V
RRM
= 80
0 V - 1200 V
I
F
= 16 A
Features
• High Surge Capab
ility
DO-4 Package
• Not ESD Sensitive
Note:
1. Standard p
olarity: Stud is
cathode.
3. Stud is b
ase.
Parameter
Sy
mbol
Unit
Repetitive peak
reverse voltage
V
RRM
V
RMS reverse voltage
V
RMS
V
DC blocking
voltage
V
DC
V
Continuous
forward current
I
F
A
Operating tem
perature
T
j
°C
Storage temp
erature
T
stg
°C
Parameter
Sy
mbol
Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resis
tance, jun
ction -
case
R
thJC
°C/W
• Types from 800 V to 1
200 V V
RRM
Silicon Standard
Recov
ery
Diode
2.50
Maximum ratings, at T
j
= 25 °C, unless otherw
ise specified ("R" devices have leads reversed)
16
16
16
370
370
370
800
1200
840
1200
1.1
1.1
-55 to 150
12
1000
800
10
S16Q (R)
1.1
10
10
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
S16K (R)
2.50
2.50
V
R
= 50 V, T
j
= 175 °C
12
12
Conditions
V
T
C
= 25 °C, t
p
= 8.3 m
s
T
C
≤ 140 °C
Conditions
S16K (R)
S16M (R)
S16Q (R)
1000
700
560
S16M (R)
S16K thru S16QR
V
R
= 50 V, T
j
= 25 °C
I
F
= 16 A, T
j
= 25 °C
Reverse current
I
R
V
F
2. Reverse pola
rity (R): Stud is an
ode.
Electrical characteristics,
at Tj = 25 °C, unless otherwise specified
Surge non-repe
titive forward
current, Half
Sine W
ave
I
F,SM
A
C
A
A
C
Stud
Stud
(R)
C
A
A
C
S
t
u
d
S
t
u
d
(
R
)
In
c
h
e
s
M
i
ll
i
m
e
te
r
s
M
i
n
M
a
x
M
i
n
M
a
x
A
10
-
3
2
U
N
F
B
0
.
4
2
4
0
.
4
3
7
1
0
.
7
7
1
1
.
1
0
C
-----
0
.
5
0
5
-----
1
2
.
8
2
D
------
0
.
8
00
-----
20
.
3
0
E
0
.
4
53
0
.4
92
1
1
.
5
0
1
2
.
5
0
F
0.
1
1
4
0
.
1
40
2
.
9
0
3
.
5
0
G
-----
0
.
4
0
5
-----
1
0
.
2
9
J
-----
0.
2
1
6
-----
5
.
5
0
M
-----
φ
0
.
302
-----
φ
7
.
6
8
N
0
.
0
31
0
.
0
45
0.
80
1.
15
P
0
.
0
70
0.
79
1.
80
2.
00
DO
-
4 (D
O
-
203AA
)
J
G
F
A
E
D
P
N
B
C
M
1
Oct. 2018
http://www
.diodemodule.com/silic
on_products/studs/s16q.pdf
S16K thru S16QR
C
A
A
C
S
t
u
d
S
t
u
d
(
R
)
C
A
A
C
S
t
u
d
S
t
u
d
(
R
)
In
c
h
e
s
M
i
ll
i
m
e
te
r
s
M
i
n
M
a
x
M
i
n
M
a
x
A
10
-
3
2
U
N
F
B
0
.
4
2
4
0
.
4
3
7
1
0
.
7
7
1
1
.
1
0
C
-----
0
.
5
0
5
-----
1
2
.
8
2
D
------
0
.
8
00
-----
20
.
3
0
E
0
.
4
53
0
.4
92
1
1
.
5
0
1
2
.
5
0
F
0.
1
1
4
0
.
1
40
2
.
9
0
3
.
5
0
G
-----
0
.
4
0
5
-----
1
0
.
2
9
J
-----
0.
2
1
6
-----
5
.
5
0
M
-----
φ
0
.
302
-----
φ
7
.
6
8
N
0
.
0
31
0
.
0
45
0.
80
1.
15
P
0
.
0
70
0.
79
1.
80
2.
00
DO
-
4 (D
O
-
203AA
)
J
G
F
A
E
D
P
N
B
C
M
2
Oct. 2018
http://www
.diodemodule.com/silic
on_products/studs/s16q.pdf
Package dime
nsions and terminal c
onfiguration
Product is
marked with part
number and
terminal c
onfigurati
on.
S16K thru S16QR
C
A
A
C
S
t
u
d
S
t
u
d
(
R
)
C
A
A
C
Stud
Stud
(R)
Inches
Millimeters
Min
Max
Min
Max
A
10
-32 UNF
B
0.424
0.437
10.77
1
1.10
C
-----
0.505
-----
12.82
D
------
0.8
00
-----
20
.30
E
0.4
53
0
.4
92
1
1.50
12.50
F
0.
1
14
0.1
40
2.90
3.50
G
-----
0.405
-----
10.29
J
-----
0.
216
-----
5.50
M
-----
φ
0.
302
-----
φ
7.68
N
0.0
31
0.0
45
0.80
1.15
P
0.0
70
0.79
1.80
2.00
DO
- 4 (DO-203AA)
J
G
F
A
E
D
P
N
B
C
M
3
Oct. 2018
http://www
.diodemodule.com/silic
on_products/studs/s16q.pdf
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