2N4036G - ON Semiconductor

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol 2N4036 2N4037 Unit

Collector–Emitter Voltage VCEO –65 –40 Vdc

Collector–Base Voltage VCBO –90 –60 Vdc

Emitter–Base Voltage VEBO –7.0 –7.0 Vdc

Base Current IB–0.5 Adc

Collector Current — Continuous IC–1.0 Adc

Continuous Power Dissipation

at or Below TC = 25°C

Linear Derating Factor

PD5.0

28.6 5.0

28.6 Watts

mW/°C

Continuous Power Dissipation

at or Below TA = 25°C

Linear Derating Factor

PD1.0

5.72 1.0

5.72 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to +200 °C

Lead Temperature

1/16″ from Case for 10 Seconds TL230 °C

THERMAL CHARACTERISTICS

Characteristic Symbol 2N4036 2N4037 Unit

Thermal Resistance, Junction to Case R

JC 35 35 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage(1)

(IC = –100 mAdc, IB = 0) 2N4036

2N4037

VCEO(sus) –65

–40 —

—

Vdc

Collector–Base Breakdown Voltage

(IC = –0.1 mAdc) 2N4037 V(BR)CBO –60 — Vdc

Collector Cutoff Current

(VCE = –85 Vdc, VEB = –1.5 Vdc) 2N4036

(VCE = –30 Vdc, VEB = –1.5 Vdc, TC = 150°C) 2N4037

ICEX —

—–0.1

–100

mAdc

Collector Cutoff Current

(VCB = –90 Vdc, IE = 0) 2N4036

(VCB = –60 Vdc, IE = 0) 2N4037

ICBO —

—–1.0

–0.25

µAdc

Emitter Cutoff Current

(VEB = –7.0 Vdc, IC = 0) 2N4036

(VEB = –5.0 Vdc, IC = 0) 2N4037

IEBO —

—–10

–1.0

µAdc

1. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N4036

2N4037

CASE 79–04, STYLE 1

TO–39 (TO–205AD)

 Motorola, Inc. 1997

COLLECTOR

BASE

EMITTER

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2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –10 Vdc) 2N4036

(IC = –1.0 mAdc, VCE = –10 Vdc) 2N4037

(IC = –150 mAdc, VCE = –10 Vdc)(1) 2N4036

2N4037

(IC = –150 mAdc, VCE = –2.0 Vdc)(1) 2N4036

(IC = –500 mAdc, VCE = –10 Vdc)(1) 2N4036

hFE 20

—

140

250

200

—

Collector–Emitter Saturation V oltage (1) 2N4036

(IC = –150 mAdc, IB = –15 mAdc) 2N4037 VCE(sat) —

—–0.65

–1.4 Vdc

Base–Emitter Saturation V oltage (1)

(IC = –150 mAdc, IB = –15 mAdc) 2N4036 VBE(sat) — –1.4 Vdc

Base–Emitter On Voltage(1)

(IC = –150 mAdc, VCE = –10 Vdc) 2N4037 VBE(on) — –1.5 Vdc

SMALL–SIGNAL CHARACTERISTICS

Collector–Base Capacitance

(VCB = –10 Vdc, f = 1.0 MHz) 2N4037 Ccb — 30 pF

Current Gain — High Frequency 2N4036

(IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz) 2N4037 |hfe| 3.0

3.0 —

10 —

SWITCHING CHARACTERISTICS

Rise T ime

(IB1 = –15 mAdc) 2N4036 tr— 70 ns

Storage T ime

(IB2 = –15 mAdc) 2N4036 ts— 600 ns

Fall T ime

(IB2 = –15 mAdc) 2N4036 tf— 100 ns

T urn–On Time

(IB1 = IB2) 2N4036 ton —110 ns

Turn–Off Time

(IB1 = IB2) 2N4036 toff — 700 ns

1. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

300 µs

500 µs

1.0 ms

50 µs

100 µs

DC OPERATION

PULSED OPERATION*9.3

5.0

3.0

2.0

1.0

7.0

hFE, NORMALIZED DC CURRENT GAIN

PT, MAXIMUM TRANSISTOR DISSIPATION (W)

