NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC I GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select high gain mode or low gain mode by low control voltage operation. Within the wide dynamic range from 4.9~5.95GHz, the NJG1148MD7 achieves low noise figure and high linearity with fewer external components. The ESD protection circuits are integrated into the MMIC. They achieve high ESD protection voltage. A small and ultra-thin package of EQFN14-D7 is adopted. I FEATURES G Operating voltage G Low current consumption G G G G G G G High Gain Low Noise figure High IIP3 Low Insertion Loss Few external components Small package size Pb free, Halogen free NC(GND) 14 13 1 GND 12 11 Bypass circuit NC(GND) NC(GND) 2 10 LNA circuit RFIN RFOUT 3 9 Logic circuit GND 4 NC(GND) I TRUTH TABLE VCTL H L NJG1148MD7 3.3V 7.0mA typ. @VDD=3.3V, VCTL=1.8V (LNA mode) 5uA typ. @VDD=3.3V, VCTL=0V (Bypass mode) 12.5dB typ. @VDD=3.3V, VCTL=1.8V (LNA mode) 1.5dB typ. @VDD=3.3V, VCTL=1.8V (LNA mode) +5.0dBm typ. @VDD=3.3V, VCTL=1.8V (LNA mode) 5.0dB typ. @VDD=3.3V, VCTL=0V (Bypass mode) 1pcs. (Bypass Capacitor) EQFN14-D7 (Package size: 1.6mm x 1.6mm x 0.397mm typ.) I PIN CONFIGURATION 1PIN INDEX (Top View) NC(GND) I PACKAGE OUTLINE VDD 8 5 6 7 GND GND VCTL NC(GND) "H"=VCTL(H)"L"=VCTL(L) LNA Circuit Bypass Circuit ON OFF OFF ON Pin Connection 1. NC(GND) 2. RFIN 3. GND 4. NC(GND) 5. GND 6. GND 7. VCTL 8. NC(GND) 9. VDD 10. RFOUT 11. NC(GND) 12. GND 13. NC(GND) 14. NC(GND) Operating mode LNA mode Bypass mode Note: Specifications and description listed in this datasheet are subject to change without notice Ver.2011-11-18 -1- NJG1148MD7 I ABSOLUTE MAXIMUM RATINGS T a=+25C, Zs=Zl=50 ohm PARAMETER CONDITIONS SYMBOL RATINGS UNITS Drain voltage VDD 5.0 V Control voltage VCTL 5.0 V Input power Pin VDD=3.3V +15 dBm Power dissipation PD 4-layer FR4 PCB with through-hole (74.2x74.2mm), Tj=150C 1300 mW Operating temperature Topr -40~+85 C Storage temperature Tstg -55~+150 C I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) VDD=3.3V, T a=+25C, Zs=Zl=50 ohm PARAMETERS SYMBOL MIN TYP MAX UNITS VDD 2.7 3.3 4.5 V Control voltage (High) VCTL(H) 1.6 1.8 4.5 V Control voltage (Low) VCTL(L) 0 0 0.4 V Operating voltage CONDITIONS Operating current1 IDD1 RF OFF, VCTL=1.8V - 7.0 11.0 mA Operating current2 IDD2 RF OFF, VCTL=0V - 5 9 uA Control current ICTL RF OFF, VCTL=1.8V - 6 10 uA -2- NJG1148MD7 I ELECTRICAL CHARACTERISTICS2 (LNA mode) VDD=3.3V, VCTL=1.8V, freq=4900~5950MHz, T a =+25C, Zs=Zl=50 ohm, with