MMST918 / PN918
Transistors
1/2
NPN High Frequency Transistor
MMST918 / PN918
zFeatures
1) High current gain-bandwid th product f
T
=600MHz
zPackage, marking, and p ackaging specifications
Part No. MMST918
SMT3
RVX
T146
3000
PN918
TO-92
−
T93
3000
Packaging type
Marking
Code
Basic ordering unit
(pieces)
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
30
15
3
50
150
−55 to +150
Unit
V
V
V
A
W
W
P
C
0.2
0.310
MMST918
PN918
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
zExternal dimensions (Unit : mm)
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
MMST918
PN918
0
∼
0.1
2.8
±
0.2
1.6
0.3 ∼ 0.6
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
+
0.2
−
0.1
−0.1
+
0.2
+
0.1
−0.06
+
0.1
−0.05
(2)
(1)
(3)
4.8
±
0.2
(12.7Min.)
2.5Min.
4.8
±
0.2 3.7
±
0.2
50.45 2.3
0.5
±
0.1
−
0.05
+0.15
2.5+0.3
−
0.1
(1) (2) (3)
All terminals have same dimensions
zElectrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
30
15
3.0
−
−
−
−
−
−
−
−
−
−
0.01
1.0
V
V
V
µA
µA
IC=1.0µA
IC=3.0mA
IE=10µA
VCB=15V
VCB=15V , IE=0 , Ta=150°C
VBE(sat) −−1.0 V
VCE(sat) −−0.4 V IC/IB=10mA/1mA
IC/IB=10mA/1mA
−hFE 20 −− IC=3.0mA , VCE=1.0V
fT
Cob
600
−
−
−
−
1.7 MHz
pF IC=4.0mA , VCE=10V, f=100MHz
VCB=10V , IE=0 , f=140kHz
−−3.0 pF VCB=0 , IE=0 , f=140kHz
Cib −−2.0 pF VEB=0.5V , IC=0 , f=140kHz
NF −−6.0 dB IC=1.0mA , VCE=6.0V ,RG=400Ω , f=60MHz
VCB=12V , IC=6.0mA , f=200MHz
Gpe 15 −−dB
Pout 30 −−mW VCB=15V , IC=8.0mA , f=500MHz
VCB=15V , IC=8.0mA , f=500MHz
η25 −−%
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Emitter input capacitance
Noise figure
Power gain
Output power
Collector efficiency
MMST918 / PN918
Transistors
2/2
zElectrical characteristic curves
0
10
20
2
0
010
I
B
=0µA
20µA
40µA
60µA
80µA
100µA
120µA
140µA
160µA
180µA
Ta=25°C
COLLECTOR CURRENT : Ic (mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Typical output characteristic
s
0.1 0.2 0.5 12 510205010
0
100
200
500
1000
10
20
50
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic (mA)
Ta
=25°C
V
CE
=
10V
Fig.2 DC current gain vs.
collector current
0.1 0.2 0.5 1 2 5 10 20 50 10
0
0.2
0.3
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V
)
COLLECTOR CURRENT : Ic (mA)
Ta=25°C
I
C
/ I
B
=10
Fig.3 Collector-emitter saturation
voltage vs. collector current
0.1 0.2 0.5 1 2 5 10 20 50 10
0
0.8
0.6
1.2
1.0
1.8
1.6
1.4
0.4
0.2
0
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
COLLECTOR CURRENT : Ic (mA)
Ta
=25°C
V
CE
=
10V
Fig.5 Base-emitter 'ON' voltage
vs. collector current
0.1 0.2 0.5 12 510205010
0
1
2
5
10
0.1
0.2
0.5
CAPACITANCE (pF)
REVERSE BIAS VOLTAGE : V (V)
Ta=25°C
f=1MHz
Cob
Fig.6 Capacitance vs.
reverse bias voltage
Cib
0.1 0.2 0.5 1 2 5 10 20 50 10
0
0.8
1.0
1.2
1.4
1.8
1.6
0.2
0.4
0.6
0
BASE EMITTER SATURATION VOLTAGE : VBE(sat)
(V)
COLLECTOR CURRENT : Ic
(mA)
Ta
=25°C
I
C
/ I
B
=
10
Fig.4 Base-emitter saturation voltag
e
vs. collector current
0.1 0.2 0.5 1 2 5 10 20 50 10
5000
2000
1000
500
200
100
50
CURRENT GAIN BANDWIDTH PRODUCT
(MHz
COLLECTOR CURRENT : Ic (mA)
Ta
=25°C
V
CE
=
5V
Fig.7 Current gain bandwidth produc
t
vs. collector current
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.