ICBO, COLLECTOR CUTOFF CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

hFE, SMALL–SIGNAL FORWARD

CURRENT TRANSFER RATIO

IC, COLLECTOR CURRENT (A)

–0.1

Figure 1. Current Gain Characteristics versus

Collector–Emitter Voltage

IC, COLLECTOR CURRENT (mA) –75

Figure 2. Dissipation Derating Curve

CASE OR AMBIENT TEMPERATURE (TC OR TA) – °C

7.0

200

TJ, JUNCTION TEMPERATURE (°C) –0.5

VCE(sat), COLLECTOR–T O–EMITTER SATURATION VOLTAGE (V)

–10–5

–400

Figure 3. Typical Collector–Cutoff Current

versus Junction Temperature Figure 4. Typical Saturation–Voltage

Characteristics

–100

IC, COLLECTOR CURRENT (mA) –100

VCE, COLLECTOR–TO–EMITTER VOLTAGE (V)

8.0

–0.01

Figure 5. Typical Small–Signal Beta

Characteristics Figure 6. Maximum Safe Operating Areas

(SOA)

1.0

0.1 –1.0 –10 –100

VCE = –10 V

AMBIENT TEMPERATURE (T A) = 25°C

(AT TA)

(AT TC)

6.0

5.0

4.0

3.0

2.0

1.0

0–25 0 50 100 150 200

–10–6

–10–7

–10–8

–10–9

–10–10 1751501251007550250

COLLECTOR–TO–BASE

VOLTAGE –40 V –20 V

–600

–200

0–0.15 –0.25 –0.35

AMBIENT TEMPERATURE (T A) = 25°C

COLLECTOR CURRENT (IC) = 10

BASE CURRENT (IB)

–1000–10–1.0

6.0

4.0

2.0

COLLECTOR–T O–EMITTER VOLTAGE

(VCE) = –10 V

FREQUENCY = 20 MHz

AMBIENT TEMPERATURE (T A) = 25°C

CASE TEMPERATURE (TC) = 25°C

(CURVES MUST BE DERATED LINEARLY

WITH INCREASE OF TEMPERATURE)

VCEO MAX = 40 V

(2N4037)

VCEO MAX = –65 V

(2N4036)

*FOR SINGLE

NONREPETITIVE PULSE

–0.1

1.0

–10–1.0

IC MAX.

(CONTINUOUS) NORMALIZED

POWER

MULTIPLIER

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4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 079–04

(TO–205AD)

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION J MEASURED FROM DIMENSION A

MAXIMUM.

4. DIMENSION B SHALL NOT VARY MORE THAN

0.25 (0.010) IN ZONE R. THIS ZONE

CONTROLLED FOR AUTOMATIC HANDLING.

5. DIMENSION F APPLIES BETWEEN DIMENSION

P AND L. DIMENSION D APPLIES BETWEEN

DIMENSION L AND K MINIMUM. LEAD

DIAMETER IS UNCONTROLLED IN DIMENSION

P AND BEYOND DIMENSION K MINIMUM.

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

SEATING

PLANE

D3 PL

–T–

–A–

–H–

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.335 0.370 8.51 9.39

B0.305 0.335 7.75 8.50

C0.240 0.260 6.10 6.60

D0.016 0.021 0.41 0.53

E0.009 0.041 0.23 1.04

F0.016 0.019 0.41 0.48

G0.200 BSC 5.08 BSC

H0.028 0.034 0.72 0.86

J0.029 0.045 0.74 1.14

K0.500 0.750 12.70 19.05

L0.250 ––– 6.35 –––

M45 BSC 45 BSC

P––– 0.050 ––– 1.27

R0.100 ––– 2.54 –––

0.36 (0.014) H M

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2N4036/D

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