application circuit PARAMETERS Small signal gain Noise figure Input power at 1dB gain compression point1 Input 3rd order intercept point1 Input Tx Power at 1dB Gain Compression Point SYMBOL CONDITIONS MIN TYP MAX UNITS Gain Exclude PCB & connector losses *1 9.5 12.5 16.0 dB NF Exclude PCB & connector losses *2 - 1.5 2.2 dB -12.0 -5.0 - dBm 0.0 +5.0 - dBm -17.0 -8.0 - dBm P-1dB (IN)1 IIP3_1 Psat (Tx-1dB) f1=freq, f2=freq+100kHz, PIN=-25dBm Fundamental frequency: f1=5500MHz, Pin=-30dBm Tx frequency: f2=1710MHz, 1940MHz, 2170MHz Input Tx Power at 1dB fundamental Gain compression point Isolation ISL - 35.0 - dB RF IN Return loss1 RLi1 8.0 12.0 - dB RF OUT Return loss1 RLo1 5.0 12.0 - dB *1 Input & output PCB and connector losses: 0.58dB (5500MHz) *2 Input PCB and connector losses: 0.29dB (5500MHz) I ELECTRICAL CHARACTERISTICS3 (Bypass mode) VDD=3.3V, VCTL=0V, freq=4900~5950MHz, T a=+25C, Zs=Zl=50 ohm, with application circuit PARAMETERS Insertion Loss Input power at 1dB gain compression point2 Input 3rd order intercept point2 SYMBOL Loss CONDITIONS Exclude PCB & connector losses *1 P-1dB (IN)2 IIP3_2 f1=freq, f2=freq+100kHz, PIN=-10dBm MIN TYP MAX UNITS - 5.0 7.0 dB -1.0 +10.0 - dBm +3.0 +10.0 - dBm RF IN Return loss2 RLi2 7.0 12.0 - dB RF OUT Return loss2 RLo2 8.0 12.0 - dB *1 Input & output PCB and connector losses: 0.58dB (5500MHz) -3- NJG1148MD7 I TERMINAL INFORMATION No. 1, 4, 8, 11, 13, 14 DESCRIPTION SYMBOL No connected terminal. This terminal is not connected with internal NC(GND) circuit. Please connect this terminal with ground place as close as possible for excellent RF performance. 2 RFIN RF input terminal. This IC integrates an input DC blocking capacitor. 3, 5, 6, 12 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 7 VCTL Control voltage terminal. 9 VDD Supply voltage terminal for LNA and logic circuit. Bypass to ground with capacitor C1 as close as possible to the IC. 10 RFOUT RF output terminal. This IC integrates an input DC blocking capacitor. -4- NJG1148MD7 I ELECTRICAL CHARACTERISTICS (LNA mode) Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit Gain, IDD vs. Pin Pout vs. Pin (f=5500MHz) 15 (f=5500MHz) 15 10 15 5 10 0 Gain (dB) Pout (dBm) P-1dB(OUT)=8.6dBm -5 Pout -10 -15 IDD 0 -20 IDD (mA) 10 5 20 Gain 5 -25 P-1dB(IN)=-2.5dBm -35 -30 -25 -20 -15 -10 P-1dB(IN)=-2.5dBm -5 -5 -40 0 0 -35 -30 -25 Pin (dBm) Gain (dB) Pout, IM3 (dBm) Pout -20 -40 IM3 3.5 13 3 12 2.5 11 2 10 1.5 9 -80 1 NF 8 -20 -15 -10 -5 Pin (dBm) 0 5 0.5 (Exclude PCB, connector