2224-12L - GHz Technology, Inc.

R.A.041400

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION

PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECT.

GHz Technology I n c. 3000 Oakmead Village Drive, Sa nta Clara, CA 95051-0808 Tel. 408 / 986-8031 Fa x 408 / 986-8120

2224-12L

12 Watts, 22 Volts, Class C

Microwave 2200 - 2400 MHz

GENERAL DESCRIPTION

The 2224-12L is a Common Base transistor capable of provid ing 12 Watts Class

C, RF Output Power over the band 2200-2400 MHz, The transistor includes

double input and output prematching for full broadband capability. Gold

Metalization and diffused ballasting are used to provide high reliability and

supreme ruggedness.

CASE OUTLINE

55AW Style 1

COMMON BASE

ABSOLUTE MAXIMUM RATINGS

Maximum P owe r Diss ipat io n @ 25 °C 44 Watts

Maximum Voltage and Current

Collector to Emitter Voltage (BVCES) 45 V

Emitter to Base Voltage (B VEBO) 3

VCollector Curre nt (Ic) 3.0 Amps

Maximu m T emp e ra t u r e s

Storage Temperature -40 to +200 °C

Operating Junction Temperature +200 °C

ELECTRICAL CHAR ACTE R ISTICS @ 25°C

SYMB OL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

Pout Power Out 12 W

Pin Power Input 2.25 W

PgPower Gain 7.5 dB

ηcCollector Efficiency 42 %

VSWR Load Mismatch Tolerance

F = 2200-2400 MHz

VCC = 22 Volts

Pout = 12 Watts Pk 9:1

FUNCTIONAL CHARACTERISTICS @ 25°C

BVCES Collector to Base Breakdown 45 V

BVEBO Emitter to Base Breakdown 3.0 V

hFE DC – Current Gain 15 100

COB Output Capacitance*

θjc Thermal Resi sta nce

Ic = 50 mA

Ie = 10 mA

Vce = 5V, Ic = 1A

Vcb = 28v, F = 1MHz

Tc = 25oC4.0 °C/W

*Not measur eable due to internal prematch net wor k