N-P-N transistors in a plastic TO-92 package. PNP complements are BC636, BC638 and BC640. QUICK REFERENCE DATA BC635; BC637; | L BC639 SILICON PLANAR EPITAXIAL TRANSISTORS Collector-base voitage (open emitter) VcBo Collector-emitter voltage (open base) VcEO Collector-emitter voltage (Rae = 1 k2Q) VCcER Collector-current (peak value) lcm Total power dissipation up to Tamb = 25 C Prot Junction temperature Tj D.C. current gain Ic = 150 mA; Vcg = 2V hFE Transition frequency at f = 100 MHz Ic = 50mA; VcE=5V fT max. max. max. max. max. max. AN BC635 | BC637 | BCE39 45 60 100 V 45 60 80 V 45 60 100 V 1,5 15 15 A 1 1 1W 150 150 150 C 40 40 40 250 250 250 100 100 100 MHz MECHANICAL DATA Dimensions in mm _t 0.40 Fig. 1 TO-92. Pinning c 1 = base b 2 = collector 3 = emitter masoi2 e [~ 5.2 max TT 12.7 min _-__> pt 0.48 4 0.40 max 284 1 . Le 2.0 max ?? 4 min MBCO14-1 Note (1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. September 1994 145BC635; BC637; BC639 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134} BC635 Collector-base voltage (open emitter) Collector-emitter voltage {apen base} Collector-emitter voltage (Rae = 1 k&2) Collector-emitter voltage (RgE = 0) Emitter-base voltage (open collector} Collector current (d.c.) Collector current (peak value) Emitter current (peak value) Base current (d.c.) Base current (peak value} Total power dissipation at Tamp = 25 OC up to Tamp = 25 OC Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient in free air From junction to ambient From junction to case VcBo VcEO VCER VCES VEBO lcm ~lEM IB IBM Prot tot stg Rthj-a Rthi-a Rthjec max. max. max. max. max. max. max. max. max. max. max. max. max. 100 200 0,8 1 -65 to + 150 150 156 125 60 KAW K/W* K/W * Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for collector lead min. 10 mm x 10 mm. 146 September 1994Silicon planar epitaxial transistors BC635; BC637; BC639 CHARACTERISTICS Tj = 25 9C unless otherwise specified Collector cut-off current le =0; Veg =30V IcBO < 100 nA le = 0; Veg = 30 V; Tj = 150 C icBO < 10 uA Emitter cut-off current Ic =0:Vep=5V lEBO < 10 HA Base-emitter voltage lc = 500 mA; Vce =2V VBE < Tv Saturation voltage I = 500 mA; Ip = 50 mA VCEsat < 0,5 V D.C. current gain Ic =5mMA;VcpE F2V hee > 25 = . = * h > 40 Iq = 150 MA; Vee =2V FE < 250 Ic = 500 mA; VcE=2V hee > 25 Transition frequency at f = 100 MHz Ic = 50 MA; Vce = 5 V fT > 100 MHz * BC635-10 5 63 BC637-10 hee c 160 BC639-10 : BC635-16 > BC637-16 hee rs BC639-16 : September 1994 147I. BC635; BC637 BC639 FPOTHI3 10 10 1072 N = S 104 Zth jira (K /W) 9 1075 Fig. 2. 148 September ) (