1. Product profile
1.1 General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in
a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package
designed to protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
Bidirectional ESD protection of one line
Extremely low diode capacitance Cd=0.25pF
Minimized capacitance variation over voltage
ESD protection up to 10 kV according to IEC 61000-4-2
Ultra small SMD package
1.3 Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
1.4 Quick reference data
2. Pinning information
PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
Rev. 1 — 10 December 2012 Product data sheet
Table 1. Quick reference data
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5 V
Cddiode capacitance f = 1 MHz; VR= 0 V 0.20 0.25 0.30 pF
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
2 cathode (diode 2)
Transparent
top view
21
sym045
21
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 2 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
3. Ordering information
4. Marking
5. Limiting values
[1] Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5.
[1] Device stressed with ten non-repetitive ESD pulses.
Table 3. Ordering information
Type number Package
Name Description Version
PESD5V0F1BSF DSN0603-2 leadless ultra small package; 2 terminals;
body 0.6 0.3 0.3 mm SOD962
Table 4. Marking codes
Type number Marking code
PESD5V0F1BSF F
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PPPM rated peak pulse power tp=8/20s[1] -28W
IPPM rated peak pulse current tp=8/20s[1] -2.2A
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
VESD electrostatic
discharge voltage IEC 61000-4-2 (contact discharge) [1] -10kV
IEC 61000-4-2 (air discharge) [1] -10kV
MIL-STD-883 (human body model) - 10 kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2, level 4 (ESD) > 8 kV (contact)
MIL-STD-883; class 3B (human body model) > 8 kV
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 3 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
6. Characteristics
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
Fig 1. 8/20 s pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (μs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
et
100 % IPP; 8 μs
50 % IPP; 20 μs
001aaa631
I
PP
100 %
90 %
t
30 ns 60 ns
10 %
t
r
= 0.7 ns to 1 ns
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff
voltage --5V
IRM reverse leakage
current VRWM = 5 V - 1 100 nA
VCL clamping voltage IPP =0.5A [1] --10V
IPPM =2.2A [1] - - 12.8 V
VBR breakdown voltage IR=1mA 6 - 10 V
Cddiode capacitance f = 1 MHz; VR= 0 V 0.20 0.25 0.30 pF
rdyn dynamic resistance IR=10A [2] -1.3-
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 4 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
f=1MHz; T
amb =25C
Fig 3. Diode capacitance as a function of reverse
voltage; typical values Fig 4. V-I characteristics for a bidirectio nal
ESD pr otection diode
tp= 100 ns; Transmission Line Pulse (TLP)
Fig 5. Dynamic resistance; typical values
VR (V)
0.0 5.04.02.0 3.01.0
018aaa061
0.4
0.6
0.2
0.8
1.0
Cd
(pF)
0.0
006aab325
-VCL -VBR -VRWM VCL
VBR
VRWM
-IRM
IRM
-IR
IR
-IPP
IPP
-+
IPPM
-IPPM
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
9&/9
,3333
,33
$$$
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 5 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
Fig 6. ESD clamping test setu p and waveforms
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26&,//26&23(
[
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,(&QHWZRUN
*1'
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,(&QHWZRUN
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*1'
FODPSHGN9(6'SXOVHZDYHIRUP
,(&QHWZRUN
YHUWLFDOVFDOH N9GLY
KRUL]RQWDOVFDOH QVGLY
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KRUL]RQWDOVFDOH QVGLY
YHUWLFDOVFDOH 9GLY
KRUL]RQWDOVFDOH QVGLY
YHUWLFDOVFDOH 9GLY
KRUL]RQWDOVFDOH QVGLY
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 6 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
7. Application information
The PESD5V0F1BSF is designed for the protection of one data or signal line from surge
pulses and ESD damage. The device is suitable on lines where the signal polarities are
both, positive and negative with respect to ground. It provides protection against surges
with up to 28 W per line.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as clos e to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
Fig 7. Application di ag ram
aaa-002737
ESD protection diode
GND
line to be protected
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 7 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
Fig 8. Package outline DSN0603-2 (SOD962)

Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
9000
PESD5V0F1BSF DSN0603-2
(SOD962) 2 mm pitch, 8 mm tape and reel -315
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 8 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
10. Soldering
Fig 9. Reflow sold erin g footprint DSN0603-2 (SOD962)
Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962
sod962_fr
solder land
solder resist
solder land plus solder paste
solder paste deposit
Dimensions in mm
R0.025 (8×)
0.12
(2×)
0.2
(2×)
0.22
(2×)
0.4
0.85
0.4
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 9 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
11. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0F1BSF v.1 20121210 Product data sheet - -
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 10 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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Short data sheet — A short data sheet is an extract from a full data sheet
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full information. For detailed and full information see the relevant full data
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the obj ective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PESD5V0F1BSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 10 December 2012 11 of 12
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
Export control — This document as well as the item(s) described herein
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Quick reference data — The Quick reference data is an extract of the
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In the event that customer uses the product for design-in and use in
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12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 December 2012
Documen t identifie r: PESD5V0F1BSF
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information . . . . . . . . . . . . . . . . . . . . . 7
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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