NJG1148MD7
- 1 -
Ver.2011-11-18
5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC
I
II
I GENERAL DESCRIPTION
I
II
I PACKAGE OUTLINE
NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC
designed for wireless LAN, wireless image transmission and
Intelligent Transport System.
The NJG1148MD7 has a LNA pass-through function to select
high gain mode or low gain mode by low control voltage operation.
Within the wide dynamic range from 4.9~5.95GHz, the
NJG1148MD7 achieves low noise figure and high linearity with
fewer external components.
The ESD protection circuits are integrated into the MMIC. They
achieve high ESD protection voltage.
A small and ultra-thin package of EQFN14-D7 is adopted.
I
II
I FEATURES
G Operating voltage 3.3V
G Low current consumption 7.0mA typ. @V
DD
=3.3V, V
CTL
=1.8V (LNA mode)
5uA typ. @V
DD
=3.3V, V
CTL
=0V (Bypass mode)
G High Gain 12.5dB typ. @V
DD
=3.3V, V
CTL
=1.8V (LNA mode)
G Low Noise figure 1.5dB typ. @V
DD
=3.3V, V
CTL
=1.8V (LNA mode)
G High IIP3 +5.0dBm typ. @V
DD
=3.3V, V
CTL
=1.8V (LNA mode)
G Low Insertion Loss 5.0dB typ. @V
DD
=3.3V, V
CTL
=0V (Bypass mode)
G Few external components 1pcs. (Bypass Capacitor)
G Small package size EQFN14-D7 (Package size: 1.6mm x 1.6mm x 0.397mm typ.)
G Pb free, Halogen free
I
II
I PIN CONFIGURATION
I
II
I TRUTH TABLE “H”=V
CTL(H)
“L”=V
CTL(L)
Note: Specifications and description listed in this datasheet are subject to change without notice
Pin Connection
1. NC(GND)
2. RFIN
3. GND
4. NC(GND)
5. GND
6. GND
7. VCTL
8. NC(GND)
9. VDD
10. RFOUT
11. NC(GND)
12. GND
13. NC(GND)
14. NC(GND)
(Top View)
1
13
11
6
8
LNA circuit
Bypass
circuit
Logic
circuit
4
1PIN INDEX
RFIN
NC(GND)
RFOUT
VDD
NC(GND)
VCTL
9
10
14 12
2
3
5 7
GNDNC(GND)
GND GND
GND
NC(GND) NC(GND)
NC(GND)
NJG1148MD7
V
CTL
LNA Circuit Bypass Circuit Operating mode
H ON OFF LNA mode
L OFF ON Bypass mode
7
- 2 -
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I ABSOLUTE MAXIMUM RATINGS
T
a
=+25°C, Z
s
=Z
l
=50 ohm
PARAMETER SYMBOL
CONDITIONS RATINGS UNITS
Drain voltage V
DD
5.0 V
Control voltage V
CTL
5.0 V
Input power P
in
V
DD
=3.3V +15 dBm
Power dissipation P
D
4-layer FR4 PCB with through-hole
(74.2x74.2mm), T
j
=150°C 1300 mW
Operating temperature
T
opr
-40~+85 °C
Storage temperature T
stg
-55~+150 °C
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I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)
V
DD
=3.3V, T
a
=+25°C, Z
s
=Z
l
=50 ohm
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX UNITS
Operating voltage V
DD
2.7 3.3 4.5 V
Control voltage (High) V
CTL(H)
1.6 1.8 4.5 V
Control voltage (Low) V
CTL(L)
0 0 0.4 V
Operating current1 I
DD
1 RF OFF, V
CTL
=1.8V - 7.0 11.0 mA
Operating current2 I
DD
2 RF OFF, V
CTL
=0V - 5 9 uA
Control current I
CTL
RF OFF, V
CTL
=1.8V - 6 10 uA
NJG1148MD7
- 3 -
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I ELECTRICAL CHARACTERISTICS2 (LNA mode)
V
DD
=3.3V, V
CTL
=1.8V, freq=4900~5950MHz, T
a
=+25°C, Z
