BD439 BD441 NPN power transistors Features . NPN transistors Applications Linear and switching industrial equipment Description The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD440 and BD442. Table 1. 3 2 1 SOT-32 Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BD439 BD441 BD439 BD441 SOT-32 SOT-32 Tube Tube July 2007 Rev 4 1/9 www.st.com 9 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter Unit BD439 BD441 VCBO Collector-base voltage (IE = 0) 60 80 V VCES Collector-emitter voltage (VBE = 0) 60 80 V VCEO Collector-emitter voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 4 A Collector peak current (tp < ms) 7 A Base current 1 A PTOT Total dissipation at Tcase = 25C 36 W Tstg Storage temperature -65 to 150 C 150 C IC ICM IB TJ 2/9 BD439 BD441 Max. operating junction temperature BD439 BD441 2 Electrical characteristics Electrical characteristics (Tcase = 25C; unless otherwise specified) Table 3. Electrical characteristics Symbol ICBO ICES IEBO Parameter VBE(1) Typ. Max. Unit for BD439 VCB =60V 0.1 mA (IE = 0) for BD441 VCB =80V 0.1 mA Collector cut-off current for BD439 VCE =60V 0.1 mA (V BE = 0) for BD441 VCE =80V 0.1 mA Emitter cut-off current (IC = 0) VEB =5V 1 mA Collector-emitter saturation voltage Base-emitter voltage IC =100mA for BD439 for BD441 60 80 IC =2A __ IB = 0.2A IC =10mA_ VCE =5V IC =2A_ V CE =1V IC = 10mA__ VCE =5V for BD439 for BD441 IC =500mA_ V CE =1V hFE(1) Min. Collector cut-off current Collector-emitter VCEO(sus)(1) sustaining voltage (IB = 0) VCE(sat)(1) Test Conditions DC current gain IC =2A_ V V 0.8 V 1.5 V V 0.58 20 130 15 130 for BD439 for BD441 VCE =1V 40 140 40 140 for BD439 for BD441 25 15 1. Pulsed duration = 300 ms, duty cycle 1.5%. 3/9 Electrical characteristics 2.1 4/9 BD439 BD441 Electrical characteristic (curves) Figure 2. DC current gain Figure 3. DC current gain Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage Figure 6. Base-emitter on voltage Figure 7. Resistive load switching time BD439 BD441 Figure 8. 2.2 Electrical characteristics Resistive load switching time Test circuits Figure 9. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 5/9 Package mechanical data 3 BD439 BD441 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 BD439 BD441 Package mechanical data SOT-32 (TO-126) MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 2.4 2.9 B 0.64 0.88 B1 0.39 0.63 D 10.5 11.05 E 7.4 7.8 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.3 16 P 2.9 3.2 Q Q1 3.8 1 1.52 H2 2.15 I 1.27 0016114E 7/9 Revision history BD439 BD441 4 Revision history Table 4. 8/9 Revision history Date Revision Changes 01-Dec-2000 1 Initial Release 11-Feb-2003 2 Minor text changes 03-Apr-2007 3 The document has been reformatted. 16-Jul-2007 4 Figure 2, 3, 4, 5, 6, 7, 8 and figure 9 added. BD439 BD441 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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