APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45m max @ Tj = 25C ID = 49A @ Tc = 25C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83m max @ Tj = 25C ID = 36A @ Tc = 25C 6 CR2 8 Q3 CR1 2 1 4 Q2 Q4 11 9 10 Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Solar converter 12 Features * CoolMOSTM - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged * By pass FRED diode (CR2) Benefits * Very low stray inductance * High level of integration * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Pins 7/8 ; 5/6 must be shorted together These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-9 APTC60AM83B1G - Rev 0 May, 2011 All ratings @ Tj = 25C unless otherwise specified APTC60AM83B1G 1. Phase leg (Q3 & Q4) Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Max ratings 600 36 27 115 20 83 250 20 1 1800 Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Unit V A V m W A mJ Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25C Tj = 125C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V 3 4 Max 100 5000 83 5 100 Unit Max Unit A m V nA Dynamic Characteristics Symbol Characteristic Input Capacitance Ciss Crss Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf RthJC Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 0.041 nF 250 VGS = 10V VBus = 300V ID = 36A nC 43 135 21 Inductive Switching (125C) VGS = 10V VBus = 400V ID = 36A RG = 5 30 ns 240 52 Junction to Case Thermal resistance 0.5 C/W Max 36 27 1.2 40 Unit Source - Drain diode ratings and characteristics Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ Tc = 25C Tc = 80C VGS = 0V, IS = - 36A IS = - 36A VR = 350V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 36A www.microsemi.com di/dt 100A/s 210 350 2 5.4 VR VDSS A V V/ns ns C Tj 150C 2-9 May, 2011 trr Test Conditions APTC60AM83B1G - Rev 0 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X APTC60AM83B1G 2. Boost chopper (CR1 & Q2) Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 600 49 38 130 20 45 250 15 3 1900 Unit V A V m W A mJ Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25C Tj = 125C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit Max Unit A m V nA Dynamic Characteristics Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance VGS = 10V VBus = 300V ID = 49A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 49A RG = 5 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Min Typ 7.2 8.5 nF 150 nC 34 51 21 30 ns 100 45 675 J 520 1100 J 635 0.5 www.microsemi.com C/W 3-9 May, 2011 Qg Test Conditions VGS = 0V ; VDS = 25V f = 1MHz APTC60AM83B1G - Rev 0 Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance APTC60AM83B1G Diode ratings and characteristics (CR1) Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC Test Conditions Min Maximum Reverse Leakage Current VR=600V DC Forward Current Reverse Recovery Time IF = 600A VR = 400V di/dt =200A/s Reverse Recovery Charge Max Unit V Tj = 25C 25 Tj = 125C 500 Tc = 80C IF = 60A IF = 120A IF = 60A Diode Forward Voltage Typ 600 Maximum Peak Repetitive Reverse Voltage Tj = 125C 60 1.7 2 1.4 Tj = 25C 70 Tj = 125C Tj = 25C 140 100 Tj = 125C 690 Junction to Case Thermal Resistance A A 2.3 V ns nC 0.85 C/W Max Unit V 3. By pass FRED diode (CR2) Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VGE = 0V IF = 30A VR = 300V di/dt =1800A/s Err RthJC Reverse Recovery Energy Min 600 Typ Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C 100 350 30 1.6 1.5 100 150 1.5 Tj = 150C Tj = 25C 3.1 0.34 Tj = 150C 0.75 Junction to Case Thermal Resistance A A 2 V ns C mJ 2.45 C/W Max Unit V 4. Thermal & Package characteristics RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 4000 -40 -40 -40 2.5 Typ 150* 125 100 4.7 80 C N.m g * Tjmax = 175C for by pass and SiC diode www.microsemi.com 4-9 May, 2011 Characteristic APTC60AM83B1G - Rev 0 Symbol VISOL TJ TSTG TC Torque Wt APTC60AM83B1G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com 5. Typical CoolMOS Performance Curve (Boost chopper) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0,6 0,5 D = 0,9 0,4 0,7 0,3 0,5 0,3 0,2 0,1 0,1 Single Pulse 0,05 0 0,00001 0,0001 0,001 0,01 0,1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 100 80 60 40 TJ=125C 20 TJ=25C 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1,2 VGS=10V 1,15 1,1 VGS=20V 1,05 1 0,95 0,9 ID, DC Drain Current (A) Normalized to VGS=10V @ 50A 1,25 7 DC Drain Current vs Case Temperature 50 RDS(on) vs Drain Current 1,3 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) May, 2011 0 RDS(on) Drain to Source ON Resistance 120 40 30 20 10 0 0 20 40 60 80 100 120 140 25 ID, Drain Current (A) www.microsemi.com 50 75 100 125 TC, Case Temperature (C) 150 5-9 APTC60AM83B1G - Rev 0 ID, Drain Current (A) 320 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1,2 1,1 1,0 0,9 0,8 25 50 75 100 125 150 RDS(on), Drain to Source ON resistance (Normalized) APTC60AM83B1G ON resistance vs