Vdc,IE=0) --- --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=7.0Vdc, IC=0) --- --- 0.1 uAdc
ON CHARACTERISTICS
hFE DC Current Gain
(IC=1.0mAdc, VCE=6.0Vdc) 120 ---
560
---
VCE(sat) Collector Saturation Voltage
(IC=50mAdc, IB=5.0mAdc) --- --- 0.4
Vdc
fT Transition Frequency
(VCE=12Vdc, IC=2.0mAdc,
f=100MHz)
150
--- --- MHz
CLASSIFICATION OF hFE
Rank Q R S
Range 120-270 180-390 270-560
Marking BQ BR BS
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 2 2006/05/14
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .113 .117 2.87 2.97
B .108 .112 2.75 2.85
C .061 .065 1.55 1.65
D .036 .038 .925 .975
E .073 .077 1.85 1.95
G .0016 .0039 .04 .100
H .044 .049 1.12 1.25
J .006 .007 .14 .17
K .013 .015 .34 .37
A
B
C
D
E
G
H
J
K
Suggested Solder
Pad Layout
.087
2.200
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
DIMENSIONS
SOT-23-3L
TM
Micro Commercial Components
E
B
C
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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MCC
Revision: 2 2006/05/14
TM
Micro Commercial Components
www.mccsemi.com
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products are represented on our website, harmless against all damages.
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. reserves the right to make changes without further notice to any
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