1SC2060P2Ax-17
IGBT-Driver.com Page 1
1SC2060P2Ax-17 Preliminary Datasheet
Single-Channel High-Pow er Hi gh-Frequency SCALE-2 Driver Core
Abstract
The 1SC20 60P2Ax -17 is a 20W, 60A CONCEPT driver core. This high-performance SCA LE-2 driver targets high-
power single-channel IGBT and MOSFET applications such as induction heating, resonant and high-frequency
power conversion as well as parallel gate driving of lar g e modules.
It features newly developed planar transformer technology for a real leap forward in power density, noise
immunity, and reliability.
Equipped with the latest SCALE-2 chipset, the gate driver supports switching up to 500kHz at best-in-class
efficiency. The 1SC2060P2Ax-17 effectively comprises a complete single-channel IGBT driver core, fully
equipped with an isolated DC/DC converter, short-circuit protection, advanced active clamping and supply-
voltage monitoring.
With its extremely compact outline of 44mm x 74mm and a total height of typ. 6.5mm, it delivers high power
density with an attractive form factor. Thanks to the highly integr ated SCALE -2 chipset, t he component count
is reduced by 80% compared to conventional solutions. This results in significantly increased reliability and
reduced costs.
Product Highlights Applications
20W maximum output power Inductio n heating
Switchi ng up to 50 0kH z High-fre q ue n cy con ver te rs
New SCALE-2 platform High-curr ent switches
Planar transformer Industrial drives
Jitter less than ±1ns Pulse power
Signal delay < 80ns Resonant switching
3.3V…15V input logic Wind power co nverters
1700V isolation (signal + DC/DC) Single switch control
Safe isolation to EN 5 0178 Parallel connection of modules
UL compliant
Dedicated IGBT and MOSFET mode
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
Page 2 INTELLIGENT POWER ELECTRONICS
Safety Notice!
The data contained in this data sheet is intended exclusively for technically trained staff. Handling all high-
voltage equipment involves risk to life. Strict compliance with the respective safety regulations is mandatory!
Any handling of electronic devices is subject to the general specifications for protecting electrostatic-sensitive
devices according to inte rn ational sta ndard IE C 60747-1, Chapter IX or European standard EN 1000 15 (i. e. the
workplace, tools, etc. must comply with these standar ds). Otherw ise, this product may be damaged.
Important Product Documentati on
This data sheet contains only product-specific data. For a detailed description, must-read application notes and
important informa tion that app ly to this product, plea se refer to “1SC2060P Descr iption & Application Man ual”
on www.IGBT-Driver.com/go/1SC2060P
Absolut e Maxi mum Ra t ing s
Parameter Remarks Min Max Unit
Supply voltage VDC
VDC to GND 0 16 V
Supply voltage VCC
VCC to GND 0 16 V
Logic inp ut and outp ut voltages Primary side, to GND -0.5 VCC+0.5 V
SO current Failure condit ion, total current 20 mA
Gate peak current Iout Notes 1, 11 -60 +60 A
Average sup ply cur rent IDC Notes 2, 3 2100 mA
Output power Ambient temperature <70°C (Notes 4, 5) 23 W
Ambient temperature 85°C (No te 4) 21 W
Switching frequency F 500 kHz
Test voltage (50Hz/1min.) Primary to secondary side (Note 12) 5000 VAC(eff)
Operating voltage Primary to secondary side 1700 Vpeak
|dV/dt| Rate of change of inp ut to o utput voltage (Note 17) 100 kV/μs
Operating temperature Note 5 -40 +85 °C
Storage temperature -40 +90 °C
Recommended Operating Conditions
Power Supply Remarks Min Typ Max Unit
Supply voltage
VDC
VDC to GND, IGBT mode 14.5 15 15.5 V
Supply voltage VDC
VDC to GND, MOSFET mode (Note 10) 6 12 V
Supply voltage
VCC
VCC to GND 14.5 15 15.5 V
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
IGBT-Driver.com Page 3
Electrical Characteristics (IGBT mode)
All data refer to +25°C and VCC = VDC
= 15V unless otherwise specified.