s
=Z
l
=50 ohm, with application circuit
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX UNITS
Small signal gain Gain Exclude PCB
& connector losses *1 9.5 12.5 16.0 dB
Noise figure NF Exclude PCB
& connector losses *2 - 1.5 2.2 dB
Input power
at 1dB gain
compression point1
P-1dB
(IN)1 -12.0 -5.0 - dBm
Input 3rd order
intercept point1 IIP3_1 f1=freq, f2=freq+100kHz,
P
IN
=-25dBm 0.0 +5.0 - dBm
Input Tx Power at
1dB Gain
Compression Point
Psat
(Tx-1dB)
Fundamental frequency:
f1=5500MHz, Pin=-30dBm
Tx frequency:
f2=1710MHz, 1940MHz,
2170MHz
Input Tx Power at 1dB
fundamental Gain
compression point
-17.0 -8.0 - dBm
Isolation ISL - 35.0 - dB
RF IN Return loss1 RLi1 8.0 12.0 - dB
RF OUT Return loss1
RLo1 5.0 12.0 - dB
*1 Input & output PCB and connector losses: 0.58dB (5500MHz)
*2 Input PCB and connector losses: 0.29dB (5500MHz)
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I ELECTRICAL CHARACTERISTICS3 (Bypass mode)
V
DD
=3.3V, V
CTL
=0V, freq=4900~5950MHz, T
a
=+25°C, Z
s
=Z
l
=50 ohm, with application circuit
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX UNITS
Insertion Loss Loss Exclude PCB
& connector losses *1 - 5.0 7.0 dB
Input power at
1dB gain
compression point2
P-1dB
(IN)2 -1.0 +10.0
- dBm
Input 3rd order
intercept point2 IIP3_2 f1=freq, f2=freq+100kHz,
P
IN
=-10dBm +3.0 +10.0
- dBm
RF IN Return loss2 RLi2 7.0 12.0 - dB
RF OUT Return loss2
RLo2 8.0 12.0 - dB
*1 Input & output PCB and connector losses: 0.58dB (5500MHz)
7
- 4 -
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I TERMINAL INFORMATION
No. SYMBOL
DESCRIPTION
1, 4, 8, 11,
13, 14 NC(GND)
No connected terminal. This terminal is not connected with internal
circuit. Please connect this terminal with ground place as close as
possible for excellent RF performance.
2 RFIN
RF input terminal. This IC integrates an input DC blocking
capacitor.
3, 5, 6, 12
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
7 VCTL
Control voltage terminal.
9 VDD Supply voltage terminal for LNA and logic circuit. Bypass to ground
with capacitor C1 as close as possible to the IC.
10 RFOUT
RF output terminal. This IC integrates an input DC blocking
capacitor.
NJG1148MD7
- 5 -
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I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: V
DD
=3.3V, V
CTL
=1.8V, Ta=25
o
C, Zs=Zl=50 ohm, with application circuit
7
8
9
10
11
12
13
14
15
0
0.5
1
1.5
2
2.5
3
3.5
4
4000 4500 5000 5500 6000 6500 7000
Gain, NF vs. frequency
Gain (dB)
NF (dB)
freqency (MHz)
Gain
NF
(Exclude PCB, connector losses)
-30
-25
-20
-15
-10
-5
0
5
10
15
-40 -35 -30 -25 -20 -15 -10 -5 0
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-2.5dBm
Pout
Pout vs. Pin
(f=5500MHz)
P-1dB(OUT)=8.6dBm
-5
0
5
10
15
0
5
10
15
20
-40 -35 -30 -25 -20 -15 -10 -5 0
Gain (dB)
IDD (mA)
Pin (dBm)
IDD
Gain
P-1dB(IN)=-2.5dBm
Gain, IDD vs. Pin
(f=5500MHz)
-100
-80
-60
-40
-20
0
20
40
-30 -25 -20 -15 -10 -5 0 5 10
Pout, IM3 (dBm)
Pin (dBm)
