QST8
Transistors
Rev.A 1/2
General purpose amplification (
−
12V,
−
1.5A)
QST8
zA pplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) : max. −200mV
At IC = −500mA / IB = −25mA
zExternal dimensions (Unit : mm)
ROHM : TSMT6
Each lead has same dimensions
Abbreviated symbol : T08
0.16
0.85 2.9
2.8
1.6
0.4
(1)
(5)
(3)
(6)
(2)
(4)
zA bsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
−15
−12
−6
−1.5
500
150
−55 to +150
−3
∗1
Unit
V
V
V
A
A
mW/TOTAL
°C
°C
∗2
1.25 W/TOTAL
∗3
0.9 W/ELEMENT
∗3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm
×
25mm
×
0.8mm ceramic substrate
t
zEquiva lent circuit
(1) (2) (3)
Tr1Tr2
(5)(6) (4)
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
fT−400 −MHz
BVCBO −15 −−V
BVCEO −12 −−V
BVEBO −6−−V
ICBO −−
−100 nA
IEBO −−
−100 nA
VCE(sat) −−85 −200 mV
hFE 270 −680 −
Cob −12 −pF
Transition frequency
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Corrector output capacitance
∗Pulsed
VCB= −10V, IE=0A, f=1MHz
VCE= −2V, IE=200mA, f=100MHz
IC= −10µA
IC= −1mA
IE= −10µA
VCB= −15V
VEB= −6V
IC= −500mA, IB= −25mA
VCE= −2V, IC= −200mA
∗
∗
QST8
Transistors
Rev.A 2/2
zPackaging specifications
QST8
TR
3000
Type Package
Code Taping
Basic ordering unit (pieces)
zElectrical characteristic curves
−0.001 −0.01 −0.1 −1−10
COLLECTOR CURRENT : I
C
(A)
10
DC CURRENT GAIN : h
FE
1000
100
Ta=100°C
Ta= −40°C
Ta=25°C
V
CE
= −2V
Pulsed
Fig.1 DC current gain
vs. collector current
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
0.1
1
10
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
Ta=25°C
Ta=100°C
Ta=25°C
Ta=100°C
V
BE (sat)
V
CE (sat)
I
C
/ I
B
=20/1
Pulsed
Ta= −40°C
Ta= −40°C
Fig.2
Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
−0.001 −0.01 −0.1 −1−10
COLLECTOR CURRENT : I
C
(A)
−0.001
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
−1
−0.1
−0.01
I
C
/ I
B
=10
I
C
/ I
B
=20
I
C
/ I
B
=50
Ta=25°C
Pulsed
Fig.3
Collector-emitter saturation voltage
vs. collector current
0−0.5 −1.0 −1.5
BASE TO EMITTER CURRENT : V
BE
(V)
−0.001
COLLECTOR CURRENT : I
C
(A)
−10
−1
−0.1
−0.01
V
CE
=2V
Pulsed
Ta=100°C
Ta=25°C
Ta= −40°C
Fig.4 Grounded emitter propagation
characteristics
0.001 0.01 0.1 1 10
EMITTER CURRENT : I
E
(A)
10
TRANSITION FREQUENCY : f
T
(MHz)
1000
100
Ta=25°C
V
CE
= −2V
Pulsed
Fig.5 Gain bandwidth product
vs. emitter current
−0.001 −0.01 −0.1 −1−10
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
1
SWITCHING TIME : (ns)
1000
100
10
tstg
tdon
tf
tr
IC=20 IB1= −20 IB2
Ta=25°C
Pulsed
−0.1 −1−10 −100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
1
10
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
100
Ta=25°C
f=1MHz
IE=0A
Cib
Cob
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