Power supply Remarks Min Typ Max Unit
Supply current IDC Without load 36 60 mA
Supply current ICC F = 0Hz 12 15 mA
Supply current ICC F = 360kHz 31 mA
Coupling capacitance Cio Primary to output, total 40 pF
Power Supply Monitoring Remarks Min Typ Max Unit
Supply threshold VCC Primary side, clear fault 11.9 12.6 13.3 V
Primary side, set fault (Note 18) 11.3 12.0 12.7 V
Monitoring hysteresis Primary side, set/clear fault 0.35 V
Supply threshold VISO-VE Secondary side, clear fault 12.1 12.6 13.1 V
Secondary side, set fault (N ote 18) 11.5 12.0 12.5 V
Monitoring hysteresis Secon dary si de, set/clear fault 0.35 V
Supply threshold VE-VCOM Secondary side, clear fault 5 5.15 5.3 V
Secondary side, set fault (N ote 18) 4.7 4.85 5 V
Monitoring hysteresis Secon dary si de, set/clear fault 0.15 V
Logic Inputs and Outputs Remarks Min Typ Max Unit
Input bias current V(IN) > 3V 190 µA
Turn-on threshold V(IN) 2.6 V
Turn-off threshol d V(IN) 1.3 V
SO output voltage Failure condition, I(SO)<20mA 0.7 V
Short-Circuit Protection Remarks Min Typ Max Unit
Current throug h pin REF R(REF, VE)<70kΩ 150 µA
Minimum response time Not e 15 1.2 µs
Minimum blocking time Note 16 9 µs
Timing Charact eristics Remarks Min Typ Max Unit
Turn-on delay td(on) Note 6 75 ns
Turn-off delay td(off) Note 6 70 ns
Jitter of turn-on dela y Note 20 ±1 ns
Jitter of turn-off de lay Note 20 ±1 ns
Output rise time tr(out) N ote 7 10 ns
Output fall time tf(out) No te 7 15 ns
Transmission delay of fault state Note 19 400 ns
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
Page 4 INTELLIGENT POWER ELECTRONICS
Electrical Isolation Remarks Min Typ Max Unit
Test voltage (50Hz/1s) Primary to second ary side (Note 12) 5000 5050 5100 VAC(eff)
Partial discharge extinction volt. Note 13 1768 Vpeak
Creepage distance Primary to secondary side 15 mm
Clearance distance Primary to secondary side 15 mm
Output Remarks Min Typ Max Unit
Blocking capacitance VISO to VE Note 14 9.4 µF
Blocking capacitance VE to COM Note 14 9.4 µF
External gate resistor loop F ≤ 250kHz (Note 8) 2.0 Ω
Turn-on gate resist or Rg(on) F ≤ 250kHz (Note 9) 1.0 Ω
Turn-off gate resistor Rg(off) F ≤ 250kHz (Note 9) 1.0 Ω
External gate resistor loop F ≤ 310kHz (Note 8) 3.2 Ω
Turn-on gate resist or Rg(on) F ≤ 310kHz (Note 9) 1.6 Ω
Turn-off gate resistor Rg(off) F ≤ 310kHz (Note 9) 1.6 Ω
External gate resistor loop F ≤ 360kHz (Note 8) 4.8 Ω
Turn-on gate resist or Rg(on) F ≤ 360kHz (Note 9) 2.4 Ω
Turn-off gate resistor Rg(off) F ≤ 360kHz (Note 9) 2.4 Ω
Output power
The permissible drive pow e r at the outp ut of the dri ve r ca rd is gi ven versu s swit ching freque ncy for dif ferent
total gate resistance values. Linear interpolation is permissible for gate resistance values other than those
shown. Howeve r, no extrapolation beyond the given data range is allowed.