losses) IIP3=+6.9dBm -25 0 4 Gain 14 20 -100 -30 -5 15 OIP3=+18.7dBm -60 -10 Gain, NF vs. frequency (f1=5500MHz, f2=f1+100kHz) 0 -15 Pin (dBm) Pout, IM3 vs. Pin 40 -20 NF (dB) -30 -40 10 7 4000 4500 5000 5500 6000 6500 0 7000 freqency (MHz) -5- NJG1148MD7 I ELECTRICAL CHARACTERISTICS (LNA mode) Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit OIP3, IIP3 vs. frequency P-1dB(IN) vs. frequency (f=4900~5950MHz) 5 (f1=4900~5950MHz, f2=f1+100kHz, Pin=-25dBm) 30 P-1dB(IN) OIP3, IIP3 (dBm) P-1dB(IN) (dBm) 25 0 -5 OIP3 20 15 10 -10 IIP3 5 -15 4500 4750 5000 5250 5500 5750 0 4500 6000 5000 frequency (MHz) Gain vs. Interference Power 16 5500 6000 frequency (MHz) K factor vs. frequency (f=5500MHz, Pin=-30dBm, f Tx=1940MHz) 20 (f = 50MHz ~ 20GHz) 20 16 14 15 12 12 10 8 8 4 K factor Gain (dB) Gain 10 5 Psat(Tx-1dB)=-10.0dBm 6 -40 0 -35 -30 -25 -20 -15 -10 Interference Power (dBm) -6- -5 0 0 0 5 10 frequency (GHz) 15 20 NJG1148MD7 I ELECTRICAL CHARACTERISTICS (LNA mode) Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit S11, S22 (0.05~10GHz) VSWRi, VSWRo (0.05~10GHz) S11, S22 (0.05~20GHz) S21, S12 (0.05~10GHz) Zin, Zout (0.05~10GHz) S21, S12 (0.05~20GHz) -7- NJG1148MD7 I ELECTRICAL CHARACTERISTICS (LNA mode) Conditions: VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit IDD vs. VDD Gain, NF vs. VDD (RF off) 14 4 13 12 3.5 Gain (dB) 8 6 12 3 11 2.5 10 2 9 1.5 NF 8 4 1 7 0.5 Exclude PCB, Connector Losses 2 6 2 2.5 3 3.5 4 4.5 5 0 2 2.5 3 4 4.5 5 VDD (V) VDD (V) RL vs. VDD P-1dB(IN) vs. VDD (f=5500MHz) 20 3.5 (f=5500MHz) 10 RLi P-1dB(IN) (dBm) RLi, RLo (dB) 15 10 RLo 5 5 0 -5 0 -10 2 2.5 3 3.5 4 4.5 5 2 2.5 3 5 (f=5500MHz) 0 OIP3 Psat(Tx-1dB) (dBm) OIP3, IIP3 (dBm) 4.5 Psat(Tx-1dB) vs. VDD IIP3, OIP3 vs. VDD (f1=5500MHz, f2=f1+100kHz, Pin1=Pin2=-25dBm) 20 4 VDD (V) VDD (V) 25 3.5 15 10 -5 -10 -15 5 IIP3 0 -20 2 2.5 3 3.5 VDD (V) -8- 4 4.5 5 2 2.5 3 3.5 VDD (V) 4 4.5 5 NF (dB) Gain 10 IDD (mA) (f=5500MHz) 14 NJG1148MD7 I ELECTRICAL CHARACTERISTICS (LNA mode) Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit Gain, NF vs. Temperature IDD vs. Temperature (RF off) 10 (f=5500MHz) 15 4 14 3.5 8 Gain 6 4 3 12 2.5 11 2 10 1.5 NF (dB) Gain (dB) IDD (mA) 13 NF 9 1 8 0.5 2 0 -40 -20 0 20 40 60 80 7 -40 100 -20 0 20 60 80 0 100 Temperature (oC) Temperature ( oC) RL vs. Temperature P-1dB(IN) vs. Temperature (f=5500MHz) 20 40 (f=5500MHz) 5 RLin P-1dB(IN) (dBm) RL (dB) 15 10 5 0 -40 RLout -20 0 0 P-1dB(IN) -5 -10 20 40 60 80 -15 -40 100 -20 20 40 60 80 100 Psat(Tx-1dB) vs. Temperature OIP3, IIP3 