● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
VN2460
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
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N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Device
Package Options BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
ID(ON)
(min)
(mA)
TO-92 TO-243AA
(SOT-89)
VN2460 VN2460N3-G VN2460N8-G 600 20 250
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55°C to +150°C
Soldering temperature*+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
TO-92 (N3) TO-243AA (SOT-89) (N8)
GATE
SOURCE
DRAIN
GATE
SOURCE
DRAIN
DRAIN
Product Marking
VN4FW W = Code for week sealed
= “Green” Packaging
TO-92 (N3)
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVN
2460
YYWW
TO-243AA (SOT-89) (N8)
Pin Configurations
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with
the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or
2
VN2460
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Thermal Characteristics
Package
ID
(continuous)*
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TA = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
†
(mA)
IDRM
(mA)
TO-92 160 500 0.74 125 170 160 500
TO-243AA 200 600 1.6‡15 78‡200 600
Notes:
† ID (continuous) is limited by max rated TJ,
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage 600 - - V VGS = 0V, ID = 2.0mA
VGS(th) Gate threshold voltage 1.5 - 4.0 V VGS = VDS, ID = 2.0mA
ΔVGS(th) Change in VGS(th) with temperature - - -5.5 mV/OC VGS = VDS, ID = 2.0mA
IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 10 µA VGS = 0V,
VDS = Max Rating
- - 1.0 mA VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON) On-state drain current 0.25 - - A VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance - - 25 ΩVGS = 4.5V, ID = 100mA
- - 20 VGS = 10V, ID = 100mA
ΔRDS(ON) Change in RDS(ON) with temperature - - 1.7 %/OC VGS = 10V, ID = 100mA
GFS Forward transconductance 50 - - mmho VDS = 25V, ID = 100mA
CISS Input capacitance - - 150
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
COSS Common source output capacitance - - 50
CRSS Reverse transfer capacitance - - 25
td(ON) Turn-on delay time - - 10
ns
VDD = 25V,
ID = 250mA,
RGEN = 25Ω
trRise time - - 10
td(OFF) Turn-off delay time - - 25
tfFall time - - 20
VSD Diode forward voltage drop - - 1.5 V VGS = 0V, ISD = 400mA
Notes:
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
10V
V
DD
RGEN
0V
0V
3
VN2460
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves
VGS = 10V
0 10 20 30 40 50
0
0.2
0.4
0.6
0.8
1.0
1.2
ID)serepm
A(
VDS (Volts)
Output Characteristics
8V
6V
5V
4V
3V
0 2 4 6 8 10
0
0.1
0.2
0.3
0.4
0.5
Saturation Characteristics
ID)serepmA(
VDS (Volts)
VGS = 10V
8V
6V
5V
4V
3V
0.0 0.1 0.2 0.3 0.4 0.5
0.0
0.1
0.2
0.3
0.4
0.5
TA = -55
O
C
TA = 25
O
C
TA = 125
O
C
VDS = 25V
Transconductance vs. Drain Current
GSF )sne
m
e
i
s
(
ID(Amperes)
Power Dissipation vs. Temperature
PD)sttaW(
TA(
O
C)
0 50 75 100 125 150
0
0.4
0.8
1.2
1.6
2.0
25
TO-92
SOT-89
ID)se
r
ep
m
a
(
VDS (Volts)
Maximum Rated Safe Operating Area
TO-92 (DC)
SOT-89 (DC)
SOT-89 (pulsed)
TO-92 (pulsed)
TC = 25
O
C
0.01
0.1
1.0
0.001
1 100010010
Thermal Response Characteristics
)
d
ezilamro
n(
ecn
a
tsiseR l
amr
ehT
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1.0
SOT-89
P
D
= 1.6W
T
C
= 25O
C
0
tp (seconds)
TO-92
P
D
= 1W
T
C
= 25OC
4
VN2460
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves (cont.)
0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
VGS = 4.5V
VGS = 10V
R)NO(S
D)s
m
ho(
ID(Amperes)
On Resistance vs. Drain Current
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS(th) @ 2mA
RDS(on)@ 10V, 0.1A
VGS(TH) and RDS(ON) w/ Temperature
V)ht(SG )dez
i
la
m
r
o
n
(
Tj(°C)
R)NO(SD )dezilamron(
Transfer Characteristics
ID)s
e
r
e
p
m
A(
VGS (Volts)
0 2 4 6 8 10
0
0.1
0.2
0.3
0.4
0.5
VDS = 25V TA = -55°C
TA = 125°C
TA = 25°C
VB SSD )
d
ezilam
r
oN(
Tj(°C)
BV
DSS
Variation with Temperature
-50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
Capacitance vs. Drain Source Voltage
C)
sdarafo
c
i
p
(
VDS (volts)
0 10 20 30 40
0
75
150
225
300
f = 1MHz
CISS
COSS
CRSS
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
SG
)
stlov
(
0 1.0 2.0 3.0 4.0 5.0
0
2
4
6
8
10
VDS=10V
VDS=40V
ID= 0.5A
5
VN2460
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014†.014†.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version D080408.
Seating Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.
©2008 All rights reserved. Unauthorized use or reproduction is prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
6
VN2460
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VN2460
A011409
3-Lead TO-243AA (SOT-89) Package Outline (N8)
Symbol A b b1 C D D1 E E1 e e1 H L
Dimensions
(mm)
MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13
1.50
BSC
3.00
BSC
3.94 0.89
NOM - - - - - - - - - -
MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version D070908.
bb1
