BAS32L-T - NXP - Datasheet.Live

1. Product profile

1.1 General description

Single high-speed switching diode, fabr icated in planar technology, and encapsula ted in a

small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.

1.2 Features and benefits

High switching speed: trr ≤4ns

Reverse voltage: VR≤75 V

Repetitive peak reverse voltage: VRRM ≤100 V

Repetitive peak forward current: IFRM ≤450 mA

Small hermetically sealed glass SMD package

1.3 Applications

High-speed switching

Reverse polarity protection

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] When switched from IF= 10 mA to IR=10mA; R

L= 100 Ω; measured at IR=1mA.

BAS32L

High-speed switching diode

Rev. 7 — 20 January 2011 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

IFforward current [1] --200mA

IFRM repetitive peak forward

current --450mA

VRreverse voltage - - 75 V

VFforward voltage IF= 100 mA - - 1000 mV

trr reverse recovery time [2] --4ns

Product data sheet Rev. 7 — 20 January 2011 2 of 11

NXP Semiconductors BAS32L

High-speed switching diode

2. Pinning information

[1] The marking band indicates the cathode.

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode [1]

2 anode ka

006aab04

Table 3. Ordering i nformation

Type number Package

Name Description Version

BAS32L - hermetically sealed glass surface-mounted package;

2 connectors SOD80C

Table 4. Marking codes

Type number Marking code

BAS32L marking band

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse

voltage -100V

VRreverse voltage - 75 V

IFforward current [1] -200mA

IFRM repetitive peak forward

current -450mA

IFSM non-repetitive peak forward

current square wave [2]

tp=1μs-4A

tp=1ms - 1 A

tp=1s - 0.5 A

Product data sheet Rev. 7 — 20 January 2011 3 of 11

NXP Semiconductors BAS32L

High-speed switching diode

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Tj=25°C prior to surge.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

[1] When switched from IF= 10 mA to IR=10mA; R

L= 100 Ω; measured at IR=1mA.

[2] When switched from IF=50mA; t

r=20ns.

Ptot total power dissipation Tamb =25°C[1] -500mW

Tjjunction temperature - 200 °C

Tamb ambient temperature −65 +200 °C

Tstg storage temperature −65 +200 °C

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --350K/W

Rth(j-sp) thermal resistance from

junction to solder point --300K/W

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage IF=5mA 620- 750mV

IF= 100 mA - - 1000 mV

IF=100mA; T

j=100°C- - 930mV

IRreverse current VR=20V - - 25 nA

VR=75V - - 5 μA

VR=20V; T

j=150°C--50μA

VR=75V; T

j=150°C--100μA

Cddiode capacitance VR=0V; f=1MHz - - 2 pF

trr reverse recovery

time [1] --4ns

VFR forward recovery

voltage [2] --2.5V

Product data sheet Rev. 7 — 20 January 2011 4 of 11

NXP Semiconductors BAS32L

High-speed switching diode

FR4 PCB, standard footprint (1) Tj= 175 °C; typical values

(2) Tj=25°C; typical values

(3) Tj=25°C; maximum values

Fig 1. Forward current as a function of ambient

temperature; derating curve Fig 2. Forward current as a function of forward

voltage

Based on square wave currents.

Tj=25°C prior to surge (1) VR= 75 V; maximum values

(2) VR= 75 V; typical values

(3) VR= 20 V; typical values

Fig 3. No n-repetitive peak forwar d current as a

function of pulse duration; maximum valu es Fig 4. Re verse current as a function of junction

temperature

0 100 200

300

200

100

mbg451

Tamb (°C)

(mA)

012

600

200

400

mbg464

VF (V)

(mA)

(1) (2) (3)

mbg704

102

IFSM

(A)

10−1

tp (μs)

110

103

10 1020 100 Tj (°C) 200

103

102

10−1

10−2

10 (1) (2)

(μA)

mgd006

(3)

Product data sheet Rev. 7 — 20 January 2011 5 of 11

NXP Semiconductors BAS32L

High-speed switching diode

8. Test information

f=1MHz; T

j=25°C

Fig 5. Diod e capacitance as a function of reverse voltage; typical values

01020

1.2

1.0

0.6

0.4

0.8

mgd004

VR (V)

(pF)

Input signal: Reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty factor δ≤0.05

Oscilloscope: Rise time tr=0.35ns

(1) IR=1mA

Fig 6. Re verse recovery time test circuit and wav eforms

Input signal: Forward pulse rise time tr= 20 ns; forward current pulse duration tp≥100 ns; duty factor δ≤0.005

Fig 7. F orward recovery voltage test circuit and waveforms

trr

(1)

+ I

output signal

10 %

90 %

input signal

V = V

= 50 ΩI

D.U.T.

= 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

10 %

90 %

input signal

= 50 Ω

OSCILLOSCOPE

1 kΩ450 Ω

D.U.T.

mga88

VFR

output signal

Product data sheet Rev. 7 — 20 January 2011 6 of 11

NXP Semiconductors BAS32L

High-speed switching diode

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 8. Package outline SOD80C

06-03-16Dimensions in mm

1.60

1.45

0.3

3.7

3.3

0.3

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

2500 10000

BAS32L SOD80C 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 7 — 20 January 2011 7 of 11

NXP Semiconductors BAS32L

High-speed switching diode

11. Soldering

Fig 9. Reflow soldering footprint SOD80C

Fig 10. Wave soldering footprint SOD80C

sod080c

2.30

4.30

4.55

1.601.702.25

0.90

(2x)

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

sod080c

2.70

4.90

6.30

1.702.90

1.90

solder lands

tracks

solder resist

occupied area

Dimensions in mm

Product data sheet Rev. 7 — 20 January 2011 8 of 11

NXP Semiconductors BAS32L

High-speed switching diode

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAS32L v.7 20110120 Product data sheet - BAS32L v.6

Modifications: •Table 4 “Marking codes”: amended

•Section 13 “Legal information”: updated

BAS32L v.6 20081029 Product data sheet - BAS32L v.5

BAS32L v.5 20080103 Product data sheet - BAS32L v.4

BAS32L v.4 20050322 Product data sheet - BAS32L v.3

BAS32L v.3 20020123 Product specification - BAS32L v.2

BAS32L v.2 19960910 Product specification - BAS32L v.1

BAS32L v.1 19960423 Product specification - -

Product data sheet Rev. 7 — 20 January 2011 9 of 11

NXP Semiconductors BAS32L

High-speed switching diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

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13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

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Notwithstanding any damages that customer might incur for any reason

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Applications — Applications that are described herein for any of these

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representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

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the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains dat a from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 7 — 20 January 2011 10 of 11

NXP Semiconductors BAS32L

High-speed switching diode

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omo tive use. It i s neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product claims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specif ications.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BAS32L

High-speed switching diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 January 2011

Document identifier: BAS32L

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

10 Packing information . . . . . . . . . . . . . . . . . . . . . 6

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Contact information. . . . . . . . . . . . . . . . . . . . . 10

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11