IIP3=+6.9dBm
Pout, IM3 vs. Pin
(f1=5500MHz, f2=f1+100kHz)
Pout
IM3
OIP3=+18.7dBm
7
- 6 -
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I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: V
DD
=3.3V, V
CTL
=1.8V, Ta=25
o
C, Zs=Zl=50 ohm, with application circuit
-15
-10
-5
0
5
4500 4750 5000 5250 5500 5750 6000
P-1dB(IN) (dBm)
frequency (MHz)
P-1dB(IN)
P-1dB(IN) vs. frequency
(f=4900~5950MHz)
0
5
10
15
20
0 5 10 15 20
K factor
frequency (GHz)
K factor vs. frequency
(f = 50MHz ~ 20GHz)
6
8
10
12
14
16
-40 -35 -30 -25 -20 -15 -10 -5 0
0
00
0
4
44
4
8
88
8
12
1212
12
16
1616
16
20
2020
20
Gain (dB)
Interference Power (dBm)
Gain
Psat(Tx-1dB)=-10.0dBm
Gain vs. Interference Power
(f=5500MHz, Pin=-30dBm, f
Tx
=1940MHz)
0
5
10
15
20
25
30
4500 5000 5500 6000
OIP3, IIP3 (dBm)
frequency (MHz)
OIP3
IIP3
OIP3, IIP3 vs. frequency
(f1=4900~5950MHz, f2=f1+100kHz, Pin=-25dBm)
NJG1148MD7
- 7 -
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I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: V
DD
=3.3V, V
CTL
=1.8V, Ta=25
o
C, Zs=Zl=50 ohm, with application circuit
S11, S22 (0.05~10GHz)
S21, S12 (0.05~10GHz)
VSWRi, VSWRo (0.05~10GHz) Zin, Zout (0.05~10GHz)
S21, S12 (0.05~20GHz)
S11, S22 (0.05~20GHz)
7
- 8 -
I
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I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: V
CTL
=1.8V, Ta=25
o
C, Zs=Zl=50 ohm, with application circuit
6
7
8
9
10
11
12
13
14
0
0.5
1
1.5
2
2.5
3
3.5
4
2 2.5 3 3.5 4 4.5 5
Gain (dB)
NF (dB)
V
DD
(V)
Gain, NF vs. V
DD
(f=5500MHz)
Gain
NF
Exclude PCB, Connector Losses
0
5
10
15
20
2 2.5 3 3.5 4 4.5 5
RLi, RLo (dB)
V
DD
(V)
RL vs. V
DD
(f=5500MHz)
RLo
RLi
2
4
6
8
10
12
14
2 2.5 3 3.5 4 4.5 5
I
DD
vs. V
DD
(RF off)
I
DD
(mA)
V
DD
(V)
-20
-15
-10
-5
0
2 2.5 3 3.5 4 4.5 5
Psat(Tx-1dB) (dBm)
V
DD
(V)
Psat(Tx-1dB) vs. V
DD
(f=5500MHz)
-10
-5
0
5
10
2 2.5 3 3.5 4 4.5 5
P-1dB(IN) (dBm)
V
DD
(V)
P-1dB(IN) vs. V
DD
(f=5500MHz)
0
5
10
15
20
25
2 2.5 3 3.5 4 4.5 5
OIP3, IIP3 (dBm)
V
DD
(V)
IIP3, OIP3 vs. V
DD
(f1=5500MHz, f2=f1+100kHz, Pin1=Pin2=-25dBm)
IIP3
OIP3
NJG1148MD7
- 9 -
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I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: V
DD
=3.3V, V
CTL
=1.8V, Zs=Zl=50 ohm, with application circuit
7
8
9
10
11
12
13
14
15
0
0.5
1
1.5
2
2.5
3
3.5
4
-40 -20 0 20 40 60 80 100
Gain (dB)
NF (dB)
Temperature (
o
C)
Gain
NF
Gain, NF vs. Temperature
(f=5500MHz)
0
2
4
6
8
10
-40 -20 0 20 40 60 80 100
I
DD
(mA)
Temperature (
o
C)
I
DD
vs. Temperature
(RF off)
-20
-15
-10
-5
0
-40 -20 0 20 40 60 80 100
P-1dB(IN) (dBm)
Temperature (
o
C)
Psat(Tx-1dB)
Psat(Tx-1dB) vs. Temperature
(f1=5500MHz, Pin=-30dBm, f2=1940MHz)
0
5
10
15
20
-40 -20 0 20 40 60 80 100
RL (dB)
Temperature (
o
C)
RL vs. Temperature
(f=5500MHz)
RLin
RLout
-15
-10
-5
0
5
-40 -20 0 20 40 60 80 100
P-1dB(IN) (dBm)
Temperature (
o
C)
P-1dB(IN)
P-1dB(IN) vs. Temperature
(f=5500MHz)
-5
0
5
10
15
20
25
-40 -20 0 20 40 60 80 100
