Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com 1
Specifications subject to change without notice. 11/00A
GaAs IC High Isolation SPDT Non-Reflective
Switch with Driver DC–6.0 GHz
Features
■Positive Voltage Control (0/+3 to 0/+5 V)
■High Isolation (55 dB @ 0.9 GHz
and 1.9 GHz)
■LPCC 4 x 4 mm Package
■Integrated Silicon CMOS Driver
■Non-Reflective
LPCC 4 x 4 (-307)
AS196-307
Description
The AS196-307 is a GaAs FET IC SPDT non-reflective
switch packaged in a 16 lead leadless exposed pad plastic
package for low cost, high isolation commercial
applications. Ideal building block for base station
applications where synthesizer isolation is critical. Typical
applications include GSM, PCS, WCDMA, 2.4 and
5.8 GHz ISM and wireless local loop.
Parameter1Frequency Min. Typ. Max. Unit
Insertion Loss DC–2.0 GHz 0.9 1.15 dB
DC–3.0 GHz 1.0 1.25 dB
DC–4.0 GHz 1.2 1.4 dB
DC–6.0 GHz 2.0 2.5 dB
Isolation2DC–2.0 GHz 50 55 dB
DC–3.0 GHz 43 50 dB
DC–4.0 GHz 35 40 dB
DC–6.0 GHz 25 30 dB
VSWR (On State) DC–2.0 GHz 1.3:1 1.5:1
DC–6.0 GHz 1.3:1 1.6:1
VSWR (Off State) 0.5–6.0 GHz 1.35:1 1.7:1
Electrical Specifications (0, +5 V) 25°C
Preliminary
1. All measurements made in a 50 Ωsystem, unless otherwise specified.
2. Backside of exposed pad must be connected to RF ground to obtain
specified isolation.
3. Video feedthru measured for 3 ns risetime pulse.
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics3Rise, Fall (10/90% or 90/10% RF) 30 ns
On, Off (50% CTL to 90/10% RF) 50 ns
Video Feedthru 25 mV
Input Power for 1 dB Compression 0/+3 V 0.9–6.0 GHz 21 dBm
0/+5 V 0.9–6.0 GHz 27 dBm
Intermodulation Intercept Point (IP3) For Two-tone Input Power +8 dBm
0/+3 V 0.9–6.0 GHz 38 dBm
0/+5 V 0.9–6.0 GHz 46 dBm
Control Voltages VCTL = “0”0.0 0.5 V
VCTL = “1”for VCC = 5 V @ 200 µA Max. 3.5 5.0 V
Operating Characteristics at 25°C (0, +5 V)