Single N-channel Trench MOSFET 100V, 120A, 4.5m General Description Features The MDP1921 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1921 is suitable device for DC/DC Converter and general purpose applications. VDS = 100V ID = 120A @VGS = 10V RDS(ON) < 4.5 m @VGS = 10V 100% UIL Tested 100% Rg Tested D G S TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 100 V VGSS 20 V o TC=25 C (Silicon Limited) Continuous Drain Current (1) o TC=25 C (Package Limited) 153 ID TC=100 C 97 Pulsed Drain Current IDM TC=25oC Power Dissipation 120 A o 480 223 PD o TC=100 C W 89 Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS 609 TJ, Tstg -55~150 Symbol Rating RJA 62.5 RJC 0.56 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jun. 2013. Version 1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDP1921- Single N-Channel Trench MOSFET 100V MDP1921 Part Number Temp. Range Package Packing RoHS Status MDP1921TH -55~150oC TO-220 Tube Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 2.9 4.0 V Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1.0 Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 RDS(ON) VGS = 10V, ID = 50A - 3.8 4.5 m gfs VDS = 10V, ID = 50A - 120 - S - 100 - - 27 - - 26 - - 6750 - Drain-Source ON Resistance Forward Transconductance A Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 50V, ID = 50A, VGS = 10V VDS = 40V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss - 50 - Output Capacitance Coss - 1300 - Turn-On Delay Time td(on) - 30.4 - - 28.8 - - 93.0 - - 34.2 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 50V, ID = 50A , RG = 3.0 tf nC pF ns Rg f=1 MHz - 2.5 - Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V Body Diode Reverse Recovery Time trr - 73 ns Body Diode Reverse Recovery Charge Qrr - 150 nC Gate Resistance Drain-Source Body Diode Characteristics IF = 50A, dl/dt = 100A/s Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited 2. EAS is tested at starting Tj = 25, L = 1.0mH, IAS = 28.0A, VGS = 10V. Jun. 2013. Version 1.2 2 MagnaChip Semiconductor Ltd. MDP1921- Single N-Channel Trench MOSFET 100V Ordering Information Drain-Source On-Resistance [m] 6.0V 180 7.0V ID, Drain Current [A] 160 8.0V 140 5.0V VGS = 10V 120 100 80 4.5V 60 40 4.0 3.9 VGS = 10V 3.8 3.7 3.6 4.0V 20 3.5 0 0 0 1 2 3 4 50 5 VDS, Drain-Source Voltage [V] 150 200 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 20 2.5 Notes : Notes : 18 RDS(ON) [m ], Drain-Source On-Resistance 1. VGS = 10 V 2. ID = 50 A RDS(ON), (Normalized) Drain-Source On-Resistance 100 ID, Drain Current [A] 2.0 1.5 1.0 0.5 ID = 50A 16 14 12 10 8 TA = 25 6 4 2 0.0 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 100 Notes : Notes : 90 100 IDR, Reverse Drain Current [A] VDS = 10V ID, Drain Current [A] 80 70 60 TA=25 50 40 30 20 VGS = 0V 10 TA=25 1 10 0 0 1 2 3 4 5 6 7 0.0 8 Fig.5 Transfer Characteristics Jun. 2013. Version 1.2 0.3 0.6 0.9 1.2 1.5 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP1921- Single N-Channel Trench MOSFET 100V 4.1 200 Note : ID = 50A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 50V Capacitance [pF] VGS, Gate-Source Voltage [V] Ciss 8000 8 6 4 6000 2000 2 Notes ; Coss 4000 1. VGS = 0 V 2. f = 1 MHz Crss 0 0 0 0 10 20 30 40 50 60 70 80 90 5 10 100 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 15 20 25 30 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 180 3 160 140 10 2 100 us 1 ms Operation in This Area is Limited by R DS(on) 1 ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1s DC 10 120 100 80 60 0 40 Single Pulse TJ=Max rated TC=25 20 10 -1 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 0 10 Z JA(t), Thermal Response D=0.5 0.2 -1 10 0.1 0.05 -2 0.02 10 0.01 -3 10 Notes : single pulse Duty Factor, D=t 1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC -4 10 -5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jun. 2013. Version 1.2 4 MagnaChip Semiconductor Ltd. MDP1921- Single N-Channel Trench MOSFET 100V 10000 10 MDP1921- Single N-Channel Trench MOSFET 100V Package Dimension 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Jun. 2013. Version 1.2 5 MagnaChip Semiconductor Ltd. MDP1921- Single N-Channel Trench MOSFET 100V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jun. 2013. Version 1.2 6 MagnaChip Semiconductor Ltd.