joo G4 DE R34b9674 00278549 4 i , . f . 3469674 FAIRCHILD SEMICONDUCTOR 84D 27859 D | IRF 130-1 33/IRF530-533 7 37-" ! FAIRCHILD MTP20N08/20N10 T 39/3 i A Schlumberger Company N-Channel Power MOSFETs, 20 A, 60-100 V Power And Discrete Division Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed 8S applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. UY @ Low Rpsvon) iS) @ Ves Rated at +20 V Isoc02aF Iso00 108 @ Silicon Gate for Fast Switching Speeds Iss, Vosion), Specified at Elevated Temperature heist Woes Rugged Low Drive Requirements tee iaa Iieegs Ease of Paralleling MTP20N08 . MTP20N10 Product Summary Ip at Ip at Part Number Vpss Rpsion Te = 26C To = 100C Case Style (on) IRF130 100 V 0.18 2 14 A 90A TO-204AA . (RF131 60 V 0.18 2 14 A BOA i IRF 132 100 V 0.25 2 12 A B.0A : IRF133 60 V 0.25 2 12 A 8.0 A | IRF530 100 V 0.18 2 14 A 90A TO-220AB | IRF531 60 V 0.18 2 144A 90A } . IRF532 100 V 0.25 Q 12 8.0 A i . IRF533 60 V 0.25 2 12 A 8.0 A | MTP20N08 80 V 0.15 Q 20 A 15 A MTP20Ni0 100 V 0.15 2 20 A 115A Notes For information concerning connection diagram and package outline, refer to Section 7. 2-72- 3469674 FAIRCHILD ay pe fsyede74 ooe7aso 5 &f SEMICONDUCTOR 84D 27860 D IRF 130-133/!IRF530-533 MTP20N08/20N10 7-39-11 TT 1: 39-3 Maximum Ratings Rating IRF 130/132 Rating IRF530/532 Rating IRF131/133 Symbol Characteristic MTP20N10 MTP20N08 IRF531/533 Unit Voss Drain to Source Voltage! 100 80 60 Vv Vor Drain to Gate Voltage! 100 80 60 Vv Res = 20 kQ Vas Gate to Source Voltage +20 +20 +20 Vv TJ, Tstg | Operating Junction and -55 to +150 -55 to +150 -55 to +150 C Storage Temperatures Th Maximum Lead Temperature 275 275 275 C for Soldering Purposes, } 1/8" From Case for 5 s = i Maximum Therma! Characteristics IRF 130-133 IRF530-533 MTP20N08/10 Rac Thermal Resistance, 1.67 1.26 C/W Junction to Case Pp Total Power Dissipation 75 100 WwW at To = 25C lom Pulsed Drain Current? 60 60 A Electrical Characteristics (Tc = 25C unless otherwise noted) Symbol Characteristic | Min | Max | Unit Test Conditions Off Characteristics Viaryoss | Drain Source Breakdown Voltage Vv Ves =0 V, Ip = 250 yA 1RF130/132/530/532/ 100 MTP20N10 MTP20N08 80 IRF131/133/531 /533 60 lpss Zero Gate Voltage Drain Current 250 BA Vps = Rated Voss, Vas = 0 V 1000 BA Vos = 0.8 x Rated Voss, Veg = 0 V, Tg = 125C less Gate-Body Leakage Current nA Veg = +20 V, Vps=0 V IRF130-133 100 IRF530-533/ +500 MTP20N08/MTP20N10 2-73a <== ee . 3469674 FAIRCHILD SEMICONDUCTOR 84 DEM 3469474 oo278b1 7 Lr IRF 130-133/IRF530-533 ! MTP20N08/20N10 739 1, i T- 39-13 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) j Symbol Characteristic | Min | Max | Unit | Test Conditions : ; On Characteristics . Veasah) Gate Threshold Voltage Vv IRF130/133/530/533 2.0 4.0 Ip = 250 pA, Vos = Ves MTP20N08/20N10 2.0 4.5 Ip =1 mA, Vos = Ves Rosion) | Static Drain-Source On-Resistance Qa Vag =10 V, Ip=8.0 A WAF130/131/530/531 0.18 IRF132/133/532/533 0.25 : MTP20N08/20N10 0.15 iIp=10A Z Vpsien) | Drain-Source On-Voltage? 