Semiconductor Group 1
NPN Silicon AF Transistors BC 337
BC 338
5.91
Type Marking Package1)
Pin Configuration
BC 337
BC 337-16
BC 337-25
BC 337-40
BC 338
BC 338-16
BC 338-25
BC 338-40
Q62702-C313
Q62702-C313-V3
Q62702-C313-V1
Q62702-C313-V2
Q62702-C314
Q62702-C314-V1
Q62702-C314-V2
Q62702-C314-V3
– TO-92
123
Ordering Code
C B E
1) For detailed information see chapter Package Outlines.
●High current gain
●High collector current
●Low collector-emitter saturation voltage
●Complementary types: BC 327, BC 328 (PNP)
1
2
3
Semiconductor Group 2
BC 337
BC 338
Maximum Ratings
Parameter Symbol BC 337 Unit
Collector-emitter voltage VCE0 45 V
Collector-base voltage VCB0 50
Emitter-base voltage VEB0
Collector current ICmA
Base current IBmA
Total power dissipation, TC= 66 ˚C Ptot mW
Junction temperature Tj˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Peak collector current ICM A
Junction - case1) Rth JC ≤ 135
Peak base current IBM
BC 338
25
30
5
800
100
625
150
1
200
Values
1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 3
BC 337
BC 338
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
–
DC current gain1)
I
C = 100 mA; VCE = 1 V BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
I
C = 300 mA; VCE = 1 V BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
hFE
100
160
250
60
100
170
160
250
350
–
–
–
250
400
630
–
–
–
VCollector-emitter breakdown voltage
I
C = 10 mA BC 337
BC 338
V(BR)CE0
45
25 –
––
–
nA
nA
µA
µA
Collector cutoff current
VCB = 25 V BC 338
VCB = 45 V BC 337
VCB = 25 V, TA = 150 ˚C BC 338
VCB = 45 V, TA = 150 ˚C BC 337
ICB0 –
–
–
–
–
–
–
–
100
100
10
10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 100 µABC 337
BC 338
V(BR)CB0
50
30 –
––
–
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 5––
V
Collector-emitter saturation voltage1)
I
C = 500 mA; IB = 50 mA VCEsat – – 0.7
Base-emitter saturation voltage
I
C = 500 mA; IB = 50 mA VBEsat ––2
nAEmitter cutoff current
VEB = 4 V IEB0 – – 100
1) Pulse test: t≤300 µs, D≤ 2%.
Semiconductor Group 4
BC 337
BC 338
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
MHzTransition frequency
I
C = 50 mA, VCE = 5 V, f = 20 MHz fT– 170 –
UnitValuesParameter Symbol
min. typ. max.
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –8–
Input capacitance
VEB = 0.5 V, f = 1 MHz Cibo –60–
Semiconductor Group 5
BC 337
BC 338
Total power dissipation Ptot =f(TA;TC)
Collector current IC = f (VBE)
VCE = 1 V
Permissible pulse load RthJA =f(tp)
Collector cutoff current ICB0 =f(TA)
VCB = 45 V
Semiconductor Group 6
BC 337
BC 338
Transition frequency fT=f(IC)
f = 20 MHz, TA=25 ˚C
Base-emitter saturation voltage
VBEsat =f(IC)
hFE = 10
DC current gain hFE =f(IC)
VCE = 1 V
Collector-emitter saturation voltage
VCEsat =f(IC)
hFE = 10