vs. Temperature 25 0 Temperature ( oC) Temperature ( oC) (f1=5500MHz, f2=f1+100kHz, Pin=-25dBm) 0 (f1=5500MHz, Pin=-30dBm, f2=1940MHz) OIP3 P-1dB(IN) (dBm) OIP3, IIP3 (dBm) 20 15 10 5 IIP3 -5 Psat(Tx-1dB) -10 -15 0 -5 -40 -20 0 20 40 60 Temperature ( oC) 80 100 -20 -40 -20 0 20 40 60 80 100 Temperature (oC) -9- NJG1148MD7 I ELECTRICAL CHARACTERISTICS (LNA mode) Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit Kfactor vs. Temperature IDD vs. VCTL (f=50MHz~20GHz) 20 (RF off) 10 -40(oC) -20(oC) 15 8 0(oC) IDD (mA) K factor 25(oC) 60(oC) 85(oC) 10 6 -40(oC) 4 -20(oC) 0(oC) 25(oC) 5 2 60(oC) 85(oC) 0 0 0 5 10 Frequency(GHz) - 10 - 15 20 0 0.5 1 VCTL (V) 1.5 2 NJG1148MD7 I ELECTRICAL CHARACTERISTICS (Bypass mode) Conditions: VDD=3.3V, VCTL=0V, Ta=25oC, Zs=Zl=50 ohm, with application circuit Pout vs. Pin Loss, IDD vs. Pin (f=5500MHz) (f=5500MHz) 3 P-1dB(OUT)=8.1dBm Loss (dB) 10 Pout (dBm) 20.0 Loss 0 Pout -10 4 16.0 5 12.0 6 8.0 IDD 7 -20 4.0 P-1dB(IN)=+13.0dBm -30 -20 -15 -10 -5 0 5 P-1dB(IN)=+13.0dBm 10 8 -20 15 0.0 -15 -10 -5 0 5 10 15 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin Loss vs. frequency (f1=5500MHz, f2=f1+100kHz) 20 IDD (uA) 20 0 OIP3=+6.9dBm 0 2 -20 Loss (dB) Pout, IM3 (dBm) Pout -40 -60 4 Loss 6 IM3 8 -80 (Exclude PCB, connector losses) 10 4000 IIP3=+10.8dBm -100 -20 -15 -10 -5 0 5 10 15 4500 5000 5500 6000 6500 7000 frequency(MHz) Pin (dBm) P-1dB(IN) vs. frequency 25 OIP3, IIP3 vs. frequency (f=4900~5950MHz) 16 (f1=4900~5950MHz, f2=f1+100kHz, Pin=-10dBm) OIP3, IIP3 (dBm) P-1dB(IN) (dBm) 14 20 15 P-1dB(IN) 10 12 IIP3 10 8 6 OIP3 5 4500 5000 5500 frequency (MHz) 6000 4 4500 5000 5500 6000 frequency (MHz) - 11 - NJG1148MD7 I ELECTRICAL CHARACTERISTICS (Bypass mode) Conditions: VDD=3.3V, VCTL=0V, Ta=25oC, Zs=Zl=50 ohm, with application circuit S11, S22 (0.05~10GHz) VSWRi, VSWRo (0.05~10GHz) S11, S22 (0.05~20GHz) - 12 - S21, S12 (0.05~10GHz) Zin, Zout (0.05~10GHz) S21, S12 (0.05~20GHz) NJG1148MD7 I ELECTRICAL CHARACTERISTICS (Bypass mode) Conditions: VCTL=0V, Ta=25oC, Zs=Zl=50 ohm, with application circuit Loss vs. VDD IDD vs. VDD (RF off) 10 2 Loss (dB) IDD (uA) 8 6 4 4 6 8 2 10 0 2 2.5 3 3.5 4 4.5 2 5 2.5 3 3.5 4 VDD (V) VDD (V) RL vs. VDD P-1dB(IN) vs. VDD (f=5500MHz) 20 18 RLo 16 RLi 14 4.5 5 4.5 5 (f=5500MHz) 20 P-1dB(IN) (dBm) RLi, RLo (dB) (f=5500MHz) 0 15 10 5 12 10 0 2 2.5 3 3.5 4 4.5 5 2 2.5 3 3.5 4 VDD (V) VDD (V) OIP3, IIP3 vs. VDD (f=5500MHz) 14 IIP3 OIP3, IIP3 (dBm) 12 10 8 6 OIP3 4 2 2 2.5 3 3.5 4 4.5 5 VDD (V) - 13 - NJG1148MD7 I ELECTRICAL