KBP200 – KBP2010 1 of 2 © 2000 Won-Top Electronics
KBP200 – KBP2010
2.0A BRIDGE RECTIFIER
Features
! Diffused Junction
! Low Forward Voltage Drop L A
! High Current Capability
! High Reliability
! High Surge Current Capability B J
! Ideal for Printed Circuit Boards + ~ ~ -
! UL Recognized File # E157705
C K
Mechanical Data
! Case: Molded Plastic H I
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 E
! Polarity: As Marked on Body G
! Weight: 1.7 grams (approx.) D
! Mounting Position: Any
! Marking: Ty pe Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derat e current by 20%.
Characteristic Symbol KBP
200 KBP
201 KBP
202 KBP
204 KBP
206 KBP
208 KBP
2010 Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current
(Note 1) @T
A = 50°C IO2.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 60 A
Forward Voltage (per element) @IF = 2.0A VFM 1.1 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 10
500 µA
Rating for Fusing (t<8.3ms) I2t15 A2s
Typical Junction Capacitance per element (Note 2) Cj25 pF
Typical Thermal Resistance (Note 3) RJA 30 K/W
Operating and Storage Temperat ure Range Tj, TSTG -55 to +165 °C
Note: 1. Leads maintained at ambient temperat ure at a distanc e of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse volt age of 4.0V D.C.
3. Thermal resistance junct i on to ambient mounted on PC board with 12mm2 copper pad.
WTE
PO WER SEM IC OND UCTOR S
KBP
Dim Min Max
A14.22 15.24
B10.67 11.68
C15.2 —
D4.57 5.08
E3.60 4.10
G2.16 2.67
H0.76 0.86
I1.52 —
J11.68 12.7
K12.7 —
L3.2 x 45° Typical
All Dimensions in mm
0
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I , INSTANTANEOUS FWD CURRENT (A)
F
V , INSTANTANEOUS FWD VOLTAGE(V)
Fig. 2 Typical Fwd Characteristics
F
T = 150°C
J
T = 25°C
J
Pulse Width
= 300 µs
0
80
20
60
40
100
1 10 100
I , PEAK FWD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fi
g
. 3 Max Non-Repetitive Peak Fwd Sur
g
e Current
T = 150°c
Single Half
Sine Wave
(JEDEC Method)
j
1
10
100
110100
C, JUNCTION CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25°C
f = 1MHz
j
0.01
0.1
1.0
10
100
1000
10,000
0 20 40 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
g
. 5 Typical Reverse Characteristics
T = 125°C
j
T = 100°C
j
T = 25°C
j
T = 150°C
j
0
0.5
1.0
1.5
2.0
0 75 150 225
I , AVERAGE RECTIFIED CURRENT (A)
O
T, TEMPERATURE (°C)
Fi
g
. 1 Forward Current Deratin
g
Curve
KBP200 – KBP2010 2 of 2 © 2000 Won-Top Electronics