OIP3, IIP3 (dBm)
Temperature (
o
C)
OIP3
IIP3
OIP3, IIP3 vs. Temperature
(f1=5500MHz, f2=f1+100kHz, Pin=-25dBm)
7
- 10 -
I
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I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: V
DD
=3.3V, V
CTL
=1.8V, Zs=Zl=50 ohm, with application circuit
0
2
4
6
8
10
0 0.5 1 1.5 2
I
DD
vs. V
CTL
(RF off)
-40(
o
C)
-20(
o
C)
0(
o
C)
25(
o
C)
60(
o
C)
85(
o
C)
I
DD
(mA)
V
CTL
(V)
0
5
10
15
20
0 5 10 15 20
Kfactor vs. Temperature
(f=50MHz~20GHz)
-40(
o
C)
-20(
o
C)
0(
o
C)
25(
o
C)
60(
o
C)
85(
o
C)
K factor
Frequency(GHz)
NJG1148MD7
- 11 -
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I ELECTRICAL CHARACTERISTICS (Bypass mode)
Conditions: V
DD
=3.3V, V
CTL
=0V, Ta=25
o
C, Zs=Zl=50 ohm, with application circuit
0
2
4
6
8
10
4000 4500 5000 5500 6000 6500 7000
Loss vs. frequency
Loss (dB)
frequency(MHz)
Loss
(Exclude PCB, connector losses)
5
10
15
20
25
4500 5000 5500 6000
P-1dB(IN) (dBm)
frequency (MHz)
P-1dB(IN)
P-1dB(IN) vs. frequency
(f=4900~5950MHz)
-30
-20
-10
0
10
20
-20 -15 -10 -5 0 5 10 15
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+13.0dBm
Pout
Pout vs. Pin
(f=5500MHz)
P-1dB(OUT)=8.1dBm
3
4
5
6
7
8
-20 -15 -10 -5 0 5 10 15
0.0
4.0
8.0
12.0
16.0
20.0
IDD (uA)
Pin (dBm)
Loss (dB)
Loss
IDD
P-1dB(IN)=+13.0dBm
Loss, IDD vs. Pin
(f=5500MHz)
-100
-80
-60
-40
-20
0
20
-20 -15 -10 -5 0 5 10 15
Pout, IM3 (dBm)
Pin (dBm)
Pout, IM3 vs. Pin
(f1=5500MHz, f2=f1+100kHz)
IIP3=+10.8dBm
OIP3=+6.9dBm
Pout
IM3
4
6
8
10
12
14
16
4500 5000 5500 6000
OIP3, IIP3 (dBm)
frequency (MHz)
OIP3
IIP3
OIP3, IIP3 vs. frequency
(f1=4900~5950MHz, f2=f1+100kHz, Pin=-10dBm)
7
- 12 -
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I ELECTRICAL CHARACTERISTICS (Bypass mode)
Conditions: V
DD
=3.3V, V
CTL
=0V, Ta=25
o
C, Zs=Zl=50 ohm, with application circuit
S11, S22 (0.05~10GHz)
S21, S12 (0.05~10GHz)
VSWRi, VSWRo (0.05~10GHz) Zin, Zout (0.05~10GHz)
S11, S22 (0.05~20GHz) S21, S12 (0.05~20GHz)
NJG1148MD7
- 13 -
I
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I ELECTRICAL CHARACTERISTICS (Bypass mode)
Conditions: V
CTL
=0V, Ta=25
o
C, Zs=Zl=50 ohm, with application circuit
0
2
4
6
8
10
2 2.5 3 3.5 4 4.5 5
Loss (dB)
V
DD
(V)
Loss vs. V
DD
(f=5500MHz)
0
5
10
15
20
2 2.5 3 3.5 4 4.5 5
P-1dB(IN) (dBm)
V
DD
(V)
P-1dB(IN) vs. V
DD
(f=5500MHz)
10
12
14
16
18
20
2 2.5 3 3.5 4 4.5 5
RLi, RLo (dB)
V
DD
(V)
RL vs. V
DD
(f=5500MHz)
RLi
RLo
0
2
4
6
8
10
2 2.5 3 3.5 4 4.5 5
I
DD
vs. V
DD
(RF off)
IDD
(uA)
VDD
(V)
2
4
6
8
10
12
14
2 2.5 3 3.5 4 4.5 5
OIP3, IIP3 (dBm)
VDD (V)
OIP3, IIP3 vs. V
DD
(f=5500MHz)
IIP3
OIP3
7
- 14 -
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I ELECTRICAL CHARACTERISTICS (Bypass mode)
Conditions: V
DD
=3.3V, V
CTL
=1.8V, Zs=Zl=50 ohm, with application circuit
0
5
10
15
20
-40 -20 0 20 40 60 80 100
P-1dB(IN) (dBm)
Temperature (
o
C)
P-1dB(IN)
P-1dB(IN) vs. Temperature
(f=5500MHz)
0
5
10
15
20
-40 -20 0 20 40 60 80 100
RL (dB)
Temperature (
o
C)
