DA2F100N/P12S May. 2009 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optim ized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Common Side & N- Type 1 2 Common Side & P-Type 1 3 2 3 Features Repetitive Reverse Voltage : VRRM = 1200V Low Forward Voltage Drop : VF(typ.) = 1.7V Average Forward Current : IF(AV.) = 100A @ Tc = 100 Ultra-Fast Reverse Recovery Tim e : trr(typ.) = 100 ns Extensive Characterization of Recovery Parameters Reduced EMI and RFI Isolation Type Package Package : 5DM-1 Series Applications Motor Drives, Free wheel use, High Power Converters, Welders, Various Switching and Telecommunication Power Supply. Please see the package Out line information Ordering Information Device Name Optional Information DA2F100N12S DA2F100P12S Common Side & N-Type Common Side & P-Type Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions I2t Repetitive Peak Reverse Voltage Reverse DC Voltage Average Forward Current @ Tc = 25 @ Tc = 100 Surge(non-repetitive) Forward Current I2t for Fusing Tj Tstg Visol Pd - Junction Temperature Storage Temperature Isolation Voltage Maximum Power Dissipation Mounting Torque Terminal Torque Weight VRRM VR(DC) IF(AV) IFSM Resistive Load One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, tw = 8.3ms, Tj = 25 Start @ AC 1 minutes Typical Including Screws Copyright@DAWIN Electronics Co., Ltd. All right reserved 1/4 Ratings 1200 960 200 100 2000 Unit V V A A A 16.7* 103 A2s -40 ~ 150 -40 ~ 125 2500 300 4.0 2.0 140 V W N.m N.m g DA2F100N/P12S May. 2009 Thermal Characteristics Values Symbol Rth(j-c) Parameter Conditions Thermal Resistance Junction to Case Min. Typ. Max. - - 0.4 Unit /W Electrical Characteristics @ Tj=25 (unless otherwise specified) Values Symbol VR VFM IRRM Trr Parameter Conditions Cathode Anode Breakdown Voltage Maximum Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Tim e Typ. Max. 1200 - - V - 1.7 2.3 - 2.2 3.0 V V mA Tc = 25 - 100 130 ns Tc = 100 - 150 - ns IR = 500uA IFM = 100A, Tc = 25 IFM = 100A, Tc =100 TC = 100, VRRM applied IFM = 100A, VR = 600V di/dt=-100A/us Copyright@DAWIN Electronics Co., Ltd. All right reserved 2/4 Unit Min. DA2F100N/P12S May. 2009 Performance Curves 110 TC =25 R e v e rs e R e c o v e ry T im e ,t rr, [ n s ] Fo rwa rd Cu rre n t IF[A ] 1000 TC =100 100 10 1 1.5 2 2.5 3 90 80 70 100 1 0.5 100 3.5 1000 di/dt[A/us] Forward Voltage Drop VF[V] Fig. 1 : Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 : Typical Reverse Recovery Time vs. -di/dt 120 A ver ag e F or w ar d C ur ren t I F(AV G ) [A ] T h e rm a l R e s p o n c e Z th jc [ / w ] 1 0.1 0.0 1 100 80 60 40 20 0.001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 0 1.E +00 60 Rectangular Pulse Duration[sec] 80 100 120 Case Temperatu re [] Fig. 4 : Forward Current Derating Curve Fig. 3 : Transient Thermal Impedance(Zthjc ) Characteristics Copyright@DAWIN Electronics Co., Ltd. All right reserved 3/4 140 160 May. 2009 Package Out Line Information 5DM-1 Series Copyright@DAWIN Electronics Co., Ltd. All right reserved 4/4 DA2F100N/P12S