MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N4036 2N4037 PNP Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector - Emitter Voltage VCEO - 65 - 40 Vdc Collector - Base Voltage VCBO - 90 - 60 Vdc Emitter - Base Voltage VEBO - 7.0 - 7.0 Vdc Base Current IB - 0.5 Adc Collector Current -- Continuous IC - 1.0 Adc Continuous Power Dissipation at or Below TC = 25C Linear Derating Factor PD Continuous Power Dissipation at or Below TA = 25C Linear Derating Factor PD Operating and Storage Junction Temperature Range 5.0 28.6 Watts mW/C 1.0 5.72 1.0 5.72 Watts mW/C - 65 to +200 C TL 230 C 2 1 CASE 79-04, STYLE 1 TO-39 (TO-205AD) 5.0 28.6 TJ, Tstg Lead Temperature 1/16 from Case for 10 Seconds 3 LAST ORDER 23/09/99 LIFETIME BUY Rating THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol 2N4036 2N4037 Unit RqJC 35 35 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max - 65 - 40 -- -- - 60 -- -- -- - 0.1 - 100 -- -- - 1.0 - 0.25 -- -- - 10 - 1.0 Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage(1) (IC = - 100 mAdc, IB = 0) VCEO(sus) 2N4036 2N4037 Collector - Base Breakdown Voltage (IC = - 0.1 mAdc) 2N4037 Collector Cutoff Current (VCE = - 85 Vdc, VEB = - 1.5 Vdc) (VCE = - 30 Vdc, VEB = - 1.5 Vdc, TC = 150C) 2N4036 2N4037 Collector Cutoff Current (VCB = - 90 Vdc, IE = 0) (VCB = - 60 Vdc, IE = 0) 2N4036 2N4037 Emitter Cutoff Current (VEB = - 7.0 Vdc, IC = 0) (VEB = - 5.0 Vdc, IC = 0) 2N4036 2N4037 1. Pulse Test: Pulse Width V(BR)CBO Vdc ICEX mAdc Adc ICBO Adc IEBO v 300 ms, Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 Vdc 1 2N4036 2N4037 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 2N4036 20 -- Unit -- 2N4037 15 -- (IC = -150 mAdc, VCE = -10 Vdc)(1) 2N4036 2N4037 40 50 140 250 (IC = -150 mAdc, VCE = - 2.0 Vdc)(1) (IC = - 500 mAdc, VCE = -10 Vdc)(1) 2N4036 2N4036 20 200 20 -- VCE(sat) -- -- - 0.65 - 1.4 Vdc VBE(sat) -- -1.4 Vdc VBE(on) -- - 1.5 Vdc Ccb -- 30 pF |hfe| 3.0 3.0 -- 10 -- tr -- 70 ns ts -- 600 ns tf -- 100 ns ton -- 110 ns toff -- 700 ns Collector - Emitter Saturation Voltage(1) (IC = - 150 mAdc, IB = - 15 mAdc) LIFETIME BUY hFE Base - Emitter Saturation Voltage(1) (IC = - 150 mAdc, IB = - 15 mAdc) Base - Emitter On Voltage(1) (IC = - 150 mAdc, VCE = - 10 Vdc) 2N4036 2N4037 2N4036 2N4037 SMALL- SIGNAL CHARACTERISTICS Collector-Base Capacitance (VCB = - 10 Vdc, f = 1.0 MHz) 2N4037 Current Gain -- High Frequency (IC = - 50 mAdc, VCE = - 10 Vdc, f = 20 MHz) 2N4036 2N4037 SWITCHING CHARACTERISTICS Rise Time (IB1 = - 15 mAdc) 2N4036 Storage Time (IB2 = - 15 mAdc) 2N4036 Fall Time (IB2 = - 15 mAdc) 2N4036 Turn-On Time (IB1 = IB2) 2N4036 Turn-Off Time (IB1 = IB2) 2N4036 1. Pulse Test: Pulse Width 2 v 300 ms, Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST