VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Options Device VN2460 TO-92 TO-243AA (SOT-89) VN2460N3-G VN2460N8-G -G indicates package is RoHS compliant (`Green') RDS(ON) ID(ON) (V) (max) () (min) (mA) 600 20 250 BVDSS/BVDGS Pin Configurations DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature Soldering temperature* -55C to +150C +300C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. DRAIN GATE GATE SOURCE DRAIN TO-243AA (SOT-89) (N8) TO-92 (N3) Product Marking SiVN 2 4 6 0 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-92 (N3) VN4FW W = Code for week sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VN2460 Thermal Characteristics ID ID Power Dissipation jc ja IDR IDRM Package (continuous)* (mA) (pulsed) (mA) @TA = 25OC (W) ( C/W) ( C/W) (mA) (mA) TO-92 160 500 0.74 125 170 160 500 600 200 600 200 TO-243AA 1.6 O O 15 78 Max Units Notes: ID (continuous) is limited by max rated TJ, Mounted on FR5 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T = 25C unless otherwise specified) A Sym Parameter Min Typ BVDSS Drain-to-source breakdown voltage 600 - - V VGS = 0V, ID = 2.0mA VGS(th) Gate threshold voltage 1.5 - 4.0 V VGS = VDS, ID = 2.0mA Change in VGS(th) with temperature - - -5.5 mV/OC VGS = VDS, ID = 2.0mA Gate body leakage current - - 100 nA VGS = 20V, VDS = 0V - - 10 A VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC 0.25 - - A VGS = 10V, VDS = 25V - - 25 - - 20 - - 1.7 %/ C VGS = 10V, ID = 100mA 50 - - mmho VDS = 25V, ID = 100mA VGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature GFS Forward transconductance CISS Input capacitance - - 150 COSS Common source output capacitance - - 50 CRSS Reverse transfer capacitance - - 25 td(ON) Turn-on delay time - - 10 Rise time - - 10 Turn-off delay time - - 25 Fall time - - 20 Diode forward voltage drop - - 1.5 tr td(OFF) tf VSD O Conditions VGS = 4.5V, ID = 100mA VGS = 10V, ID = 100mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 250mA, RGEN = 25 V VGS = 0V, ISD = 400mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD VDD t(OFF) tr 10% td(OFF) RL tF D.U.T. 10% INPUT OUTPUT 0V 90% OUTPUT RGEN 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 VN2460 Typical Performance Curves Output Characteristics Saturation Characteristics 1.2 0.5 VGS = 10V VGS = 10V 8V 0.8 6V 0.6 0.4 6V 5V 0.3 0.2 5V 4V 0.1 0.2 0 4V 0 10 20 30 40 3V 50 0 3V 0 2 VDS (Volts) PD (Watts) GFS (siemens) TA = -55OC 0.3 TA = 25OC 0.2 1.2 TO-92 0.8 TA = 125OC 0.1 0.1 0.2 0.3 0.4 0.4 0 0.5 0 50 25 100 1.0 Thermal Resistance (normalized) TO-92 (pulsed) TO-92 (DC) SOT-89 (DC) 0.01 T C = 25 OC SOT-89 P D = 1.6W T C = 25 OC 0.8 0.6 0.4 0.2 TO-92 P D = 1W T C = 25 OC 0 100 VDS (Volts) 150 Thermal Response Characteristics SOT-89 (pulsed) 10 125 O Maximum Rated Safe Operating Area ID (amperes) 75 TA ( C) ID (Amperes) 1 10 SOT-89 1.6 0.1 8 Power Dissipation vs. Temperature 0.4 1.0 6 2.0 VDS = 25V 0.0 0.0 4 VDS (Volts) Transconductance vs. Drain Current 0.5 0.001 8V 0.4 ID (Amperes) ID (Amperes) 1.0 1000 0.001 0.01 0.1 1.0 10 tp (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 VN2460 Typical Performance Curves (cont.) On Resistance vs. Drain Current BVDSS Variation with Temperature 50 1.2 1.1 RDS(ON) (ohms) 1.0 0.9 0.8 30 VGS = 10V 20 10 -50 0 50 100 0 150 0 0.2 0.4 TA = 25C 0.3 TA = 125C 0.2 0.1 0 1.6 3.0 1.4 2.5 1.2 2 4 6 8 1.0 1.5 0.8 1.0 -25 0 VGS (Volts) 25 50 100 125 0.0 150 Gate Drive Dynamic Characteristics 10 300 ID = 0.5A f = 1MHz 8 VDS=10V 150 VGS (volts) 225 C (picofarads) 75 Tj (C) Capacitance vs. Drain Source Voltage CISS 75 CRSS 0 4 0 10 VDS=40V 6 2 COSS 0 0.5 RDS(on) @ 10V, 0.1A 0.4 -50 10 2.0 VGS(th) @ 2mA 0.6 0 1.0 TA = -55C VGS(th) (normalized) ID (Amperes) 0.4 0.8 VGS(TH) and RDS(ON) w/ Temperature Transfer Characteristics 0.5 VDS = 25V 0.6 ID (Amperes) Tj (C) 20 30 VDS (volts) 40 0 1.0 2.0 3.0 4.0 5.0 QG (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) BVDSS (Normalized) VGS = 4.5V 40 VN2460 3-Lead TO-92 Package Outline (N3) D A 1 Seating Plane 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014 .014 .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022 .022 .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 5 VN2460 3-Lead TO-243AA (SOT-89) Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version D070908. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. (c)2008 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN2460 A011409 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 6