Document Number: 81022 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 2.0, 06-Oct-09 1
Infrared Emitting Diode, 875 nm, GaAlAs
TSHA6500
Vishay Semiconductors
DESCRIPTION
The TSHA6500 is an infrared, 875 nm emitting diode in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8389
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
TSHA6500 30 ± 24 875 600
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHA6500 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 2.5 A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81022
2Rev. 2.0, 06-Oct-09
TSHA6500
Vishay Semiconductors Infrared Emitting Diode, 875 nm,
GaAlAs
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
200
01020304050607080 90 100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 230 K/W
0
20
40
60
80
100
120
0 1020304050607080 90 100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V
IF = 1 A, tp = 100 µs VF2.8 3.5 V
Temperature coefficient of VFIF = 100 mA TKVF - 1.6 mV/K
Reverse current VR = 5 V IR100 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj20 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie16 30 48 mW/sr
IF = 1 A, tp = 100 µs Ie128 240 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe24mW
Temperature coefficient of φeIF = 20 mA TKφe- 0.7 %/K
Angle of half intensity ϕ± 24 deg
Peak wavelength IF = 100 mA λp875 nm
Spectral bandwidth IF = 100 mA Δλ 80 nm
Temperature coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr600 ns
IF = 1 A tr300 ns
Fall time IF = 100 mA tf600 ns
IF = 1 A tf300 ns
Virtual source diameter d 2.2 mm
Document Number: 81022 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 2.0, 06-Oct-09 3
TSHA6500
Infrared Emitting Diode, 875 nm,
GaAlAs Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
tp- Pulse Duration (ms)
94 8003
100
101
101
10-1
10-1 100102
10-2
tp/T=0.01
IFSM = 2.5 A (single pause)
0.05
0.1
0.2
0.5
I- Forward Current (A)
F
VF- Forward Voltage (V)
94 8005
101
102
103
104
tp = 100 µs
tp/T= 0.001
43210
I- Forward Current (mA)
F
0.7
0.8
0.9
1.0
1.1
1.2
VF rel - Relative Forward Voltage (V)
94 7990 Tamb - Ambient Temperature (°C)
100806040200
IF = 10 mA
IF - Forward Current (mA)
948746-1
103
101102104
100
1
10
100
1000
Ie - Radiant Intensity (mW/sr)
TSHA 6500
- Radiant Power (mW)
e
IF- Forward Current (mA)
94 8015 e
103
101102104
100
0.1
1
10
1000
100
Φ
- 10 10 500 100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
140
94 8020
I
F
= 20 mA
Φ
T
amb
- Ambient Temperature (°C)
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81022
4Rev. 2.0, 06-Oct-09
TSHA6500
Vishay Semiconductors Infrared Emitting Diode, 875 nm,
GaAlAs
Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
780880
λ- Wavelenght (nm)
980
94 8000
- Relative Radiant Power
e
0
0.25
0.5
0.75
1.0
1.25
I
F
= 100 mA
pe
Φ
ee
)/
λ
()
λ
()
rel
=
λΦΦ (
Φ
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
erel
0.6
94 8016 e
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
35.2 ± 0.55
Ø 5 ± 0.15
Area not plane
technical drawings
according to DIN
specifications
6.544-5259.08-4
Issue: 3; 19.05.09
14436
< 0.7
2.54 nom.
8.7 ± 0.3
AC
1 min.
(4.4)
0.5 + 0.15
- 0.05
Ø 5.8 ± 0.15
7.7 ± 0.15
0.6 + 0.2
- 0.1
R2.49 (sphere)
0.5 + 0.15
- 0.05
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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