Temperature 3,0 VGS=10V ID= 50A 2,5 2,0 1,5 1,0 0,5 0,0 25 TJ, Junction Temperature (C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1,0 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1,1 0,9 0,8 0,7 limited by RDSon 100 100 s 75 100 125 150 1 10 Ciss 1000 Crss 100 10 0 12 VDS=120V ID=50A TJ=25C 10 VDS=300V 8 VDS=480V 6 4 2 0 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 20 Delay Times vs Current 140 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Coss 10000 100 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 40 60 80 100 120 140 160 Gate Charge (nC) Rise and Fall times vs Current 70 120 60 td(off) tr and tf (ns) 100 VDS=400V RG=5 TJ=125C L=100H 80 60 40 VDS=400V RG=5 TJ=125C L=100H td(on) 20 50 tf 40 30 tr 20 10 0 0 0 10 20 30 40 50 60 70 80 0 10 ID, Drain Current (A) 1,6 40 50 60 70 80 Switching Energy vs Gate Resistance 2,5 Switching Energy (mJ) VDS=400V RG=5 TJ=125C L=100H 30 ID, Drain Current (A) Switching Energy vs Current 2 20 Eon 1,2 Eoff 0,8 0,4 0 VDS=400V ID=50A TJ=125C L=100H 2 1,5 Eoff Eon 1 0,5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 10 20 30 40 50 Gate Resistance (Ohms) May, 2011 Operating Frequency vs Drain Current 300 ZVS Frequency (kHz) 250 ZCS 200 VDS=400V D=50% RG=5 TJ=125C TC=75C 150 hard switching 100 50 0 5 10 15 20 25 30 35 ID, Drain Current (A) 40 45 www.microsemi.com 6-9 APTC60AM83B1G - Rev 0 C, Capacitance (pF) 10 ms 1 50 TC, Case Temperature (C) td(on) and td(off) (ns) 1 ms Single pulse TJ=150C TC=25C 10 0,6 25 Switching Energy (mJ) 50 75 100 125 150 TJ, Junction Temperature (C) APTC60AM83B1G 6. Typical Performance Curve (CR1) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0,9 0,9 0,8 0,7 0,7 0,6 0,5 0,5 0,4 0,3 0,3 0,2 0,1 0,05 0,1 0 0,00001 Single Pulse 0,0001 0,001 0,01 0,1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) IF, Forward Current (A) Trr vs. Current Rate of Charge 175 150 TJ=125C 125 100 TJ=25C 75 50 25 0 0,0 0,5 1,0 1,5 2,0 150 125 30 A 100 60 A 75 50 2,5 0 200 400 TJ=125C VR=400V 120 A 60 A 30 A 1,0 0,5 0,0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge 1,5 600 800 1000 1200 -diF/dt (A/s) VF, Anode to Cathode Voltage (V) 2,0 TJ=125C VR=400V 120 A IRRM vs. Current Rate of Charge 40 TJ=125C VR=400V 35 30 120 A 25 60 A 20 15 10 -diF/dt (A/s) 5 30 A 0 0 200 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage 400 300 200 100 1 10 100 May, 2011 0 1000 VR, Reverse Voltage (V) www.microsemi.com 7-9 APTC60AM83B1G - Rev 0 C, Capacitance (pF) 500 APTC60AM83B1G 7. Typical CoolMOS Performance Curve (Phase leg) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 80 60 6.5V 40 30 6V 20 5.5V 10 40 TJ=125C 20 TJ=125C TJ=25C 0 0 0 1 2 3 4 5 VDS, Drain to Source Voltage (V) 6 0 ID, DC Drain Current (A) Normalized to VGS=10V @ 18A 1.15 VGS=10V 1.1 1.05 1 VGS=20V 0.95 20 10 0 10 20 30 40 50 60 70 80 25 50 75 100 125 TC, Case Temperature (C) ID, Drain Current (A) BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 150 ON resistance vs Temperature 3.0 VGS=10V ID= 18A 2.5 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (C) 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.00 1000 ID, Drain Current (A) 0.95 0.90 0.85 0.80 0.75 100 10 0.70 100 s limited by RDSon Single pulse TJ=150C TC=25C 1 ms 10 ms 1 25 50 75 100 125 150 1 10000 Coss 1000 100 Crss 10 1 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Ciss 100 VDS, Drain to Source Voltage (V) TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 10 May, 2011 0 VGS(TH), Threshold Voltage (Normalized) 10 30 0.9 Breakdown Voltage vs Temperature C, Capacitance (pF) 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 RDS(on) vs Drain Current 1.2 RDS(on), Drain to Source ON resistance (Normalized) RDS(on) Drain to Source ON Resistance 60 14 ID=36A TJ=25C 12 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 www.microsemi.com 50 100 150 200 Gate Charge (nC) 250 300 8-9 APTC60AM83B1G - Rev 0 ID, Drain Current (A) ID, Drain Current (A) VGS=15&10V 50 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle APTC60AM83B1G Delay Times vs Current 300 VDS=400V RG=5 TJ=125C L=100H td(off) 250 td(on) and td(off) (ns) Rise and Fall times vs Current 100 80 tr and tf (ns) 200 VDS=400V RG=5 TJ=125C L=100H 150 100 50 60 tf 40 tr 20 td(on) 0 0 0 10 20 30 40 50 60 0 10 ID, Drain Current (A) 20 30 40 50 60 ID, Drain Current (A) 8. Typical By pass Performance Curve (CR2) Forward Characteristic of diode Energy losses vs Collector Current 60 1 VCE = 300V VGE = -15V TJ = 150C 50 0,75 Err (mJ) IF (A) 40 30 20 TJ=150C 0,5 0,25 10 TJ=25C 0 0 0 0,4 0,8 1,2 1,6 VF (V) 2 0 2,4 10 20 30 40 50 60 IF (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 2,5 2 0,9 0,7 1,5 0,5 1 0,3 0,5 0,1 Single Pulse 0,05 0 0,00001 0,0001 0,001 0,01 0,1 1 10 "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein. www.microsemi.com 9-9 APTC60AM83B1G - Rev 0 May, 2011 Rectangular Pulse Duration in Seconds