2N6388 (R) SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ) s ( ct u d o DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium frequency power applications. e t e l 3 Pr 1 2 TO-220 o s b O ) s ( t c INTERNAL SCHEMATIC DIAGRAM u d o r P e t e l o s b O R1 Typ. = 10 K R2 Typ. = 160 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I B = 0) 80 V V CEV Collector-Emitter Voltage (V BE = -1.5V) 80 V V CER Collector-Emitter Voltage (R BE 100) Collector-Emitter Voltage (I B = 0) 80 V V CEO 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC I CM IB P tot T stg Tj Collector Current 10 A Collector Peak Current 15 A Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature August 2000 0.25 A 65 W -65 to 150 o C 150 o C 1/5 2N6388 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.92 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit 0.3 3 mA mA I CEV Collector Cut-off Current (V BE = -1.5V) V CE = 80 V V CE = 80 V I CEO Collector Cut-off Current (I B = 0) V CE = 80 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 5 mA T c = 125 o C V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I C = 200 mA V CER(sus) Collector-Emitter Sustaining Voltage I C = 200 mA R BE = 100 V CEV(sus) Collector-Emitter Sustaining Voltage I C = 200 mA V BE = -1.5V Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 10 mA I B = 100 mA V BE Base-Emitter Voltage IC = 5 A I C = 10 A h FE DC Current Gain IC = 5 A I C = 10 A h fe Small Signal Current Gain IC = 1 A IC = 1 A VF Parallel-diode Forward Voltage I F = 10 A C CBO Collector Base Capacitance IE = 0 I s/b Second Breakdown Collector Current V CE = 25 V E s/b Second Breakdown Energy L = 12 mH V BE = -1.5 V V CE(sat) e t e ol s b O ) s ( t c u d o r P Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Pulsed: Pulse duration = 100ms non repetitive pulse. 2/5 Min. ) s ( ct 80 80 V CE = 3 V V CE = 3 V -O V CE = 3 V V CE = 3 V V CE = 10 V V CE = 10 V V CB = 10 V f = 1MHz f = 1KHz 1000 100 V V 2 3 V V 2.8 4.5 V V 20000 20 1000 f = 1MHz R BE = 100 IC = 4.5 A u d o r P e 80 t e l o bs V 4 V 200 pF 2.6 A 120 mJ 2N6388 Safe Operating Area DC Current Gain ) s ( ct u d o r P e Collector Emitter Saturation Voltage DC Transconductance t e l o ) (s s b O t c u d o r P e s b O t e l o Collector Emitter Saturation Voltage Saturated Switching Characteristics 3/5 2N6388 TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch TYP. 0.107 1.27 0.050 E 0.49 0.70 0.019 F 0.61 0.88 0.024 F1 1.14 1.70 0.044 F2 1.14 1.70 0.044 G 4.95 5.15 0.194 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 L2 16.4 L4 13.0 14.0 L5 2.65 2.95 L6 15.25 15.75 L7 6.2 6.6 L9 3.5 DIA. 3.75 MAX. 3.93 s ( t c 3.85 ) s ( ct 0.034 0.067 bs u d o r P e t e l o 0.511 O ) 0.027 0.067 0.203 0.106 0.409 0.645 0.551 0.104 0.116 0.600 0.620 0.244 0.260 0.137 0.154 0.147 0.151 u d o r P e t e l o s b O P011C 4/5 2N6388 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5