ORDER 23/09/99 DC Current Gain (IC = - 0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) LAST SHIP 21/03/00 ON CHARACTERISTICS 1.0 0.1 - 0.1 - 1.0 - 10 IC, COLLECTOR CURRENT (mA) 6.0 5.0 4.0 3.0 2.0 (AT TC) 1.0 0 - 75 - 100 - 25 0 50 100 150 200 CASE OR AMBIENT TEMPERATURE (TC OR TA) - C -10- 7 -10- 8 -10- 9 -10-10 0 25 50 Figure 2. Dissipation Derating Curve IC, COLLECTOR CURRENT (mA) COLLECTOR-TO-BASE VOLTAGE - 40 V - 20 V -10- 6 COLLECTOR CURRENT (IC) = 10 BASE CURRENT (IB) - 600 AMBIENT TEMPERATURE (TA) = 25C - 400 - 200 0 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (C) - 0.15 - 0.25 - 0.35 - 0.5 VCE(sat), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (V) Figure 3. Typical Collector-Cutoff Current versus Junction Temperature 10 COLLECTOR-TO-EMITTER VOLTAGE (VCE) = -10 V FREQUENCY = 20 MHz AMBIENT TEMPERATURE (TA) = 25C 8.0 6.0 4.0 Figure 4. Typical Saturation-Voltage Characteristics 1.0 IC, COLLECTOR CURRENT (A) hFE, SMALL-SIGNAL FORWARD CURRENT TRANSFER RATIO I CBO , COLLECTOR CUTOFF CURRENT (mA) LIFETIME BUY Figure 1. Current Gain Characteristics versus Collector-Emitter Voltage -10- 5 - 0.1 IC MAX. (CONTINUOUS) 50 s 100 s 300 s 500 s 1.0 ms DC OPERATION - 1.0 - 10 - 100 - 1000 IC, COLLECTOR CURRENT (mA) Figure 5. Typical Small-Signal Beta Characteristics Motorola Small-Signal Transistors, FETs and Diodes Device Data PULSED OPERATION* 9.3 7.0 5.0 CASE TEMPERATURE (TC) = 25C (CURVES MUST BE DERATED LINEARLY WITH INCREASE OF TEMPERATURE) VCEO MAX = 40 V (2N4037) 2.0 0 LAST SHIP 21/03/00 VCE = - 10 V AMBIENT TEMPERATURE (TA) = 25C (AT TA) 7.0 - 0.01 - 1.0 NORMALIZED POWER MULTIPLIER 3.0 2.0 1.0 VCEO MAX = - 65 V (2N4036) *FOR SINGLE NONREPETITIVE PULSE - 100 - 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 6. Maximum Safe Operating Areas (SOA) 3 LAST ORDER 23/09/99 hFE , NORMALIZED DC CURRENT GAIN 10 PT, MAXIMUM TRANSISTOR DISSIPATION (W) 2N4036 2N4037 2N4036 2N4037 B C -T- E SEATING PLANE L F K P D 3 PL 0.36 (0.014) M T A H M 2 -H- 1 3 G STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR M LIFETIME BUY M J CASE 079-04 (TO-205AD) ISSUE N DIM A B C D E F G H J K L M P R INCHES MIN MAX 0.335 0.370 0.305 0.335 0.240 0.260 0.016 0.021 0.009 0.041 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.045 0.500 0.750 0.250 --- 45 _BSC --- 0.050 0.100 --- MILLIMETERS MIN MAX 8.51 9.39 7.75 8.50 6.10 6.60 0.41 0.53 0.23 1.04 0.41 0.48 5.08 BSC 0.72 0.86 0.74 1.14 12.70 19.05 6.35 --- 45 _BSC --- 1.27 2.54 --- Motorola reserves the right to make changes without further notice to any products herein. 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DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. LAST SHIP 21/03/00 PACKAGE DIMENSIONS