g FERRANTI semiconductors], BAS16 High Speed Switching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid circuits in both industrial and commercial applications. The Ferranti SOT-23 package is formed by transfer moulding a SILICONE plastic specially selected to provide a rugged one @ piece encapsulation resistant to severe environments. SOT-23 Actual size in inset ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Continuous Reverse Voltage Ve 75 Volts Repetitive Peak Reverse Voltage Varm 85 Volts Repetitive Peak Forward Current term 250 mA Power Dissipation (at Tamb = 25C)* Prot 200 mw Operating and Storage Temperature Range 65 to +175 C *Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 10x 8x 0.6mmBAS16 CHARACTERISTICS (at 25C ambient temperature unless otherwise stated). Parameter Symbol Maximum Unit Conditions Forward voltage Ve 715 mV lp=1mA 855 mV |p=10mA 1000 mV Ip =50mA 1250 mV Ip =150mA Reverse current IR vA Vp = 28V, T)= 150C 30 1 uA Vp_=75V 50 pA Va =75V, T)= 150C Diode capacitance Cy 2 pF Va =0, f= 1MHz Forward recovery voltage Vir 1.75 Vv Switched to le=10mA, t,=20ns See figure 1 Reverse recovery time tr 6 ns \p=10mMA, Iam = 10MA l= 1mA, Ry = 1002 See figure 2 DERATING CURVE Prot (mW) 75 -50 25 0 25 50 vie) 100 125 180-975 AMBIENT TEMPERATURE (C) BAS 16, Page 2BAS16 SWITCHING TIME TEST DATA 0:2yF out PULSE tk RIN=50 | SAMPLING GENERATOR a C <1-0pF JOSCILLOSCOPE Ve $732 Fig. 1 Pulse rise time <0.6ns Pulse duration = 100ns Oscilloscope rise time <0.35ns i Adjust Vg for lr =10mA ' Nigel ' ' ter $733 OUTPUT WAVEFORM PARAMETER MEASUREMENT INFORMATION inpur & a Dut. re o- " | f CONDITION 1 Vine ++ | hs ~~ ey | CONDITION 1: Adjust Vy for Ips 1OmA CONDITION 2: Adjust Vin O-pF ADJUST FOR | Ip =10mA | it 4 for Vp = 6V | se tre INPUT VOLTAGE WAVEFORM TEST CIRCUIT OLTPUT CURRENT WAVEFORMS Fig. 2 REVERSE RECOVERY TIME NOTE 1: The input pulse is supplied by a generator with the following characteristics: Zout = 50, t,<0.5ns, tw= 100ns. NOTE 2: Output waveforms are monitored on an oscilloscope with the following characteristics: t,<0.6ns, Zin =50Q. BAS16, Page 3BAS16 PACKAGE OUTLINE PIN CONFIGURATION 2,8 max 1 = | 095 04 =-}}1 -]]- 2,9 max t 095 3 1.4 max 1,2 max ae Lay * 3 6175 4759/6 Q05 min Devices are identified by an identification code stamped on the body of the device as follows: BAS16 .. .... ~ SAB BAS16, Page 4SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Device Device Device Type marking Type marking BAL99 E2 BZX84-C43 x6 BARSS ES BZX84-C47 x7 BASI6 AS FMMD914 5D BA A v70 4 FMMD6050 5A BAV74 JA HD2A 5D BAVS9 AT BAWS56 Al HD3A 4D BZX84-C2V7 w4 HD4A 7D BZX84-C3V0 W5 ZC830 Jt BZX84-C3V3 Ww6 ZC830A BZX84-C3V6 w7 ZC830B _ BZX84-C3V9 Ws 2C831 3 BZX84-C4V3 w9 2C831A _ BZX84-C4V7 z1 ZC831B ~ BZX84-C5V1 22 BZX84-C5V6 23 2C832 J4 BZX84-C6V2 z4 ZC831A - BZX84-C6V8 Z5 ZC832B _ BZX84-C7V5 Z6 ZC833 A2 BZX84-C8V2 zZ7 ZC833A J2 BZX84-C9V1 ZB 208338 _ BZX84-C10 z9 2c834 5 BZX84-C11 Y1 ZC834A BZX84-C12 y2 BZX84-C13 3 2CB4B - BZX84-C15 Y4 20835 J6 BZX84-C16 Y5 ZC835A - BZX84-C18 Y6 ZC835B - BZX84-C20 Y7 ZC836 J7 BZX84-C22 8 ZCB36A _ BZX84-C24 y9 ZC836B _ BZX84-C27 x1 ZC2800E E6 BZX84-C30 x2 BZX84-C33 x3 ZC2810E E7 BZX84-C36 x4 ZC2811E E8 BZX84-C39 X5 ZC5800E EQ H3SOT-23 TRANSISTORS & DIODES SELECTION GUIDE SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings ter Max. Ve Type Description VR Ir max. at lF=mA Volts mA ns 10 | 50 | 100 BAS16 Single diode 75 100 6 0.855/1.0/ FMMD914 Single diode 75 75 4/8 10 /-/- HD3A Single diode 75 100 6 10 /-/- BAL99 Single diode 70 100 6 0.855/1.1/1.3 BARS9 Single diode 70 100 6 0.855/1.1/1.3 FMMD6050 Single diode 70 100 6 - /-/141 BAV70 Dual diode with common cathode 70 100 6 0.855/1.1/1.3 BAV74 Dual diode with common cathode 50 150 4 ~ /-/1.0 HD2A Dual diode with common cathode 75 100 6 10 /-/- BAVS9 Dual diode with series connection 70 100 6 0.855/1.1/1.3 BAW56 Dual diode with common anode 70 100 6 0.855/1.1/1.3 HD4A Dual diode with common anode 75 100 6 10 /-/ SILICON ION IMPLANTED HYPERABRUPT TUNER DIODES Reverse Breakdown Nominal Capacitance Capacitance Ratio Q Voltage at V_ =2V, f= 1MHz f=1MHz at Vg =3V Type Va Ctot C2/Ca9 f =50MHz Volts pF max. min. typ. max. min. max. min. ZC830A 2 9.0 10 11.0 4.5 6.0 300 ZC831A 25 13.5 15 16.5 45 6.0 300 ZC832A 2 19.8 22 24.2 5.0 6.5 200 ZC833A 25 29.7 33 36.3 5.0 6.5 200 ZC834A 25 42.3 47 51.7 5.0 6.5 200 ZC835A 25 61.2 68 74.8 5.0 6.5 100 ZC836A 25 90.0 100 110.0 5.0 6.5 100 SCHOTTKY BARRIER DIODES Cy at Va =0V Type Var at Ip = 10pA Vp at Ip = 1mMA Ir [pat Ve=1V f = 1MHz min. (volts) max. (mV) max. nA at VR (volts) min. (mA) max. (pF) Z2C2800E 70 410 200 50 15 2.0 ZC2810E 20 410 100 15 35 1.2 Z2C2811E 15 410 100 10 20 1.2 ZC5800E 50 410 200 35 15 2.0 ZENER DIODES Voltage Type Range (V} tolerance Prot lzamM leRu % mw mA mA BZx84 2V7 to 47V 5 or 10 200 200 200 H9