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
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Fig. 1 Output power vs. swit ching freque ncy at ambient temperature r ange – 4 0°C through
85°C
Fig. 2 Output power vs. swit ching freque ncy at ambient temperature r ange – 4 0°C through
70°C
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
Page 6 INTELLIGENT POWER ELECTRONICS
To check if the driver output power is in accordance with the data given in Figs. 1 and 2, proceed as follows:
• determine the actual gate charge of the power switch
• check wi th note 14
• determine the output voltage swing of the driver at the required switching frequency
• calculate the output power as gate charge x voltage swing x frequency
• check the calc ul at ed pow er a t the r el eva nt sw it ching fr e quenc y a ga inst t he d ia gra m “O utput pow er vs .
switching frequency” at the appropriate max. temperature (70°C / 85°C)
The actual value of the driver’s output voltage swing should be taken to determine the output power drawn
from the driver. If the nom inal (no-load) val ue is ta ken, the driver will not be opera ted up to its full capacit y.
See the section “Output voltage swing” for o utput voltage swing vs. output power.
Output voltage swing
The output voltage swing consists of two distinct segments. First, there is the turn-on voltage VGH between
pins GH and VE. VGH is regulated and maintained at a constant level for all output power values and
frequencies.
The second segment of the output voltage swing is the turn-off voltage V GL. V GL is measured between pins
GL and VE. It is a negative voltage. It changes with the output power to accommodate the inevitable voltage
drop across the internal DC/DC converter.
Output Voltage Remarks Min Typ Max Unit
Turn-on voltage, VGH Any load condition 15.0 V
Turn-off volt a ge, VGL No load -10.5 V
Turn-off volt a ge , VGL 1W output pow er -9.2 V
Turn-off volt a ge , VGL 20W output power -7.5 V
Fig. 3 Output voltage swing (typ.) vs. output power
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
IGBT-Driver.com Page 7
Electrical Characteristics (MOSFET Mode)
All data refer to +25°C and VCC = 15V unless st ated otherwise .
Power supply Remarks Min Typ Max Unit
Supply current IDC VDC=9.2V, wi thout load 25 mA
Supply current ICC F
= 0Hz 12 mA
Supply current ICC F
= 500kHz 39 mA
Coupling capacita nce Cio Primary to output, total 40 pF
Power Supply Monitoring Remarks Min Typ Max Unit
Supply threshold VCC Primary side, clear fa ult 11.9 12.6 13.3 V
Primary side, set fault (Note 18) 11.3 12.0 12.7 V
Monitoring hystere sis Primar y side, set/clear fault 0.35 V
Supply threshold VISO-VVE Secondary side, clear fault 8.3 8.75 9.2 V
Secondary side, set fault (N ote 18) 7.9 8.2 8.6 V
Monitoring hysteresis Secon dary si de, set/clear fault 0.23 0.5 V
Logic Inputs and Outputs Remarks Min Typ Max Unit
Input bias current V(IN) > 3V 160 µA
Turn-on threshold V(IN) 2.6 V
Turn-off threshol d V(IN) 1.3 V
SO output voltage Failure condition, I(SO)<20mA 0.7 V
Short-circuit Protection Remarks Min Typ Max Unit
Current throug h pin REF R(REF, VE)<70kΩ 150 µA
Minimum response time Not e 15 1.2 µs
Minimum blocking time Note 16 9 µs
Timing Charact eristics Remarks Min Typ Max Unit
Turn-on delay td(on) Note 6 75 ns
Turn-off delay td(off) Note 6 70 ns
Jitter of turn-on dela y Note 20 ±1 ns
Jitter of turn-off de lay Note 20 ±1 ns
Output rise time tr(out) N ote 7 10 ns
Output fall time tf(out) No te 7 15 ns
Transmission delay of fault state Note 19 400 ns
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
Page 8 INTELLIGENT POWER ELECTRONICS
Electrical Isolation Remarks Min Typ Max Unit
Test voltage (50Hz/1s) Primary to second ary side (Note 12) 5000 5050 5100 VAC(eff)
Partial discharge extinction volt. Note 13 1768 Vpeak
Creepage distance Primary to secondary side 15 mm
Clearance distance Primary to secondary side 15 mm
Output Remarks Min Typ Max Unit
Blocking capacitance VISO to VE Note 14 9.4 µF
Blocking capacitance VE to COM VE is short-circuited to COM Not applicable
External gate resistor loop F ≤ 500kHz (Note 8) 2.0 Ω
Turn-on gate resist or Rg(on) F ≤ 500kHz (Note 9) 1.0 Ω
Turn-off gate resistor Rg(off) F ≤ 500kHz (Note 9) 1.0 Ω
Output power
The permissible drive power at the output of t he driver card is given versus t he switching frequency for an
output voltage swing of 10V and 15V. No extrapolation is allowed beyond the given data range towards
higher fre que n cy val ues .
