Bulletin I25196 rev. B 01/00 ST1200C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 1650A Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk Typical Applications DC motor controls Controlled DC power supplies AC controllers case style A-24 (K-PUK) Major Ratings and Characteristics Parameters ST1200C..K Units 1650 A 55 C 3080 A 25 C @ 50Hz 30500 A @ 60Hz 32000 A @ 50Hz 4651 KA2s @ 60Hz 4250 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 It VDRM /VRRM tq typical TJ www.irf.com 1200 to 2000 V 200 s - 40 to 125 C 1 ST1200C..K Series Bulletin I25196 rev.B 01/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 Type number ST1200C..K 100 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature ST1200C..K 1650 (700) A 180 conduction, half sine wave 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current 3080 I TSM Max. peak, one-cycle 30500 non-repetitive surge current 32000 I 2t 2 Maximum I t for fusing Units Conditions DC @ 25C heatsink temperature double side cooled t = 10ms reapplied 25700 t = 10ms 100% VRRM 26900 t = 8.3ms reapplied Sinusoidal half wave, 4651 t = 10ms No voltage Initial TJ = TJ max. 4250 t = 8.3ms reapplied KA2s 3000 I 2 t Maximum I2t for fusing V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 Low level value of on-state 46510 High level value of on-state slope resistance t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V (I > x IT(AV)),TJ = TJ max. 1.01 (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. 0.21 m (I > x IT(AV) ),TJ = TJ max. 0.19 V TM Max. on-state voltage 1.73 IH Maximum holding current 600 IL Typical latching current 1000 2 KA 2s 0.91 slope resistance r t2 No voltage t = 8.3ms 3300 A V mA I = 4000A, TJ = TJ max, t = 10ms sine pulse pk p T J = 25C, anode supply 12V resistive load www.irf.com ST1200C..K Series Bulletin I25196 rev.B 01/00 Switching Parameter di/dt ST1200C..K Max. non-repetitive rate of rise 1000 of turned-on current td Typical delay time Units Conditions A/s Gate current 1A, di g/dt = 1A/s 1.9 s t q Typical turn-off time Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM 200 Vd = 0.67% VDRM, T J = 25C ITM = 550A, TJ = TJ max, di/dt = 40A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s p Blocking Parameter ST1200C..K Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/s T J = TJ max. linear to 80% rated V DRM IRRM IDRM Max. peak reverse and off-state leakage current 100 mA TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM ST1200C..K Maximum peak gate power Max. peak positive gate current +VGM Maximum peak positive 3.0 Maximum peak negative VGT V TJ = TJ max, tp 5ms mA T J = 25C DC gate voltage required DC gate current not to trigger DC gate voltage not to trigger www.irf.com p MAX. 200 - 100 200 50 - 1.4 - 1.1 3.0 0.9 VGD T J = TJ max, t 5ms T J = - 40C DC gate current required to trigger IGD A 5.0 TYP. to trigger p T J = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 3 gate voltage -VGM T J = TJ max, t 5ms 16 PG(AV) Maximum average gate power IGM Units Conditions T J = 125C T J = - 40C V 0.25 T J = 25C T J = 125C 10 Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 ST1200C..K Series Bulletin I25196 rev.B 01/00 Thermal and Mechanical Specification Parameter ST1200C..K TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.006 case to heatsink 0.003 Mounting force, 10% wt DC operation single side cooled K/W 0.021 RthC-hs Max. thermal resistance, Conditions C 0.042 junction to heatsink F Units K/W 24500 N (2500) (Kg) Approximate weight 425 g Case style A-24 (K-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side Conduction angle Units 180 0.003 0.003 0.002 0.002 120 0.004 0.004 0.004 0.004 90 0.005 0.005 0.005 0.005 60 0.007 0.007 0.007 0.007 30 0.012 0.012 0.012 0.012 Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 120 1 2 0 C 20 K 1 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - K = Puk Case A-24 (K-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/sec (Standard selection) L 4 = 1000V/sec (Special selection) www.irf.com ST1200C..K Series Bulletin I25196 rev.B 01/00 Outline Table 1 (0.04) MIN. TWO PLACES 47.5 (1.87) DIA. MAX. 2 7. 5 ( 1. 0 8 ) M A X . TWO PLACES PIN RECEPTACLE AMP. 60598-1 67 (2.6) DIA. MAX. 20 5 7 4 . 5 (2 . 9 ) D I A . M A X . 4.75 (0.2) NOM. 44 (1.73) Case Style A-24 (K-PUK) All dimensions in millimeters (inches) 2 HOLES DIA. 3.5 (0.14) x 2.1 (0.1) DEEP Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 130 ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 80 30 60 70 90 60 120 180 50 40 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) CREPAGE DESTANCE 28.88 (1.137) MIN. STRIKE DISTANCE 17.99 (0.708) MIN. 130 120 110 100 90 80 70 60 50 40 30 20 ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W Conduction Period 30 60 90 120 180 0 400 800 1200 DC 1600 2000 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 ST1200C..K Series ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Angle 80 70 30 60 90 50 120 40 180 30 0 4000 400 800 1200 1600 2000 3000 2500 1000 Conduction Angle 500 ST1200C..K Series T J = 125C 0 400 800 1200 1600 2000 60 90 120 180 0 DC 600 1200 1800 2400 3000 3600 5000 DC 180 120 90 60 30 4000 3000 RMS Limit 2000 Conduction Period 1000 ST1200C..K Series T J = 125C 0 0 600 1200 1800 2400 3000 3600 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 28000 At Any Rated Load Condition And With Rated V R R M Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 26000 24000 22000 20000 18000 16000 14000 ST1200C..K Series 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 30 Average On-state Current (A) 1500 12000 Conduction Period Fig. 4 - Current Ratings Characteristics 2000 0 60 50 40 30 20 ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W Average On-state Current (A) 180 120 90 60 30 RMS Limit 3500 130 120 110 100 90 80 70 Fig. 3 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (C) 60 Maximum Allowable Heatsink Temperature (C) 130 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Bulletin I25196 rev. B 01/00 32000 30000 28000 26000 24000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied R a t e d V R R MR e a p p l i e d 22000 20000 18000 16000 14000 12000 0.01 ST1200C..K Series 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST1200C..K Series Bulletin I25196 rev. B 01/00 Instantaneous On-state Current (A) 10000 1000 TJ = 25C T J = 125C ST1200C..K Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs(K/W) Fig. 9 - On-state Voltage Drop Characteristics 0.1 0.01 Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) (DC Operation) ST1200C..K Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (a ) (b) Tj=-40 C VGD Tj= 25 C 1 Tj= 125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) IG D D e v i c e : S T 1 2 0 0 C . . K S e r i e s 0.1 0.001 0.01 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7