SIEMENS PNP Silicon AF Transistors BCX 69 @ For general AF applications @ High collector current j @ High current gain 2 @ Low collector-emitter saturation voltage 3 @ Complementary type: BCX 68 (NPN) 2 PS05162 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 BCX 69 - Q62702-C1714 B Cc E | SOT-89 BCX 69-10 CF Q62702-C1867 BCX 69-16 CG Q62702-C1868 BCX 69-25 CH Q62702-C1869 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Voto 20 Vv Collector-base voltage Vcpo 25 Emitter-base voltage VeBo 5 Collector current Ic 1 A Peak collector current Tom 2 Base current Ip 100 mA Peak base current Tem 200 Total power dissipation, 7s = 130 C Prot 1 WwW Junction temperature Tj 150 C Storage temperature range Tstg ~65...+ 150 Thermal Resistance Junction - ambient 2) Rin sa <75 KAW Junction - soldering point Rth ss < 20 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv/6 cm? Cu. 903 5.91 Semiconductor GroupSIEMENS BCX 69 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit in. | typ. | max. DC characteristics Collector-emitter breakdown voltage Ic=30mA Veeryceo 20 Collector-base breakdown voltage Ic=10 pA Vipryceo 25 Emitter-base breakdown voltage Te=1pA VipryeBo 5 Collector cutoff current Ves = 25 V Ves = 25 V, Ta = 150 C Iceo 100 100 Emitter cutoff current Ves =5V Teo 10 B/SS DC current gain) Ic=5 mA, Vee=10V Ic = 500 mA, Vee=1V BCX 69 BCX 69-10 BCX 69-16 BCX 69-25 Io=1A, Vee=1V Are 100 160 250 375 160 250 375 Collector-emitter saturation voltage) Ie=1A,ie= 100 mA VecEsat 0.5 Base-emitter voltage) Ie =5 mA, Vee= 10V Io=1A,Vee=1V Vee Ac characteristics Transition frequency Ic = 100 mA, Vee = 5 V, f= 20 MHz 100 MHz 1) Pulse test: 7s 300 us, D = 2%. Semiconductor GroupSIEMENS BCX 69 Total power dissipation Pio = f (Ta*; Ts) Transition frequency fr = f (/c) * Package mounted on epoxy Vcee=5V 12 BCX 69 EHPO046S 103 BCX 69 EMPOD469 W MHz Prot 5 1.0 f 0.8 0.6 107 0.4 0.2 10! 0.05 50 100 C 15C 10 5 10! 5 10? ma 105 = Wk ede Permissible pulse load Prot ma/Proc =f (fp) Collector cutoff current /ceo = f (Ta) Vea = 25V BCX 69 EHeOO470 105 x8 EHPOOd71 nA tao 104 5 105 5 Ole rit oT N > TT i Ji 0 io 1075 1074 1073 107? 5s 10 0 50 100 C: 150 + f, Y, Semiconductor Group 905SIEMENS BCX 69 Base-emitter saturation voltage Ic = f (Vaeset) hee = 10 104 BCX 69 EHPO0472 mA 10 5 10 0 0.2 04 06 O08 1.01.2 Yor sat Collector current /c = f (Vee) Vee=1V 104 BCX 69 EHPO0474 mA 10 0 02 04 06 08 1.0V1.2 Vor Semiconductor Group Collector-emitter saturation voltage Ic = f (Vesa) hre = 10 40 4 BCX 69 EHP00473 mA f 0 0.2 0.4 0.6 V 0.8 , CE sat DC current gain fre = f (/c) Ve=1V 103 BCX 69 EHPO0475 5 Age 102 10! 10 10 386510! 5102 5105 ma 104 ~ i,