TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/510
T4-LDS-0197 Rev. 1 (110296) Page 1 of 5
DEVICES LEVELS
2N6249 2N6250 2N6251 JAN
2N6249T1 2N6250T1 2N6251T1 JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N6249
2N6249T1 2N6250
2N6250T1 2N6251
2N6251T1 Unit
Collector-Emitter Voltage VCEO 200 275 350 Vdc
Collector-Base Voltage VCBO 300 375 450 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 10 Adc
Base Current IB 5.0
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2)
PT
6.0
175
W
Operating & Storage Junction Temperature Top, Tstg -65 to +200 °C
Thermal Resistance, Junction-to-Case RθJC 1.0 °C/W
NOTES:
(1) Derate linearly at 34.2 mW/°C for TA > +25°C
(2) Derate linearly at 1.0 mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 20mAdc; L = 42mH; f = 30 – 60Hz
(See Figure 10 of MIL-PRF-19500/510)
2N6249, T1
2N6250, T1
2N6251, T1
V(BR)CEO
200
275
350
Vdc
Collector-Emitter Breakdown Voltage
IC = 200mAdc; L = 14mH; f = 30 – 60Hz;
RBE = 50Ω
(See Figure 10 of MIL-PRF-19500/510)
2N6249, T1
2N6250, T1
2N6251, T1
V(BR)CER
225
300
375
Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc IEBO 100 µAdc
TO-3 (TO-204AA)
TO-254