CHARACTERISTICS (Bypass mode) Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit IDD vs. Temperature Loss vs. Temperature (RF off) 10 (f=5500MHz) 0.0 1.0 8 Loss (dB) IDD (uA) 2.0 6 4 3.0 4.0 5.0 6.0 2 7.0 0 -40 -20 0 20 40 60 80 8.0 -40 100 -20 0 20 40 60 80 Temperature (oC) Temperature (oC) RL vs. Temperature P-1dB(IN) vs. Temperature (f=5500MHz) 20 100 (f=5500MHz) 20 RLo P-1dB(IN) (dBm) 15 RL (dB) RLi 10 5 0 -40 15 P-1dB(IN) 10 5 -20 0 20 40 60 80 0 -40 100 -20 0 40 60 20 -40(oC) -20(oC) 12 0(oC) 15 25(oC) 60(oC) 10 Kfactor OIP3, IIP3 (dBm) 100 (50MHz~20GHz) (f1=5500MHz, f2=f1+100kHz, Pin=-10dBm) IIP3 OIP3 8 6 4 -40 85(oC) 10 5 -20 0 20 40 60 Temperature ( oC) 80 100 0 0 5 10 Frequency(GHz) - 14 - 80 Kfactor vs. Temperature OIP3, IIP3 vs. Temperature 14 20 Temperature (oC) Temperature ( oC) 15 20 NJG1148MD7 I APPLICATION CIRCUIT (Top View) 1PIN INDEX NC(GND) 14 1 GND NC(GND) 13 12 11 Bypass circuit NC(GND) RF IN NC(GND) 2 10 LNA circuit RFIN RFOUT 3 9 Logic circuit GND VDD 4 NC(GND) RF OUT VDD C1 1000pF 8 5 6 GND 7 GND NC(GND) VCTL VCTL I TEST PCB LAYOUT PARTS LIST C1 Parts ID Manufacturer C1 MURATA GRM03 Series RF OUT RF IN 1PIN INDEX VCTL VDD PCB Substrate: FR4 Thickness: 0.2mm MICROSTRIP LINE WIDTH : 0.40mm (Z0=50 ohm) PCB SIZE: 17.0mm x 17.0mm PRECAUTIONS Bypass capacitor C1 is placed as close as possible to the IC. In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. All GND terminals must be connected to PCB ground place in order to reduce the inductance as soon as possible. - 15 - NJG1148MD7 I MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer : Agilent 8975A Noise Source : Agilent 346A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 16 Average mode : Point Bandwidth : 4MHz Loss comp : off Tcold : setting the temperature of noise source (300K) NF Analyzer (Agilent 8975A) Noise Source (Agilent 346A) Preamplifier (Gain=12.5dB, NF=1.5dB) Input (50) Noise Source Drive Output * Noise sauce, the preamplifier, and NF analyzer are connected directly. Calibration Setup NF Analyzer (Agilent 8975A) Preamplifier (Gain=12.5dB, NF=1.5dB) Noise Source (Agilent 346A) * Noise sauce, DUT, IN DUT OUT Input (50) Noise Source Drive Output the preamplifier, and NF analyzer are connected directly. Measurement Setup - 16 - NJG1148MD7 I PACKAGE OUTLINE (ESON14-D7) Unit Substrate Terminal Treat Molding Material Weight Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. :mm :Cu :SnBi :Epoxy Resin :0.0033 (g) [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 17 -