DATA SH EET
Product specification
File under Discrete Semiconductors, SC07 April 1995
DISCRETE SEMICONDUCTORS
PMBFJ111;
PMBFJ112; PMBFJ113
N-channel junction FETs
April 1995 2
Philips Semiconductors Product specification
N-channel junction FETs PMBFJ111;
PMBFJ112; PMBFJ113
FEATURES
•High-speed switching
•Interchangeability of drain and
source connections
•Low RDSon at zero gate voltage
( < 30 Ωfor PMBFJ111).
DESCRIPTION
Symmetrical N-channel junction
FETs in a surface mount SOT23
envelope. Intended for use in
applications such as analog switches,
choppers, commutators, multiplexers
and thin and thick film hybrids.
PINNING - SOT23
Note
1. Drain and source are
interchangeable.
PIN DESCRIPTION
1 drain
2 source
3 gate
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −±40 V
VGSO gate-source voltage −−40 V
VGDO drain-drain voltage −−40 V
IGforward gate current
(DC) −50 mA
Ptot total power dissipation Tamb =25°C;
note 1 −300 mW
Tstg storage temperature −65 150 °C
Tjoperating junction
temperature −150 °C
Fig.1 Simplified outline and symbol.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
April 1995 3
Philips Semiconductors Product specification
N-channel junction FETs PMBFJ111;
PMBFJ112; PMBFJ113
THERMAL CHARACTERISTICS
Tj=P(Rth j-t +Rth t−s+Rth s-a)+Tamb
Notes
1. Mounted on a ceramic substrate, 8 mm ×10 mm ×0.7 mm.
2. Mounted on printed circuit board.
STATIC CHARACTERISTICS
Tj=25°C.
SYMBOL PARAMETER MAX. UNIT
Rth j-a from junction to ambient (note 1) 430 K/W
Rth j-a from junction to ambient (note 2) 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
−IGSS reverse gate current −VGS = 15 V; VDS =0 −1nA
I
DSS drain current VGS = 0; VDS = 15 V
PMBFJ111 20 −mA
PMBFJ112 5 −
PMBFJ113 2 −
−V(BR)GSS gate-source breakdown voltage −IG=1µA; VDS =0 40 −V
−V
GS(off) gate-source cut-off voltage ID=1µA; VDS =5 V
PMBFJ111 3 10 V
PMBFJ112 1 5
PMBFJ113 0.5 3
RDS(on) drain-source on-resistance VGS = 0 V; VDS = 0.1 V
PMBFJ111 −30 Ω
PMBFJ112 −50
PMBFJ113 −100
April 1995 4
Philips Semiconductors Product specification
N-channel junction FETs PMBFJ111;
PMBFJ112; PMBFJ113
DYNAMIC CHARACTERISTICS
Tj =25°C.
Notes
1. Test conditions for switching times are as follows:
VDD = 10 V, VGS = 0 to −VGS(off) (all types);
−VGS(off) = 12 V, RL= 750 Ω(PMBFJ111);
−VGS(off) = 7 V, RL= 1550 Ω(PMBFJ112);
−VGS(off) = 5 V, RL= 3150 Ω(PMBFJ113).
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Ciss input capacitance VDS = 0
−VGS = 10 V
f = 1 MHz
6−pF
VDS = 0
−VGS =0
f = 1 MHz
Tamb =25°C
22 28 pF
Crss feedback capacitance VDS = 0
−VGS = 10 V
f = 1 MHz
3−pF
Switching times (see Fig.2)
trrise time note 1 6 −ns
ton turn-on time note 1 13 −ns
tffall time note 1 15 −ns
toff turn-off time note 1 35 −ns
Fig.2 Switching circuit.
o
k, halfpage
MBK289
50 Ω
RL
DUT
10 µF
1 µF
VDD 10 nF
50 Ω
SAMPLING
SCOPE
50 Ω
Fig.3 Input and output waveforms.
MBK294
−VGS off toff
tf
ts
VGS = 0 V
Vi
Vo
10%
90%
90%
10%
ton
tr
td
April 1995 5
Philips Semiconductors Product specification
N-channel junction FETs PMBFJ111;
PMBFJ112; PMBFJ113
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
April 1995 6
Philips Semiconductors Product specification
N-channel junction FETs PMBFJ111;
PMBFJ112; PMBFJ113
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