Fig. 4 Output power vs. switching frequency for ambient temperature range – 40°C throug h
85°C
To check if the driver output power is in accordance with the data given in Fig. 4, procee d as follows:
• determine the actual gate charge of the power switch
• check wi th note 14
• determine the output voltage swing of the driver at the required switching frequency
• calculate the output power as gate charge x voltage swing x frequency
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
IGBT-Driver.com Page 9
• check the calc ul at ed pow er a t the r el eva nt sw it ching fr e quenc y a ga inst the d ia gra m “O utput pow e r vs .
switching frequency” at the appropriate max. temperature (85°C)
The actual value of the driver’s output voltage swing should be taken to determine the output power drawn
from the driver. If the nom inal (no-load) val ue is taken, the driver will not be operat ed up to its full capacity .
See the section “Output voltage swing” for o utput voltage swing vs. output power.
Output voltage swing
The output voltage sw ing in MOS FET mode directly fo llows the pr imar y-side i nput voltage VDC. The fol lowin g
table gives exemp lary input voltag es VDC for a set of output voltages under various load conditions.
VDC for VGH=10V Remarks Min Typ Max Unit
Primary side input, VDC No load 6.3 V
Primary side input, VDC 12W o utput power 7.8 V
VDC for VGH=15V Remarks Min Typ Max Unit
Primary side input, VDC No load 9.2 V
Primary side input, VDC 17W o utput power 10.5 V
Footnot es to the K ey D a ta
1) The maximum peak gate current refers to the highest current level occurring during the product
lifetime. It is an absolute value and does also apply for short pulses.
2) The average supply input current is limited for thermal reasons. Higher values than specified by the
absolute maximum rating are permissible (e.g. during power supply start up) if the average remains
below the given value, provided the average is taken over a time period which is shorter than the
thermal time constants of the driver in the application.
3) There is no means of actively controlling or limiting the input current in the driver. In the case of
start-up with very high blocking capacitor values, or in case of short circuit at the output, the supply
input current has to b e limited exter nally.
4) The maximum output power must not be exceeded at any time during operation. The absolute
maximum rating must also be observed for time periods shorter than the thermal time constants of
the driver in the application.
5) An extended output power range is specified in the output power section for maximum ambient
temperatures of 70°C. In that case, the absolute maximum rating for the operating temperature
changes to (–40°C - 70°C) and the absolute maximum output power rating changes to 23W.
6) The delay time is measured between 50% of the input signal and 20% voltage swing of the
corresponding output. The delay time i s indepe ndent of the output loading.
7) Output rise and fall times are measured between 10% and 90% of the nominal output swing. The
values are given for the driver side of the gate resistors. The time constant of the output load in
conjunction with the present gate resistors leads to an additional delay at the load side of the gate
resistors.
8) The external gate resistor loop comprises all resistors located between the driver gate and the driver
emitter. The internal resistance of any output load (e.g. an IGBT module) m akes no contribution.
Example:
Total turn-on gate resistance: 1.0Ω
Total turn-off gate resistance: 1.5Ω
IGBT module internal gate resista nce: 0.25Ω
Leads to:
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
Page 10 INTELLIGENT POWER ELECTRONICS
External turn-on gate re sistance: 0.75Ω
External turn-off gate resistance: 1.25Ω
External gate resistor loop: 2.0Ω
9) The values given refer to the total gate resistance, including both external resistors and the internal
resistance of the power module / t r ansistor.
