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October 2013
FCD4N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
www.fairchildsemi.com
1
FCD4N60
N-Channel SuperFET® MOSFET
600 V, 3.9 A, 1.2
Features
650 V @TJ = 150 °C
•Typ. R
DS(on) = 1.0
Ultra Low Gate Charge (Typ. Qg = 12.8 nC)
Low Effective Output Capacitance (Typ. Coss.eff = 32 pF)
100% Avalanche Tested
•RoHS Compliant
Applications
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
Lighting AC-DC Power Supply
Solar Inverter
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Thermal Characteristics
Symbol Parameter FCD4N60TM Unit
VDSS Drain to Source Voltage 600 V
IDDrain Current - Continuous (TC = 25oC) 3.9 A
- Continuous (TC = 100oC) 2.5
IDM Drain Current - Pulsed (Note 1) 11.7 A
VGSS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 128 mJ
IAR Avalanche Current (Note 1) 3.9 A
EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25oC) 50 W
- Derate above 25oC0.4W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FCD4N60TM Unit
RJC Thermal Resistance, Junction to Case, Max. 2.5 oC/W
RJA Thermal Resistance, Junction to Ambient, Max. 83 oC/W
D-PAK
G
S
D
G
S
D
FCD4N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FCD4N60 FCD4N60TM D-PAK 380mm 16m 2500
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TC = 25oC 600 - - V
VGS = 0 V, ID = 250 μA, TC = 150oC- 650 - V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 1 mA, Referenced to 25oC-0.6-V/
oC
BVDS Drain-Source Avalanche Breakdown
Voltage VGS = 0 V, ID = 3.9 A - 700 - V
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 A
VDS = 480 V, TC = 125oC--10
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 A3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.0 A - 1.0 1.2
gFS Forward Transconductance VDS = 40 V, ID = 2.0 A -3.2-S
Ciss Input Capacitance VDS = 25 V, VGS = 0 V
f = 1.0 MHz
- 415 540 pF
Coss Output Capacitance - 210 275 pF
Crss Reverse Transfer Capacitance - 19.5 - pF
Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz - 12 16 pF
Cosseff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 32 - pF
td(on) Turn-On Delay Time
VDD = 300 V, ID = 3.9 A
RG = 25
(Note 4)
-1645ns
trTurn-On Rise Time - 45 100 ns
td(off) Turn-Off Delay Time - 36 85 ns
tfTurn-Off Fall Time - 30 70 ns
Qg(tot) Total Gate Charge at 10V VDS = 480 V, ID = 3.9 A,
VGS = 10 V
(Note 4)
- 12.8 16.6 nC
Qgs Gate to Source Gate Charge - 2.4 - nC
Qgd Gate to Drain “Miller” Charge - 7.1 - nC
ISMaximum Continuous Drain to Source Diode Forward Current - - 3.9 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 11.7 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 11 A - - 1.4 V
trr Reverse Recovery Time VGS = 0 V, ISD = 11 A
dIF/dt = 100 A/s
- 277 - ns
Qrr Reverse Recovery Charge - 2.07 - C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 1.9 A, VDD = 50 V, RG = 25 , Starting TJ = 25C
3. ISD 3.9 A, di/dt 200 A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCD4N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
246810
10-1
100
101
* Note
1. VDS = 40V
2. 250s Pulse Test
-55oC
150oC
25oC
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
0.1 1 10
0.1
1
10
VGS
Top : 15.0 V
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250s Pulse Test
2. TC = 25oC
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2
10-1
100
101
25oC
150oC
* Notes :
1. VGS = 0V
2. 250s Pulse Test
IDR , Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
0.0 2.5 5.0 7.5 10.0 12.5
0
1
2
3
4
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RDS(ON) [],Drain-Source On-Resistance
ID, Drain Current [A]
100101
0
200
400
600
800
1000
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 5 10 15
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
* Note : ID = 3.9A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
FCD4N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes :
1. VGS = 0 V
2. ID = 250A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [C
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes :
1. VGS = 10 V
2. ID = 2.0 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC
100101102103
10-1
100
10110 us
Operation in This Area
is Limited by R DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* Notes :
1. ZJC(t) = 2.5 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZJC(t), Thermal Response
t1, Square W ave Pulse Duration [sec]
t1
PDM
t2
ZJC(t), Thermal Response [oC/W]
FCD4N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
www.fairchildsemi.com
5
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
FCD4N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
www.fairchildsemi.com
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FCD4N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
www.fairchildsemi.com
7
Mechanical Dimensions
Dimension in Millimeters
TO-252 3L (DPAK)
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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FCD4N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
www.fairchildsemi.com
8
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Definition of Terms
AccuPower
AX-CAP®*
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®*
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®
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Rev. I66
tm
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