1.5 Vv Veg =10 V; Ip=10 A : MTP 20N08/20N10 3.6 v Vas = 10 V; Ip =20 A 3.0 Vv Vas = 10 Vilp=10 A Te = 100C fs Forward Transconductance 4.0 $ &) Vps = 10 V, Ilp=8.0 A ; Dynamic Characteristics i Ciss Input Capacitance 800 pF Vps = 25 V, Veg =0 V Coss Output Capacitance 500 pF f= 1.0 MHz { Criss Reverse Transfer Capacitance 160 pF | Switching Characteristics (To = 25C, Figures 1, 2) tdton) Turn-On Delay Time 30 ns Vo = 86 v. lp = 8.0 A 3 | ty Rise Time 75 ns Roe = BON tarot) Turn-Off Delay Time 40 ns tt Fall Time 45 ns taon) Turn-On Delay Time 50 ns Vop = 25 V, Ip=10 A t Rise Time 450 ns Ros = to 6 Raen = 50 2 tot Turn-Off Delay Time 100 ns : tf Fall Time 200 ns : Qg Total Gate Charge 30 nc Veg=10 V, IDp=i8 A Vpp = 80 V 1 ah em 2-74 wo ee 'ame | FAIRCHILD SEMICONDUCTOR 84 pe Bf sun9674 onezana 4 i . IRF130-133/IRF530-533 MTP20N08/20N10 ! T-39-11 : 7 sy oO | . 39 -| 3 : i 1 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) | | Symbol Characteristic Typ Max | Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF130/131/530/531 1.5 2.5 Vv Igs= 14 A; Vag =0 V 1RF132/133/532/533 1.5 2.3 Vv Is=12 A; Veg=O0 V . ter Reverse Recovery Time 300 ns Ig = 4 A; dig/dt = 25 A/pS Notes } 1. Ty = +25C to +150C 2. Pulse width limited by Ty. 3. Switching time measurements performed on LEM TR-58 test equipment. i Typical Electrical Characteristics : Figure 1 Switching Test Circuit Figure 2. Switching Waveforms OUTPUT, Vout INVERTED INPUT, Vin 10% ~ PULSE WIDTH Typical Performance Curves | Figure 4 Static Drain to Source Resistance : : Figure 3 Output Characteristics vs Drain Current : : 1 Ye =10V = 10V . 12 w 0.9 . ez ; > : fw 8 : 5 24 Ty = 100C z = 6 Zw 02 z c 33 * 2 z g oa ax . Zz 6 ob : z ai Ty = 25C - a a= : bo ft ot De Lae * 2 oO 0 0 0.5 1.0 1.5 2.0 0 4 a 12 16 20 VYosDRAIN SOURCE VOLTAGEV lp DRAIN CURRENTA PCOSg60F PCoss70F 2-75 ee |1 om mmr FAIRCHILD SEMICONDUCTOR | aereepgmtern - ay pe ayese74 oo IRF130-133/IRF530-533 MTP20N08/20N10 T-39~11 TT 39-13 Typical Performance Curves (Cont.) Figure 5 Transfer Characteristics 8 Vos = 10 V 8 " T & z w = 10 2 o z 6 z S 6 | o4 Ty = 25C 2 Ty = ~55C a 2 4 6 a Vas~GATE TO SOURCE VOLTAGEV POOSSEOF Figure 7 Capacitance vs Drain to Source Voltage 2 103 x CCAPACITANCEpF ~ = 10 10t 10 5 197 S10? VosDRAIN TO SOURCE VOLTAGEV PCORRIOF Figure 9 Forward Biased Safe Operating Area for IRF130-133 and !RF530-533 102 5 2 fot 5 AREA MAY BE LIMITED BY Rpsjon) IpDRAIN CURRENTA Tc = Ty< 150C 2 SINGLE PULSE oem CURRENT LIMITED 1071 1 2 5 10% 2 5 102 VosDRAIN TO SOURCE VOLTAGEV PCT 1560 Figure 6 Temperature Variation of Gate to Source Threshold Voltage oa NORMALIZED GATE THRESHOLD VOLTAGE o -50 Q 50 160 160 Tj