KBP200 - KBP2010 W TE PO WE R SEM IC O ND UC TO R S 2.0A BRIDGE RECTIFIER Features ! Diffused Junction ! ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards UL Recognized File # E157705 L A B J + ~ ~ - C K Mechanical Data ! ! ! ! ! ! Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Weight: 1.7 grams (approx.) Mounting Position: Any Marking: Type Number H I E G D Maximum Ratings and Electrical Characteristics KBP Dim Min Max A 14.22 15.24 B 10.67 11.68 C 15.2 -- D 4.57 5.08 E 3.60 4.10 G 2.16 2.67 H 0.76 0.86 I 1.52 -- J 11.68 12.7 K 12.7 -- L 3.2 x 45 Typical All Dimensions in mm @TA=25C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) Symbol KBP 200 KBP 201 KBP 202 KBP 204 KBP 206 KBP 208 KBP 2010 Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A Forward Voltage (per element) @IF = 2.0A VFM 1.1 V Peak Reverse Current At Rated DC Blocking Voltage @TA = 25C @TA = 100C IRM 10 500 A Rating for Fusing (t<8.3ms) I2t 15 A2s Typical Junction Capacitance per element (Note 2) Cj 25 pF RJA 30 K/W Tj, TSTG -55 to +165 C @TA = 50C Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad. KBP200 - KBP2010 1 of 2 (c) 2000 Won-Top Electronics IF, INSTANTANEOUS FWD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 2.0 1.5 1.0 0.5 TJ = 150C TJ = 25C 1.0 0.1 Pulse Width = 300 s 0 0 0 75 150 0 225 0.2 0.4 0.6 0.8 1.0 1.2 T, TEMPERATURE (C) VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 1 Forward Current Derating Curve Fig. 2 Typical Fwd Characteristics 100 100 Tj = 150c Single Half Sine Wave (JEDEC Method) 80 Cj, JUNCTION CAPACITANCE (pF) IFSM , PEAK FWD SURGE CURRENT (A) 10 60 40 20 1.4 Tj = 25C f = 1MHz 10 1 0 1 10 1 100 10 100 VR, REVERSE VOLTAGE (V) Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Fig. 4 Typical Junction Capacitance IR, INSTANTANEOUS REVERSE CURRENT (mA) NUMBER OF CYCLES AT 60 Hz 10,000 1000 Tj = 150C 100 Tj = 125C Tj = 100C 10 1.0 Tj = 25C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics KBP200 - KBP2010 2 of 2 (c) 2000 Won-Top Electronics