2N6388
SILICON NPN POWER DARLINGTON TRANSISTO R
■STMicr o electronics PREF E RRED
SALESTYPE
■NPN DARLINGTON
■HIGH CURRENT CAPABILITY
■INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The device is a silicon Epitaxial-Base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plas tic package.
It is inteded for use in low and medium frequency
power applications.
®
INT E R NAL SCH E M ATI C DIAG RA M
August 2000
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltag e (IB = 0) 80 V
VCEV Collector-Emitter Voltage (VBE = -1.5V) 80 V
VCER Collector-Emitter Voltage (RBE ≤ 100Ω)80 V
VCEO Collector-Emitter Voltage (IB = 0) 80 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 10 A
ICM Collector Peak Current 15 A
IBBase Current 0.25 A
Ptot Total Dissipation at Tc ≤ 25 oC65 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
R1 Typ. = 10 KΩ R2 Typ. = 160 Ω
123
TO-220
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THERMAL DATA
Rthj-case Thermal Resistance Junction-ca se Max 1.92 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VBE = -1.5V) VCE = 80 V
VCE = 80 V Tc = 125 oC0.3
3mA
mA
ICEO Collector Cut-off
Current (IB = 0) VCE = 80 V 1 mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 5 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA 80 V
VCER(sus)∗Collector-Emitter
Sustaining Voltage IC = 200 mA RBE = 100 Ω80 V
VCEV(sus)∗Collector-Emitter
Sustaining Voltage IC = 200 mA VBE = -1.5V 80 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 5 A IB = 10 mA
IC = 10 A IB = 100 mA 2
3V
V
VBE∗Base-Emitter Voltage IC = 5 A VCE = 3 V
IC = 10 A VCE = 3 V 2.8
4.5 V
V
hFE∗DC Current Ga in IC = 5 A VCE = 3 V
IC = 10 A VCE = 3 V 1000
100 20000
hfe Small Signal Current
Gain IC = 1 A VCE = 10 V f = 1MHz
IC = 1 A VCE = 10 V f = 1KHz 20
1000
VF∗Parallel-diode Forward
Voltage IF = 10 A 4 V
CCBO Collector Base
Capacitance IE = 0 VCB = 10 V f = 1MHz 200 pF
Is/b∗∗ Second Breakdown
Collector Current VCE = 25 V 2.6 A
Es/b Second Breakdown
Energy L = 12 mH RBE = 100 Ω
VBE = -1.5 V IC = 4.5 A 120 mJ
∗ P ulsed: P ulse durat ion = 300 µs, d uty cy cle 1.5 %
∗∗ Pulsed: Pulse duration = 100ms non repetitive pulse.
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Safe O perat ing Area
Collector Emitter Saturation Voltage
Collector Emitter Saturation Voltage
DC Current Ga in
DC Transc onduct ance
Saturated Switching Char acterist ics
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHA NICAL D ATA
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