RL vs. Temperature
(f=5500MHz)
RLi
RLo
4
6
8
10
12
14
-40 -20 0 20 40 60 80 100
OIP3, IIP3 (dBm)
Temperature (
o
C)
OIP3
IIP3
OIP3, IIP3 vs. Temperature
(f1=5500MHz, f2=f1+100kHz, Pin=-10dBm)
0
2
4
6
8
10
-40 -20 0 20 40 60 80 100
I
DD
(uA)
Temperature (
o
C)
I
DD
vs. Temperature
(RF off)
0
5
10
15
20
0 5 10 15 20
Kfactor vs. Temperature
(50MHz~20GHz)
-40(
o
C)
-20(
o
C)
0(
o
C)
25(
o
C)
60(
o
C)
85(
o
C)
Kfactor
Frequency(GHz)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-40 -20 0 20 40 60 80 100
Loss (dB)
Temperature (
o
C)
Loss vs. Temperature
(f=5500MHz)
NJG1148MD7
- 15 -
I
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I APPLICATION CIRCUIT
I
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I TEST PCB LAYOUT
PRECAUTIONS
・Bypass capacitor C1 is placed as close as possible to the IC.
・In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.
・All GND terminals must be connected to PCB ground place in order to reduce the inductance
as soon as possible.
V
DD
V
CTL
C1
RF IN
RF OUT
1PIN INDEX
(Top View)
1
13
11
6
8
LNA circuit
Bypass
circuit
Logic
circuit
4
1PIN INDEX
RFIN
NC(GND)
RFOUT
VDD
9
10
14 12
2
3
5 7
GND
NC(GND)
NC(GND)
NC(GND)
NC(GND)NC(GND) GND
RF OUT
VDD
C1 1000pF
VCTL
VCTL
GND GND
RF IN
PCB
Substrate
: FR4
Thickness
: 0.2mm
MICROSTRIP LINE WIDTH
: 0.40mm (Z
0
=50 ohm)
PCB SIZE
: 17.0mm x 17.0mm
PARTS LIST
Parts ID Manufacturer
C1 MURATA
GRM03 Series
7
- 16 -
I
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I MEASUREMENT BLOCK DIAGRAM
Measuring instruments
NF Analyzer
: Agilent 8975A
Noise Source
: Agilent 346A
Setting the NF analyzer
Measurement mode form
Device under test : Amplifier
System downconverter : off
Mode setup form
Sideband : LSB
Averages : 16
Average mode : Point
Bandwidth : 4MHz
Loss comp : off
Tcold :
setting the temperature of noise source
(300K)
* Noise sauce, DUT,
the preamplifier,
and NF analyzer are
connected directly.
Calibration Setup
Noise Source
(Agilent 346A)
NF Analyzer
(Agilent 8975A)
Input (50Ω)
Noise Source
Drive Output
Preamplifier
(Gain=12.5dB,
NF=1.5dB)
Measurement Setup
Noise Source
(Agilent 346A)
DUT
NF Analyzer
(Agilent 8975A)
Input (50Ω)
Noise Source
Drive Output
IN
OUT
Preamplifier
(Gain=12.5dB,
NF=1.5dB)
* Noise sauce,
the preamplifier,
and NF analyzer are
connected directly.
NJG1148MD7
- 17 -
I
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I PACKAGE OUTLINE (ESON14-D7)
Unit :mm
Substrate :Cu
Terminal Treat :SnBi
Molding Material :Epoxy Resin
Weight :0.0033 (g)
Caution
s
on using
this
product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
•
To
wast
e
th
is
product, please obey the relati
ng
law
of
your
country.
This product may be damaged with electric static discharge (ESD) or spike voltage. P
lease
hand
le with care to avoid these damages
.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative
usages of the product and not intended for
the guarantee or permission of any right
including the industrial rights.