TSHA6500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): O 5 * Peak wavelength: p = 875 nm * High reliability * Angle of half intensity: = 24 * Low forward voltage * Suitable for high pulse current operation 94 8389 * Good spectral matching with Si photodetectors * Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC DESCRIPTION and in * Halogen-free according to IEC 61249-2-21 definition The TSHA6500 is an infrared, 875 nm emitting diode in GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS * Infrared remote control and free air data transmission systems with comfortable radiation angle * This emitter is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) 30 24 875 600 TSHA6500 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-13/4 TSHA6500 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 s IFM 200 Surge forward current tp = 100 s IFSM 2.5 A PV 180 mW Power dissipation Junction temperature Tj 100 C Operating temperature range Tamb - 40 to + 85 C Storage temperature range Tstg - 40 to + 100 C t 5 s, 2 mm from case Tsd 260 C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified Document Number: 81022 Rev. 2.0, 06-Oct-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSHA6500 Infrared Emitting Diode, 875 nm, GaAlAs Vishay Semiconductors 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 10 21142 20 30 40 50 60 70 80 0 90 100 0 Tamb - Ambient Temperature (C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA MIN. TYP. MAX. UNIT VF 1.5 1.8 V VF 2.8 3.5 TKVF - 1.6 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 16 30 128 V mV/K 100 A 48 mW/sr 20 pF IF = 1 A, tp = 100 s Ie 240 mW/sr IF = 100 mA, tp = 20 ms e 24 mW IF = 20 mA TKe - 0.7 %/K 24 deg nm Angle of half intensity Peak wavelength IF = 100 mA p 875 Spectral bandwidth IF = 100 mA 80 nm Temperature coefficient of p IF = 100 mA TKp 0.2 nm/K IF = 100 mA tr 600 ns IF = 1 A tr 300 ns IF = 100 mA tf 600 ns tf 300 ns d 2.2 mm Rise time Fall time IF = 1 A Virtual source diameter Note Tamb = 25 C, unless otherwise specified www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81022 Rev. 2.0, 06-Oct-09 TSHA6500 Infrared Emitting Diode, 875 nm, GaAlAs Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 1000 Ie - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 1 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 94 8003 100 104 Fig. 6 - Radiant Intensity vs. Forward Current 1000 tp = 100 s tp/T= 0.001 10 3 10 2 100 10 1 0.1 0 1 2 3 4 V F - Forward Voltage (V) 94 8005 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 8015 e 10 4 Fig. 7 - Radiant Power vs. Forward Current Fig. 4 - Forward Current vs. Forward Voltage 1.2 1.6 1.1 1.2 I e rel; e rel IF = 10 mA 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 101 102 103 IF - Forward Current (mA) 948746-1 e - Radiant Power (mW) IF - Forward Current (mA) TSHA 6500 10 2 10 4 VF rel - Relative Forward Voltage (V) 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 1 100 20 40 60 80 Tamb - Ambient Temperature (C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Document Number: 81022 Rev. 2.0, 06-Oct-09 0 - 10 0 10 100 94 8020 50 100 140 Tamb - Ambient Temperature (C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSHA6500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 0 I e rel - Relative Radiant Intensity e - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA e ( ) rel = e ( ) / e ( p ) 0 780 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 980 880 0.6 - Wavelenght (nm) 94 8000 10 0.4 0.2 0 0.2 0.4 0.6 94 8016 e Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters O 5.8 0.15 C R2.49 (sphere) (4.4) 35.2 0.55 < 0.7 8.7 0.3 7.7 0.15 A Area not plane O 5 0.15 1 min. + 0.2 0.6 - 0.1 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5259.08-4 Issue: 3; 19.05.09 14436 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81022 Rev. 2.0, 06-Oct-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1