NEC / PNP SILICON TRANSISTOR 2SA733 DESCRIPTION The 2SA733 is designed for use in driver stage of AF amplifier. PACKAGE DIMENSIONS in millimeters {inches} FEATURES High hee and Excellent Linearity : 200 TYP. 5.2 MAX. (0.204 MAX.) hee (Voce =6.0 V, Ic =-1.0 mA) 23 ABSOLUTE MAXIMUM RATINGS ae Maximum Temperatures . 3s . Storage Temperature .............. -55 to +125 C (o0t8) ze Junction Temperature ........... +125 C Maximum , WT og ne Maximum Power Dissipation (Ta= 25 C) 254 || 3 2 ye Total Power Dissipation ..............0. 250 mW io RS Maximum Voltages and Currents (Ta= 25 C} (0.05) we Vecgo Collector to Base Voltage .......... -60 V 1 2 3 33 Vceo Collector to Emitter Voltage ........ 50 Vv Ss Vepo Emitter to Base Voltage ........... 6.0 V 1. EMITTER EIAJ : SC-43B lo Collector Current .....-.0.0--+--- 100mA 3 base lec. : pags Ip Base Current .........0002 08 eeae 20 mA ELECTRICAL CHARACTERISTICS (Ta=25 C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS NFE DC Current Gain 90 200 600 VcE=-6.0 V, Ip=-1.0mA NF Noise Figure 6.0 20 dB Vgg=-6.0 V, Ic =-0.3 mA, RG=10 kQ, f=100 Hz fy Gain Bandwidth Product 100 180 MHz VcEe=-6.0 V, 1g =10 mA Cob Output Capacitance 45 6.0 pF Vcege-10 V, Ie=0, f=1.0 MHz IcBpo Cotlector Cutoff Current ~ 0.1 wA- VceRp=-60V, lp =0 lEBO Emitter Cutoff Current -0.1 uA Veg=5.0 V, 1c =0 Vee Base to Emitter Voltage -0.58 0.62 0.68 Vv VcE=-6.0 V, lc=-1.0 mA VcEisat) Collector Saturation Voltage -0.18 -0.3 v t=- 100 mA, |lg=-10 mA Classification of hee Rank R Qa P K Range 90 180 135 270 200 400 300 600 hre Test Conditions : Vcg =-6.0 V, Ic=-1.0 mA 992SA733 TYPICAL CHARACTERISTICS (Ta=25 C unless otherwise noted} TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 Free Ar = = 250 | Cc = 200 ag 2 a @ 150 o 5 & 100 3 2 50 I KE a 0 25 50 75 100 125 150 Ta Ambient Temperature - C BOC CURRENT GAIN vs, COLLECTOR CURRENT 1000 500 & o oO = 200 a7 2 5 100 3 & 50 { ud uw = 20 10 VBE (sat) ~ Base Saturation VoltageV -0.1-02 -05 -1 7-2 ~ -10 -20 I-- Collector Current-- mA COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT -2 I= 10-1g -1 -05 -0.2 0.05 ~0.02 VCE(sat) Collector Saturation VoitageV 1 2 -5 \~- Collector Current ~ mA -10 -26 50 -- 100 100 -50 - 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 ly = -a0 2 5 7~60 oO s oO g 40 Ip=0.2 mA a Oo -20 9 -10 Voge Collector to Emitter Voltage~V 0 -0.2 -04 -06 ~0.8 DC CURRENT GAIN vs. COLLECTOR CURRENT 200 hpe ~~ DC Current Gain Phy I -06-1 -2 -& -10 -20 50-100 I Collector Current mA 10 -0.1-0.5 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT ns 500 x = o Vee= -60V 3 a -10V = 100 2 = z & 50h: s 5 - 20 . ey 2 5 10 20 50 100 te Emitter Current~ mA NEC COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -10 0 -8 < 8 | < wo 5 76 3 5 8 8 4 2 | 2 -2 IB=-3 uA 0 Qo ~10 -20 30 40 50 Vce ~ Collector to Emitter Voltage --V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Yop = 6.0V ~100 CE ~50 t 0 | ~20 thof hb. = ofath -10 8 -5.0 2 Oo 2-20 o o 7 7-10 2 -0.5 -0.2 ~0.1 -04 -05 Vge~ Base to Emitter VoltageV -06 ~07 -08 -09 -10 OUTPUT CAPACITANCE vs. REVERSE VOLTAGE f= Cob Output Capacitance ~ pF 2. 10 Lp -10 -20 - -10 -20 50 100 Veg Collector to Base VoitageVRg- Source Resistance 2 HeNormalized h-Parameters NEC 50 k 20 k Wk uw oa = ny ~ oo NORMALIZED h-PARAMETERS vs. EMITTER CURRENT 100 VCE = 6.0 V, IE=1.0 mA, f= 2.0 kHz 50 hig =5.5 KE, bre =7.5 x 10-4 =205. hoe =28 wS 20 hre A 01302 05 1 2 5 10 20 50 10 le Emitter Current mA NOISE FIGURE MAP 2 w Sixx 8 100 001-002 -00-01 -02 -05-10-20 -50 -10 I Collector Current mA NORMALIZED h-PARAMETERS vs. COLLECTOR TO EMITTER VOLTAGE 100 h- PARAMETERS VCE= 6.0 V.IE=1.0 mA, f 21.0 KHz 50 hie =5.5 kQ, Dre =7.5 Xx 1074 = 205. =28 uS 20 1 05 HeNormalized h-Parameters 0.2 Oi -0.1-02-05-1 -2 -5-10-20 50-100 VcE Collector to Emitter VoltageV NOISE FIGURE MAP 3 50 k 20 k 10 k 5.0 20k 1.0 k Ss, Rg~ Source Resistance Q 200 ey 100 -0.01-002 0.05-01 -02 -O5 -10 -20 -80 -10 i Collector CurrentmA 2SA733 NOISE FIGURE MAP 1 100 k wm o On = oo 85 = ~~ 3 o 8 o _ x Rg Source Resistange Q 8 01 -10 -20 ~10 I~ Collector Current mA NOISE FIGURE MAP 4 8 50 k nN Oo cad 1 k an Qo x Nn Rg7 Source Resistance Q a 6 8 200 100 -0.01-0.02 -0.05 -01-02 -05 -10-20 -50 -10 \e Collector Current mA 101