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April 2015
©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. 1.4 www.fairchildsemi.com
1
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
FDC8601
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 109 mΩ
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A
Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technolo gy. T his process has been
optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch
Synchronous Rectifier
Primary Switch
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 100 V
VGS Gate to Source Voltage ±20 V
IDDrain Current -Continuous (Note 1a) 2.7 A
-Pulsed 12
EAS Single Pulse Avalanche Energy (Note 3) 13 mJ
PDPower Dissipation (Note 1a) 1.6 W
Power Dissipation (Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 30 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78
Device Marking Device Package Reel Size Tape Width Quantity
.861 FDC8601 SSOT-6 7 ’’ 8 mm 3000 units
SuperSOTTM -6
G
S
D
D
D
D
Pin 1 1
2
3
6
5
4
D
D
G
D
D
S
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
www.fairchildsemi.com
2
©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. 1.4
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C 70 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1μA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA2.0 3.0 4.0 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C -8 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.7 A 86 109 mΩVGS = 6 V, ID = 2.1 A 119 176
VGS = 10 V, ID = 2.7 A, TJ = 125 °C 144 183
gFS Forward Transconductance VDD = 10 V, ID = 2.7 A 5 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 50 V, VGS = 0 V,
f = 1 MHz
155 210 pF
Coss Output Capacitance 46 65 pF
Crss Reverse Transfer Capacitance 2.2 5pF
RgGate Resistance 0.9 Ω
Switching Characteristics
td(on) Turn-On Delay Time VDD = 50 V, ID = 2.7 A,
VGS = 10 V, RGEN = 6 Ω
4.5 10 ns
trRise Time 1.3 10 ns
td(off) Turn-Off Delay Time 7.6 16 ns
tfFall Time 2 10 ns
Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 50 V
ID = 2.7 A
3 5 nC
Total Gate Charge VGS = 0 V to 5 V 1.7 3nC
Qgs Total Gate Charge 0.9 nC
Qgd Gate to Drain “Miller” Charge 0.8 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.85 1.3 V
trr Reverse Recovery Time IF = 2.7 A, di/dt = 100 A/μs 34 54 ns
Qrr Reverse Recovery Charge 21 34 nC
NOTES:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting TJ = 25 oC, L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.
a. 78 °C/W when mounte d on
a 1 in2 pad of 2 oz copper b.175 °C/W when mounted on
a minimum pad of 2 oz copper
G
DF
DS
SF
SS
G
DF
DS
SF
SS
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
www.fairchildsemi.com
3
©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. 1.4
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
012345
0
3
6
9
12
VGS = 6.5 V
VGS = 5.5 V
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 6 V
ID, DRAIN CURRENT (A)
VDS, DRA IN TO SOURCE VOLTA GE (V)
On-Region Characteristics Figure 2.
036912
0
1
2
3
4
5VGS = 5 V
PULSE D U RATION = 80 μs
DUTY CYCLE = 0.5% MA X
NORMALIZED
DRAIN TO SOU RC E ON-RESISTANC E
ID, DRAIN CURRENT (A)
VGS = 6 V
VGS = 6.5 V
VGS = 5.5 V
VGS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 2.7 A
VGS = 10 V
NORMALIZED
DRAIN TO SO UR CE ON-RESISTA NC E
TJ, JUNCTIO N TE MPERATURE (oC)
vs Junction Te mperature Figure 4.
45678910
0
100
200
300
400
500
TJ = 125 oC
ID = 2.7 A
TJ = 25 oC
VGS, G ATE TO SOU R C E VO LTAGE (V)
rDS(on), DRAIN T O
SOURCE ON-RESISTANCE (mΩ)
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
2345678
0
3
6
9
12
TJ = 25 oC
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTA GE (V)
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
20
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
www.fairchildsemi.com
4
©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. 1.4
Figure 7.
01234
0
2
4
6
8
10
ID = 2.7 A
VDD = 50 V
VDD = 25 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 75 V
Gate Charge Characteristics Figure 8.
0.1 1 10 100
1
10
100
300
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRA IN TO SO URCE VOLTAG E (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01 0.1 1 2
1
2
3
4
5
6
7
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
Uncl a mped I nduc t ive
Switching Capability Figure 10.
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 6 V
RθJA = 78 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, Ambient TEMPERATURE (oC)
Maximum Continuous Drain
Current vs Ambient Temperature
Figure 11.
0.1 1 10 100 400
0.001
0.01
0.1
1
10
20
10 s
100 us
10 ms
DC
1 s
100 m s
1 m s
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
TH IS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 175 oC/W
TA = 25 oC
Forward Bias Safe
Operating Area Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
0.5
1
10
100
300 SINGLE PULSE
RθJA = 175 oC/W
TA = 25 oC
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
www.fairchildsemi.com
5
©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. 1.4
Figure 13. Juncton-to-Ambient Transient Thermal Response Curve
10-4 10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
RθJA = 175 oC/W
DUTY CYC L E-D ESCENDING ORD ER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0. 2
0. 1
0. 0 5
0. 0 2
0. 0 1 PDM
t1t2
NOTES:
DUTY F ACT O R: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25 °C unless otherwise noted
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO JEDEC MO-193.
VAR. AA, ISSUE E.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C PACKAGE LENGTH DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.25mm PER END. PACKAGE WIDTH
DOES NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS
ARE DETERMINED AT DATUM H.
D) DRAWING FILE NAME: MKT-MA06AREVF
1.00
0.70
0.10
0.00
8°
0°
SEATING PLANE
0.60 REF
0.55
0.35
SCALE: 50X
DETAIL A
SEE DETAIL A
GAGE PLANE
0.25
1.10 MAX
0.20
0.08
0.950.95
3.00
2.80
0.70 MIN
LAND PATTERN RECOMMENDATION
3.00
2.60
0.50
0.30
1.90
0.95
1.70
1.50
1.00 MIN
2.60
SYMM
C
L
(0.30)
1
6
3
4
C
A B
C
0.20 M
0.10
A
B
H
C
C
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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