10) The secondary side output voltag e swing must not ex ceed 20V.
11) The maximum current given is the short circuit value of the output stage. Continuous operation is
limited by thermal constraints. The surface temperature of the output stage must not exceed 125°C.
12) HiPot testing (= dielectric testing) must generally be restricted to suitable components. This gate
driver is suited for HiPot te sting. Nevert heless, it is str ongly recomme nded to limit the testing time t o
1s slots as stipulated by EN 50178. Excessive HiPot testing at voltages much higher than 1200V AC(eff)
may lead to insulation degradation. No degradation has been observed over 1min. testing at
5000VAC(eff). Every production sample shipped to customers has undergone 100% testing at
5000VAC(eff) (typical) for 1s.
13) Partial discharge measurement is performed in accordance with IEC 60270 and isolation coordination
specified in EN 50 178. The minimum value given is designed to include appropriate safety margins for
long-term ageing. Accelerated ageing tests show virtually no insulation det erioratio n. Minimum partial
discharge extinction voltages remain >2100V even after 2600 slow thermal cycles between –40°C and
125°C and also after 500 thermal shock cycles between –55°C and 150°C. The partial dischar ge
extinction voltage is coordinated for safe isolation to EN 50178.
14) External blocking capacitors are to be placed between VISO and VE as well as VE and COM for gate
charges exceeding 3µC. Ceramic capacitors are recommended. A minimum external blocking
capacitance of 3µF is recommended for every 1µC of gate charge beyond 3µC. Insufficient ex ternal
blocking can lead to reduced driver efficiency and th us to thermal ove rload .
15) The minimum response time given is valid for the circuit given in the descrip tion and application
manual (Figs. 5 and 6) with the values of table 1 (Ca=0pF, Rth=43kΩ).
16) The blocking time sets a minimum time span between the end of any fault state and the start of
normal operation (remove fault from pin SO). The value of the blocking time can be adjusted at pin
TB. The specified blocking time is valid if TB is connected to GND.
17) This spe cification guara ntees that the drive in formation will be tra nsferred reliabl y even at a high DC-
link voltage and with ultra-fast switching operations.
18) Undervoltage monitoring of the corresponding supply voltage (VCC to GND as well as VISO to VE and
VE to COM which correspond with the approximate turn-on and turn-off g ate-emitter voltages). If the
corresponding voltage drops below this limit, the power semiconductor is switched off and a fault is
transmitted to SO.
19) Transmission delay of fault state from the secondary side to the primary status output.
20) Jitter measurements are performed with input signal IN switching between 0V and 5V referred to
GND, with a corresponding rise tim e and fall time of 5ns.
Legal Disclaimer
This data sheet specifies devices but cannot promise to deliver any specific characteristics. No warranty or
guarantee is given – either expressly or implicitly – regarding delivery, performance or suitability.
CT-Concept Technologie AG reserves the right to make modifications to its technical data and product
specifications at any time without prior notice. The general terms and conditions of delivery of CT-Concept
Technologie AG apply.
1SC2060P2Ax-17
Prelim i nary Dat a Shee t
IGBT-Driver.com Page 11
Ordering I nfo rmat io n
The general terms and conditions of delivery of CT-Concept Technologie AG apply.
Type Designation Description
1SC2060P2A0-17 Single-channel SCALE-2 driver core
Product home page: www.IGBT-Driver.com/go/1SC2060P
Refer to www.IGBT-Driver.com/go/nomenclature for information on driver nom enclature
Information about Other Products
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Please click: www.IGBT-Driver.com
Manufacturer
CT-Concept Technologie AG
Intelligent Power E lectronics
Renferstrasse 15
CH-2504 Biel-Bienne
Switzerland
Tel. +41 - 32 - 344 47 4 7
Fax +41 - 32 - 344 47 40
E-mail Info@IGBT-Driver.com
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© 2008…2011 CT-Concept Technologie AG - Switzerland. All rights reserved.
We reserve the right to make any technical modifications without prior notice. Version from 2016-05-20
